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1. 发明授权

US08669661B2 Metal line and via formation using hard masks 有权
标题翻译：金属线和通孔形成使用硬掩模
公开(公告)号：US08669661B2
公开(公告)日：2014-03-11
申请号：US13370919
申请日：2012-02-10
申请人： Chih-Hsiang Yao , Ying-Wen Huang
发明人： Chih-Hsiang Yao , Ying-Wen Huang
IPC分类号： H01L23/12 , H01L21/4763
CPC分类号： H01L23/522 , H01L21/02063 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76816 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A device includes a dielectric layer, a metal line in the dielectric layer, and a via underlying and connected to the metal line. Two dummy metal patterns are adjacent to the metal line, and are aligned to a straight line. A dummy metal line interconnects the two dummy metal patterns. A width of the dummy metal line is smaller than lengths and widths of the two dummy metal patterns, wherein the width is measure in a direction perpendicular to the straight line. Bottoms of the two dummy metal patterns and the dummy metal line are substantially level with a bottom surface of the metal line.
摘要翻译：一种器件包括电介质层，电介质层中的金属线以及下面并连接到金属线的通孔。两个虚拟金属图案与金属线相邻，并且与直线对准。虚拟金属线将两个虚拟金属图案互连。虚拟金属线的宽度小于两个虚拟金属图案的长度和宽度，其中宽度在垂直于直线的方向上测量。两个虚拟金属图案和虚拟金属线的底部基本上与金属线的底面平齐。

2. 发明申请

US20130176214A1 TOUCH CONTROL METHOD 审中-公开
标题翻译：触控控制方法
公开(公告)号：US20130176214A1
公开(公告)日：2013-07-11
申请号：US13429456
申请日：2012-03-26
申请人： Kuang-Cheng Chao , Ying-Wen Huang
发明人： Kuang-Cheng Chao , Ying-Wen Huang
IPC分类号： G06F3/033 , G09G5/08
CPC分类号： G06F3/0488 , G06F3/0416
摘要： A touch control method is disclosed. The steps of the touch control method include: detecting a first and a second finger print areas generated according to a touching action by a user on the touch panel; calculating a first angle between the first finger print area and a first reference axis and a second angle between the second finger print area and a second reference axis respectively; judging whether each of the first and the second finger print areas corresponding to the touching action is performed by a first hand or a second hand of the user according to the first and the second angles; and controlling a movement of a cursor under an absolute coordinate according to the touching action of the user's first hand, and controlling a movement of the cursor under a relative coordinate according to the touching action of the user's second hand.
摘要翻译：公开了一种触摸控制方法。触摸控制方法的步骤包括：根据用户在触摸面板上的触摸动作来检测产生的第一和第二指纹区域; 分别计算第一指纹区域和第一参考轴线之间的第一角度和第二指纹区域与第二参考轴线之间的第二角度; 根据所述第一和第二角度，判断与所述触摸动作相对应的所述第一和第二指纹区域是否由用户的第一只手或第二只手执行; 以及根据用户的第一只手的触摸动作来控制光标在绝对坐标下的移动，并且根据用户的秒针的触摸动作来控制光标在相对坐标下的移动。

3. 发明申请

US20120276558A1 KITS FOR MULTIPARAMETRIC PHOSPHO ANALYSIS 审中-公开
标题翻译：多功能磷光体分析仪
公开(公告)号：US20120276558A1
公开(公告)日：2012-11-01
申请号：US13544053
申请日：2012-07-09
申请人： David Soper , David Rosen , Todd Covey , Ying-Wen Huang , Wenday Fantl , Ralph Lin
发明人： David Soper , David Rosen , Todd Covey , Ying-Wen Huang , Wenday Fantl , Ralph Lin
IPC分类号： G01N33/53
CPC分类号： G01N33/6842 , G01N33/5011 , G01N33/5041 , G01N33/5094 , G01N33/6845 , G01N33/80 , G01N2440/14 , G01N2510/00
摘要： As disclosed herein, the present invention provides for kits and a composition for diagnosis, prognosis, drug discovery, drug development, and patient stratification. The kits can comprise a plurality of binding elements for cell surface markers, and a plurality of binding elements for state-specific intracellular markers. The kits can further comprise a plurality of modulators directed for the particular cell function or signaling pathways. The kits can further include fixatives, permeabilizing agent, buffers, containers, instructions, and software for data analysis/compilation.
摘要翻译：如本文所公开的，本发明提供用于诊断，预后，药物发现，药物开发和患者分层的试剂盒和组合物。试剂盒可以包含用于细胞表面标记的多个结合元件，以及用于状态特异性细胞内标记物的多个结合元件。试剂盒还可以包含针对特定细胞功能或信号传导途径的多个调节剂。试剂盒还可以包括固定剂，渗透剂，缓冲液，容器，说明书和用于数据分析/汇编的软件。

4. 发明授权

US07470551B2 Spin transistor and manufacturing method thereof 失效
标题翻译：自旋晶体管及其制造方法
公开(公告)号：US07470551B2
公开(公告)日：2008-12-30
申请号：US11409212
申请日：2006-04-24
申请人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Der-Ray Huang , Yeong-Der Yao , Jau-Jiu Ju
发明人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Der-Ray Huang , Yeong-Der Yao , Jau-Jiu Ju
IPC分类号： H01L21/00
CPC分类号： H01L29/66984 , H01L29/6625
摘要： A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.
摘要翻译：提供自旋晶体管及其制造方法。该方法包括通过光刻在衬底上限定所需区域; 通过离子注入形成掺杂区域，并在衬底上形成磁阻膜。最后，该方法在同一平面中产生具有发射极，基极和集电极的自旋晶体管。制造方法将发射极，基极和集电极集成到一个平面中，从而实现了自旋晶体管的小型化，并且有利于集成和随后的自旋晶体管和集成电路元件的封装。

5. 发明申请

US20130207273A1 Metal Line and Via Formation Using Hard Masks 有权
标题翻译：金属线和使用硬掩模的通孔形成
公开(公告)号：US20130207273A1
公开(公告)日：2013-08-15
申请号：US13370919
申请日：2012-02-10
申请人： Chih-Hsiang Yao , Ying-Wen Huang
发明人： Chih-Hsiang Yao , Ying-Wen Huang
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/522 , H01L21/02063 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76816 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A device includes a dielectric layer, a metal line in the dielectric layer, and a via underlying and connected to the metal line. Two dummy metal patterns are adjacent to the metal line, and are aligned to a straight line. A dummy metal line interconnects the two dummy metal patterns. A width of the dummy metal line is smaller than lengths and widths of the two dummy metal patterns, wherein the width is measure in a direction perpendicular to the straight line. Bottoms of the two dummy metal patterns and the dummy metal line are substantially level with a bottom surface of the metal line.
摘要翻译：一种器件包括电介质层，电介质层中的金属线以及下面并连接到金属线的通孔。两个虚拟金属图案与金属线相邻，并且与直线对准。虚拟金属线将两个虚拟金属图案互连。虚拟金属线的宽度小于两个虚拟金属图案的长度和宽度，其中宽度在垂直于直线的方向上测量。两个虚拟金属图案和虚拟金属线的底部基本上与金属线的底面平齐。

6. 发明申请

US20070166841A1 Spin transistor and manufacturing method thereof 失效
标题翻译：自旋晶体管及其制造方法
公开(公告)号：US20070166841A1
公开(公告)日：2007-07-19
申请号：US11409212
申请日：2006-04-24
申请人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Der-Ray Huang , Yeong-Der Yao , Jau-Jiu Ju
发明人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Der-Ray Huang , Yeong-Der Yao , Jau-Jiu Ju
IPC分类号： H01L21/00
CPC分类号： H01L29/66984 , H01L29/6625
摘要： A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.
摘要翻译：提供自旋晶体管及其制造方法。该方法包括通过光刻在衬底上限定所需区域; 通过离子注入形成掺杂区域，并在衬底上形成磁阻膜。最后，该方法在同一平面中产生具有发射极，基极和集电极的自旋晶体管。制造方法将发射极，基极和集电极集成到一个平面中，从而实现了自旋晶体管的小型化，并且有利于集成和随后的自旋晶体管和集成电路元件的封装。

7. 发明申请

US20060054930A1 Spin transistor and method thereof 有权
标题翻译：自旋晶体管及其方法
公开(公告)号：US20060054930A1
公开(公告)日：2006-03-16
申请号：US10942113
申请日：2004-09-16
申请人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Yeong-Der Yao , Der-Ray Huang , Jau-Jiu Ju
发明人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Yeong-Der Yao , Der-Ray Huang , Jau-Jiu Ju
IPC分类号： H01L31/109
CPC分类号： H01L29/66984 , B82Y10/00 , H01L43/08
摘要： A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.
摘要翻译：自旋晶体管使用单个势垒结构来增加电流波动率。自旋晶体管可以包括发射极，集电极，基极和基极电阻中的至少一个。发射极可以是磁阻装置，其可以基于磁场提供可调电阻。收集器可以是可以提供单个势垒的无源器件。基极可以放置在发射极和集电极之间，并且可以将发射极与集电极耦合。基极电阻可以连接到基极以提供偏置。

8. 发明申请

US20100215644A1 ANALYSIS OF NODES IN CELLULAR PATHWAYS 审中-公开
标题翻译：细胞途径中的NODES分析
公开(公告)号：US20100215644A1
公开(公告)日：2010-08-26
申请号：US12713165
申请日：2010-02-25
申请人： Wendy J. Fantl , Ying-Wen Huang
发明人： Wendy J. Fantl , Ying-Wen Huang
IPC分类号： A61K39/395 , C12Q1/68 , G01N33/53 , C12Q1/48 , C12Q1/37 , C12Q1/02 , A61K38/16 , A61K31/7088
CPC分类号： G01N33/5041 , A61K31/706 , A61K31/7068 , A61K31/7088 , C12Q1/6886 , G01N33/5008
摘要： An embodiment of the present invention is a method for measuring activity of cell pathways, such as the cell cycle pathway and correlating the resulting profile to phenotypes. The resulting correlations are useful in diagnosis, prognosis, selection and development of drug treatment regimens, and drug screening applications.
摘要翻译：本发明的一个实施方案是用于测量细胞途径的活性的方法，例如细胞周期途径并将得到的分布与表型相关联。所得的相关性在药物治疗方案的诊断，预后，选择和发展以及药物筛选应用中是有用的。

9. 发明授权

US07531883B2 Magneto-resistance transistor and method thereof 失效
标题翻译：磁阻晶体管及其方法
公开(公告)号：US07531883B2
公开(公告)日：2009-05-12
申请号：US11600816
申请日：2006-11-17
申请人： Ying-Wen Huang , Chi-Kuen Lo , Yeong-Der Yao , Lan-Chin Hsieh , Jau-Jiu Ju , Der-Ray Huang
发明人： Ying-Wen Huang , Chi-Kuen Lo , Yeong-Der Yao , Lan-Chin Hsieh , Jau-Jiu Ju , Der-Ray Huang
IPC分类号： H01L29/78
CPC分类号： H01L43/08 , H01L29/82
摘要： A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.
摘要翻译：一种包括可用作发射极的磁阻元件和可用作集电极的无源元件的磁阻晶体管。可以将基座置于无源元件和磁阻元件之间，从而将无源元件与磁阻元件相结合。给定强度的磁场可以施加到磁阻晶体管的至少一部分，给定的强度决定了磁阻晶体管的至少一部分中的电阻。因此，通过调整给定的磁场强度，可以调整电阻。因此，可以用固定电压来实现不同的发射极电流输入。此外，基极电流可以随发射极电流输入的受控变化而变化。

10. 发明授权

US07235851B2 Spin transistor and method thereof 有权
标题翻译：自旋晶体管及其方法
公开(公告)号：US07235851B2
公开(公告)日：2007-06-26
申请号：US10942113
申请日：2004-09-16
申请人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Yeong-Der Yao , Der-Ray Huang , Jau-Jiu Ju
发明人： Ying-Wen Huang , Chi-Kuen Lo , Lan-Chin Hsieh , Yeong-Der Yao , Der-Ray Huang , Jau-Jiu Ju
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L29/66984 , B82Y10/00 , H01L43/08
摘要： A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.
摘要翻译：自旋晶体管使用单势垒结构来增加电流波动率。自旋晶体管可以包括发射极，集电极，基极和基极电阻中的至少一个。发射极可以是磁阻装置，其可以基于磁场提供可调电阻。收集器可以是可以提供单个势垒的无源器件。基极可以放置在发射极和集电极之间，并且可以将发射极与集电极耦合。基极电阻可以连接到基极以提供偏置。

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