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1. 发明授权

US08551859B2 Biosensors integrated with a microfluidic structure 有权
标题翻译：与微流体结构集成的生物传感器
公开(公告)号：US08551859B2
公开(公告)日：2013-10-08
申请号：US13293795
申请日：2011-11-10
申请人： Kristin M. Ackerson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Yen L. Lim
发明人： Kristin M. Ackerson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Yen L. Lim
IPC分类号： H01L21/76 , H01L21/70
CPC分类号： G01N27/4145 , H01L29/772
摘要： A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.
摘要翻译：提供了由电极包围的微流体结构的生物传感器和围绕生物传感器的微流体结构形成电极的方法。一种方法包括在第一层中形成栅极或电极。该方法还包括在第二层中形成沟槽。该方法还包括在沟槽中形成第一金属层，使得第一金属层与栅极或电极电接触。该方法还包括在沟槽中形成牺牲材料。该方法还包括在牺牲材料上形成第二金属层并与第一金属层接触。该方法还包括去除牺牲材料，使得由第一和第二金属层围绕的微流体通道形成。

2. 发明申请

US20130119440A1 BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE 有权
标题翻译：生物传感器与微流体结构集成
公开(公告)号：US20130119440A1
公开(公告)日：2013-05-16
申请号：US13293795
申请日：2011-11-10
申请人： Kristin M. ACKERSON , John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Yen L. LIM
发明人： Kristin M. ACKERSON , John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Yen L. LIM
IPC分类号： H01L29/772 , H01L21/335
CPC分类号： G01N27/4145 , H01L29/772
摘要： A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.
摘要翻译：提供了由电极包围的微流体结构的生物传感器和围绕生物传感器的微流体结构形成电极的方法。一种方法包括在第一层中形成栅极或电极。该方法还包括在第二层中形成沟槽。该方法还包括在沟槽中形成第一金属层，使得第一金属层与栅极或电极电接触。该方法还包括在沟槽中形成牺牲材料。该方法还包括在牺牲材料上形成第二金属层并与第一金属层接触。该方法还包括去除牺牲材料，使得由第一和第二金属层围绕的微流体通道形成。

3. 发明授权

US08168474B1 Self-dicing chips using through silicon vias 失效
标题翻译：通过硅通孔的自切割芯片
公开(公告)号：US08168474B1
公开(公告)日：2012-05-01
申请号：US12987402
申请日：2011-01-10
申请人： James W. Adkisson , Panglijen Candra , Thomas J. Dunbar , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Yen L. Lim
发明人： James W. Adkisson , Panglijen Candra , Thomas J. Dunbar , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Yen L. Lim
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/76898
摘要： Systems and methods simultaneously form first openings and second openings in a substrate. The first openings are formed smaller than the second openings. The method also simultaneously forms a first material in the first openings and the second openings. The first material fills the first openings, and the first material lines the second openings. The method forms a second material different than the first material in the second openings. The second material fills the second openings. The method forms a plurality of integrated circuit structures over the first material and the second material within the second openings. The method applies mechanical stress to the substrate to cause the substrate to split along the first openings.
摘要翻译：系统和方法同时在衬底中形成第一开口和第二开口。第一开口形成为小于第二开口。该方法还同时在第一开口和第二开口中形成第一材料。第一材料填充第一开口，第一材料将第二开口排列。该方法形成与第二开口中的第一材料不同的第二材料。第二材料填充第二开口。该方法在第二开口内的第一材料和第二材料上形成多个集成电路结构。该方法对基板施加机械应力以使基板沿着第一开口分开。

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