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1. 发明授权

US5656841A Semiconductor device with contact hole 失效
标题翻译：具有接触孔的半导体器件
公开(公告)号：US5656841A
公开(公告)日：1997-08-12
申请号：US545398
申请日：1995-10-19
申请人： Hirofumi Watanabe , Kaihei Isshiki , Tetsurou Tanigawa , Yasuyuki Shindou , Katsunari Hanaoka
发明人： Hirofumi Watanabe , Kaihei Isshiki , Tetsurou Tanigawa , Yasuyuki Shindou , Katsunari Hanaoka
IPC分类号： H01L23/522 , H01L21/768 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L27/11
CPC分类号： H01L21/768 , H01L2924/0002 , Y10S257/903
摘要： In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed. Thus, resistance of a common contact having s three-dimensional structure is reduced.
摘要翻译：在半导体器件的制造方法中，在有源区域中生长栅极绝缘膜。此后，在栅极绝缘膜上形成N型多晶硅膜，并形成栅电极和多晶硅电极。接下来，将砷离子注入到栅极和多晶硅电极的整个表面上，从而在衬底上形成源极 - 漏极区域。然后在源极 - 漏极区域的整个表面上形成层间绝缘膜等。此后，在漏极区域与多晶硅电极部分重叠的位置处的漏极区域上形成接触孔。多晶硅电极的表面部分露出到接触孔中。此后，通过与层间绝缘膜作为掩模的接触孔注入磷酸根离子。将注入的离子热处理以激活这些注入的离子。此后，形成金属布线。因此，具有三维结构的普通接触的电阻降低。

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