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1. 发明授权

US06858078B2 Apparatus and method for diamond production 有权
公开(公告)号：US06858078B2
公开(公告)日：2005-02-22
申请号：US10288499
申请日：2002-11-06
申请人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C30B29/04 , C01B31/06 , C23C16/27 , C30B25/10 , C30B25/16 , C30B25/02 , C30B25/12
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

2. 发明授权

US5628824A High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition 失效
标题翻译：通过微波等离子体辅助化学气相沉积在高温下高生长速率同质外延金刚石膜沉积
公开(公告)号：US5628824A
公开(公告)日：1997-05-13
申请号：US406196
申请日：1995-03-16
申请人： Yogesh K. Vohra , Thomas S. McCauley
发明人： Yogesh K. Vohra , Thomas S. McCauley
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C23C16/274 , C30B25/105
摘要： The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.
摘要翻译：公开了用于微波等离子体化学气相沉积的高线性生长速率和衬底温度的高质量金刚石膜的沉积。与MPCVD工艺通常报道的低于5微米/小时的速率相比，该方法实现的线性生长速率通常大于50微米/小时。

3. 发明申请

US20090038934A1 APPARATUS AND METHOD FOR DIAMOND PRODUCTION 审中-公开
标题翻译：钻石生产的装置和方法
公开(公告)号：US20090038934A1
公开(公告)日：2009-02-12
申请号：US12253287
申请日：2008-10-17
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C01B31/06
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
摘要翻译：一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置，测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度测量，基于温度测量控制生长表面的温度杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

4. 发明申请

US20100209665A1 ULTRA SMOOTH NANOSTRUCTURED DIAMOND FILMS AND COMPOSITIONS AND METHODS FOR PRODUCING SAME 审中-公开
标题翻译：超微型纳米结构金刚石薄膜及其制造方法
公开(公告)号：US20100209665A1
公开(公告)日：2010-08-19
申请号：US12088072
申请日：2006-09-29
申请人： Valeriy V. Konovalov , Yogesh K. Vohra , Shane A. Catledge
发明人： Valeriy V. Konovalov , Yogesh K. Vohra , Shane A. Catledge
IPC分类号： B32B3/26 , H05H1/24 , C09D5/00 , C09D1/00
CPC分类号： C23C16/277 , B82Y30/00 , B82Y40/00 , C23C16/274 , C23C16/279 , Y02E60/364 , Y10T428/24355
摘要： Disclosed are compositions and methods for producing carbon-based films, for example, ultra smooth diamond nanostructured diamond films. Generally, the disclosed compositions can comprise a noble gas component, hydrogen, a carbon precursor, and nitrogen. Generally, the disclosed methods can comprise the steps of providing a mixture comprising a noble gas, hydrogen, a carbon precursor, and nitrogen, establishing a plasma comprising the mixture; and depositing carbon-containing species from the plasma onto the surface, thereby producing a film on the surface. Generally, the disclosed films exhibit superior average gain size, RMS surface roughness, hardness, relative diamond crystallinity, and surface adhesion. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
摘要翻译：公开了用于生产碳基膜的组合物和方法，例如超平滑金刚石纳米结构金刚石膜。通常，所公开的组合物可以包含惰性气体组分，氢气，碳前体和氮气。通常，所公开的方法可以包括提供包含惰性气体，氢气，碳前体和氮气的混合物的步骤，建立包含该混合物的等离子体; 并将来自等离子体的含碳物质沉积到表面上，从而在表面上产生膜。通常，所公开的膜显示出优异的平均增益尺寸，RMS表面粗糙度，硬度，相对金刚石结晶度和表面粘附性。该摘要旨在作为用于在特定技术中进行搜索的扫描工具，而不意在限制本发明。

5. 发明申请

US20090297429A1 HIGH GROWTH RATE METHODS OF PRODUCING HIGH-QUALITY DIAMONDS 审中-公开
标题翻译：生产高质量钻石的高增长率方法
公开(公告)号：US20090297429A1
公开(公告)日：2009-12-03
申请号：US12160083
申请日：2006-12-15
申请人： Yogesh K. Vohra , Paul A. Baker
发明人： Yogesh K. Vohra , Paul A. Baker
IPC分类号： C01B31/06 , H05H1/24 , C09D1/00 , B05C11/00 , H05H1/46
CPC分类号： C30B29/04 , C01B32/25 , C30B25/105
摘要： In one aspect, the invention relates to a method of producing high-quality diamond comprising the steps of providing a mixture comprising hydrogen, a carbon precursor, and oxygen; exposing the mixture to energy at a power sufficient to establish a plasma from the mixture; containing the plasma at a pressure sufficient to maintain the plasma; and depositing carbon-containing species from the plasma to produce diamond at a growth rate of at least about 10 μm/hr; wherein the diamond comprises less than about 10 ppm nitrogen. The invention also relates to the apparatus, gas compositions, and plasma compositions used in connection with the methods of the invention as well as the products produced by the methods of the invention. This abstract is intended as a safety scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
摘要翻译：一方面，本发明涉及生产高品质金刚石的方法，其包括以下步骤：提供包含氢，碳前体和氧的混合物; 以足以从混合物建立等离子体的功率将混合物暴露于能量; 在足以维持等离子体的压力下容纳等离子体; 以及从所述等离子体沉积含碳物质以至少约10mum / hr的生长速率生产金刚石; 其中所述金刚石包含小于约10ppm的氮。本发明还涉及与本发明的方法结合使用的装置，气体组合物和等离子体组合物以及通过本发明的方法生产的产品。该摘要旨在作为用于在特定技术中进行搜索的安全扫描工具，而不意在限制本发明。

6. 发明授权

US07452420B2 Apparatus and method for diamond production 有权
标题翻译：钻石生产的装置和方法
公开(公告)号：US07452420B2
公开(公告)日：2008-11-18
申请号：US11785996
申请日：2007-04-23
申请人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C30B25/12
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
摘要翻译：一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置，测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度测量，基于温度测量控制生长表面的温度杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

7. 发明授权

US07235130B2 Apparatus and method for diamond production 有权
公开(公告)号：US07235130B2
公开(公告)日：2007-06-26
申请号：US11043062
申请日：2005-01-27
申请人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C30B24/14 , C30B25/14
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

8. 发明授权

US06183818B2 Process for ultra smooth diamond coating on metals and uses thereof 有权
标题翻译：用于金属上的超光滑金刚石涂层的方法及其用途
公开(公告)号：US06183818B2
公开(公告)日：2001-02-06
申请号：US09409502
申请日：1999-09-30
申请人： Yogesh K. Vohra , Shane A. Catledge
发明人： Yogesh K. Vohra , Shane A. Catledge
IPC分类号： C23C1626
CPC分类号： C23C16/274 , C23C16/277
摘要： The present invention provides a new process to deposit well adhered ultra smooth diamond films on metals by adding nitrogen gas to the methane/hydrogen plasma created by a microwave discharge. Such diamond coating process is useful in tribological/wear resistant applications in bio-implants, machine tools, and magnetic recording industry.
摘要翻译：本发明提供了一种通过向通过微波放电产生的甲烷/氢等离子体中加入氮气来在金属上沉积良好粘附的超平滑金刚石膜的新方法。这种金刚石涂层方法可用于生物植入物，机床和磁记录工业中的摩擦/耐磨应用。

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