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1. 发明申请

US20070230245A1 Semiconductor Storage Device 有权
标题翻译：半导体存储设备
公开(公告)号：US20070230245A1
公开(公告)日：2007-10-04
申请号：US10589066
申请日：2005-02-09
申请人： Masahiko Watanabe , Yasumichi Mori
发明人： Masahiko Watanabe , Yasumichi Mori
IPC分类号： G11C29/04
CPC分类号： G11C8/12 , G11C16/08 , G11C16/28 , G11C29/76 , G11C29/82
摘要： A semiconductor storage device according to the present invention comprises one or more memory planes 8 comprising a plurality of memory blocks 9, and a block selection circuit for decoding an block address signal for selecting the memory block 9 from the memory plane 8 to select the memory block, generates a dummy block address for selecting a dummy block that is different from the selected block address and a defective block address of a defective block by a predetermined logical operation targeted for a specific partial bit in address bits of the selected block address when the defective block is contained in the memory plane. A bit line connected to the selected memory cell selected by the selected block address and a bit line in the dummy block are connected to differential input terminals of a sense amplifier circuit 9.
摘要翻译：根据本发明的半导体存储装置包括一个或多个包括多个存储器块9的存储器平面8和一个块选择电路，用于解码用于从存储器平面8中选择存储器块9的块地址信号，以选择存储器块，产生一个虚拟块地址，用于当所选择的块地址的地址位中的特定部分位的目标地址为预定逻辑运算时，选择不同于所选择的块地址的虚拟块和缺陷块的缺陷块地址，缺陷块包含在存储器平面中。连接到由选择的块地址选择的所选存储单元的位线和伪块中的位线连接到读出放大器电路9的差分输入端。

2. 发明授权

US06947322B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06947322B2
公开(公告)日：2005-09-20
申请号：US10630641
申请日：2003-07-29
申请人： Shinsuke Anzai , Yasumichi Mori , Hidehiko Tanaka
发明人： Shinsuke Anzai , Yasumichi Mori , Hidehiko Tanaka
IPC分类号： G06F12/16 , G11C11/56 , G11C16/00 , G11C16/02 , G11C16/06 , G11C16/28 , G11C29/00 , G11C29/04 , G11C16/04
CPC分类号： G11C11/5642 , G11C7/06 , G11C16/28 , G11C29/70 , G11C2211/5623 , G11C2211/5641
摘要： A semiconductor memory device is provided, which comprising a memory cell array comprising a two-value memory region and a multi-value memory region, in which the two-value memory region comprises a plurality of memory cells each storing 1-bit data and the multi-value memory region comprises a plurality of memory cells each storing 2 or more-bit data, and a sense amplifier section common to data read of the two-value memory region and data read of the multi-value memory region, for reading data stored in a selected memory cell by comparing a potential of the selected memory cell with a reference potential.
摘要翻译：提供一种半导体存储器件，其包括存储单元阵列，该存储单元阵列包括二值存储区域和多值存储器区域，其中该二值存储器区域包括多个存储单元，每个存储器单元存储1位数据，多值存储区包括多个存储2位或更多比特数据的存储单元，以及读出两值存储区域的数据和多值存储器区域的数据读出共同的读出放大器单元，用于读取数据通过将所选择的存储器单元的电位与参考电位进行比较来存储在所选存储单元中。

3. 发明授权

US06442058B2 Control circuit and semiconductor device including same 失效
标题翻译：控制电路和包括其的半导体器件
公开(公告)号：US06442058B2
公开(公告)日：2002-08-27
申请号：US09834963
申请日：2001-04-13
申请人： Yasumichi Mori
发明人： Yasumichi Mori
IPC分类号： G11C1700
CPC分类号： G06F9/3822 , G06F9/26 , G06F9/261 , G06F9/268 , G06F9/30145 , G06F9/30181 , G06F9/30196 , G06F9/3814
摘要： A control circuit comprises an external command recognition section for recognizing an external command, the external command being an operation command input from outside the control circuit, an internal ROM bank including a plurality of storage regions, the internal ROM bank being used to store an internal code for achieving operations specified by the external command recognized by the external command recognition section, an internal ROM selection section for selecting a required storage region from the plurality of storage regions of the internal ROM bank in accordance with the external command recognized by the external command recognition section, a program counter for selecting and indicating an address of an internal command to be executed from a plurality of addresses of internal commands stored in the internal ROM bank, an internal command register for storing the internal command read from the internal ROM bank, and an internal command execution section for executing the internal command stored in the internal command register.
摘要翻译：控制电路包括用于识别外部命令的外部命令识别部分，作为从控制电路外部输入的操作命令的外部命令，包括多个存储区域的内部ROM组，内部ROM组用于存储内部用于实现由外部命令识别部识别的外部命令指定的操作的代码;内部ROM选择部分，用于根据由外部命令识别的外部命令从内部ROM组的多个存储区域中选择所需的存储区域识别部分，用于从存储在内部ROM组中的多个内部命令的地址中选择和指示要执行的内部命令的地址的程序计数器，用于存储从内部ROM存储体读取的内部命令的内部命令寄存器，以及用于执行in的内部命令执行部分内部命令存储在内部命令寄存器中。

4. 发明申请

US20050174868A1 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050174868A1
公开(公告)日：2005-08-11
申请号：US11051139
申请日：2005-02-04
申请人： Shinsuke Anzai , Yasumichi Mori
发明人： Shinsuke Anzai , Yasumichi Mori
IPC分类号： G11C16/02 , G11C11/56 , G11C13/00 , G11C16/06 , G11C16/28 , G11C16/34 , G11C11/34
CPC分类号： G11C16/28 , G11C11/5642 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C16/3436 , G11C2013/0054 , G11C2213/31
摘要： A nonvolatile semiconductor memory device comprises a readout circuit which reads data stored in a selected memory cell by applying predetermined voltage to the selected memory cell and a reference cell such that currents corresponding to the respective threshold voltage may flow, and comparing the current flowing in the selected memory cell with the current flowing in the reference cell. The readout circuit commonly uses the reference cell set in the same storage state for normal readout and for readout for program verification, and when the predetermined voltage is applied to the selected memory cell and the reference memory cell at the time of the readout for the program verification, it sets an applying condition to the reference memory cell such that its storage state may be shifted more in the program state direction than that in an applying condition at the time of the normal readout.
摘要翻译：非易失性半导体存储器件包括读出电路，其通过向所选择的存储单元施加预定电压来读取存储在所选择的存储单元中的数据，以及参考单元，使得可以流过对应于相应阈值电压的电流，并且比较流过选定的存储单元，电流在参考单元中流动。读出电路通常使用相同存储状态的参考单元设置用于正常读出和用于程序验证的读出，并且当在用于程序的读出时将预定电压施加到所选存储单元和参考存储单元时验证时，将参考存储单元的应用条件设置为使得其存储状态可以在程序状态方向上比在正常读出时的应用条件中更多地移位。

5. 发明授权

US07184334B2 Semiconductor memory device and method of testing semiconductor memory device 失效
标题翻译：半导体存储器件和半导体存储器件的测试方法
公开(公告)号：US07184334B2
公开(公告)日：2007-02-27
申请号：US11051346
申请日：2005-02-04
申请人： Masahiko Watanabe , Yasumichi Mori
发明人： Masahiko Watanabe , Yasumichi Mori
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C13/0028 , G11C13/0007 , G11C29/26 , G11C29/76 , G11C2029/2602 , G11C2213/31
摘要： A semiconductor memory device comprises at least one memory plane in which a plurality of memory blocks are arranged, and a block decoder circuit which decodes a block address signal for selecting the memory block from the memory plane and outputs block selection signals for selecting the memory block, as well as puts all of the block selection signals in a selected state and output them in a predetermined test mode, and a block selection signal inversion circuit which inverts or non-inverts signal levels of the block selection signals.
摘要翻译：半导体存储器件包括至少一个其中布置有多个存储器块的存储器平面;以及块解码器电路，用于解码用于从存储器平面选择存储块的块地址信号，并输出用于选择存储块的块选择信号并且将所有块选择信号置于选择状态并以预定的测试模式输出;以及块选择信号反相电路，其对块选择信号的信号电平进行反相或非反相。

6. 发明授权

US07020037B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US07020037B2
公开(公告)日：2006-03-28
申请号：US11051139
申请日：2005-02-04
申请人： Shinsuke Anzai , Yasumichi Mori
发明人： Shinsuke Anzai , Yasumichi Mori
IPC分类号： G11C7/02
CPC分类号： G11C16/28 , G11C11/5642 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C16/3436 , G11C2013/0054 , G11C2213/31
摘要： A nonvolatile semiconductor memory device includes a readout circuit which reads data stored in a selected memory cell by applying predetermined voltage to the selected memory cell and a reference cell such that currents corresponding to the respective threshold voltage may flow, and comparing the current flowing in the selected memory cell with the current flowing in the reference cell. The readout circuit commonly uses the reference cell set in the same storage state for normal readout and for readout for program verification, and when the predetermined voltage is applied to the selected memory cell and the reference memory cell at the time of the readout for the program verification, it sets an applying condition to the reference memory cell such that its storage state may be shifted more in the program state direction than that in an applying condition at the time of the normal readout.
摘要翻译：非易失性半导体存储器件包括：读出电路，通过向所选择的存储单元施加预定电压，读取存储在所选择的存储单元中的数据;以及参考单元，使得与各个阈值电压相对应的电流可以流动，选定的存储单元，电流在参考单元中流动。读出电路通常使用相同存储状态的参考单元设置用于正常读出和用于程序验证的读出，并且当在用于程序的读出时将预定电压施加到所选择的存储单元和参考存储单元时验证时，将参考存储单元的应用条件设置为使得其存储状态可以在程序状态方向上比在正常读出时的应用条件中更多地移位。

7. 发明申请

US20050174862A1 Semiconductor memory device and method of testing semiconductor memory device 失效
标题翻译：半导体存储器件和半导体存储器件的测试方法
公开(公告)号：US20050174862A1
公开(公告)日：2005-08-11
申请号：US11051346
申请日：2005-02-04
申请人： Masahiko Watanabe , Yasumichi Mori
发明人： Masahiko Watanabe , Yasumichi Mori
IPC分类号： G11C16/02 , G11C8/12 , G11C11/15 , G11C13/00 , G11C16/08 , G11C29/00 , G11C29/04 , G11C29/14 , G11C29/26 , G11C29/56 , G11C7/00
CPC分类号： G11C13/0028 , G11C13/0007 , G11C29/26 , G11C29/76 , G11C2029/2602 , G11C2213/31
摘要： A semiconductor memory device comprises at least one memory plane in which a plurality of memory blocks are arranged, and a block decoder circuit which decodes a block address signal for selecting the memory block from the memory plane and outputs block selection signals for selecting the memory block, as well as puts all of the block selection signals in a selected state and output them in a predetermined test mode, and a block selection signal inversion circuit which inverts or non-inverts signal levels of the block selection signals.
摘要翻译：半导体存储器件包括至少一个其中布置有多个存储器块的存储器平面;以及块解码器电路，用于解码用于从存储器平面选择存储块的块地址信号，并输出用于选择存储块的块选择信号并且将所有块选择信号置于选择状态并以预定的测试模式输出;以及块选择信号反相电路，其对块选择信号的信号电平进行反相或非反相。

8. 发明授权

US06549475B2 Semiconductor memory device and information device 有权
公开(公告)号：US06549475B2
公开(公告)日：2003-04-15
申请号：US10183857
申请日：2002-06-25
申请人： Ken Nakazawa , Ken Sumitani , Haruyasu Fukui , Yasumichi Mori
发明人： Ken Nakazawa , Ken Sumitani , Haruyasu Fukui , Yasumichi Mori
IPC分类号： G11C1604
CPC分类号： G11C7/22
摘要： A semiconductor memory device in which an input command controls an operation includes a command state machine for decoding the input command and outputting the decoding result; a plurality of status registers for storing state information of the semiconductor memory device; a first switching circuit for receiving data from the plurality of status registers, and selectively outputting the data from at least one of the plurality of status registers to a first data bus; and a second switching circuit for receiving the data on the first data bus and data from a sense amplifier, and selectively outputting either one of data to a second data bus. At least the first switching circuit, among the first and second switching circuits, is controlled by the decoding result output by the command state machine.

9. 发明授权

US06400602B2 Semiconductor memory device and restoration method therefor 有权
标题翻译：半导体存储器件及其恢复方法
公开(公告)号：US06400602B2
公开(公告)日：2002-06-04
申请号：US09818194
申请日：2001-03-26
申请人： Hidekazu Takata , Kengo Maeda , Yasumichi Mori
发明人： Hidekazu Takata , Kengo Maeda , Yasumichi Mori
IPC分类号： G11C1606
CPC分类号： G11C29/76 , G11C29/88 , G11C29/883
摘要： A semiconductor memory device includes: a plurality of memory cell regions, each comprising at least one memory cell; a non-volatile memory section which accepts external writing; and unselecting means for designating at least one of the plurality of memory cell regions to be inaccessible based on data written to the non-volatile memory section. At least one operation type is performed for at least one accessible memory cell region, which is not designated to be inaccessible, among the plurality of memory cell regions.
摘要翻译：半导体存储器件包括：多个存储单元区域，每个存储单元区域包括至少一个存储单元; 接受外部写入的非易失性存储器部分; 以及取消选择装置，用于基于写入所述非易失性存储器部分的数据来指定所述多个存储器单元区域中的至少一个是不可访问的。对于多个存储单元区域中的至少一个不被指定为不可访问的可访问存储单元区域执行至少一种操作类型。

10. 发明授权

US4256531A Process for producing single crystal of yttrium-iron garnet or solid solution thereof 失效
标题翻译：制备钇 - 铁石榴石或其固溶体的单晶的方法
公开(公告)号：US4256531A
公开(公告)日：1981-03-17
申请号：US876612
申请日：1978-02-10
申请人： Shigeyuki Kimura , Isamu Shindo , Yasumichi Mori , Kenji Kitamura , Nobuo Ii
发明人： Shigeyuki Kimura , Isamu Shindo , Yasumichi Mori , Kenji Kitamura , Nobuo Ii
IPC分类号： C30B13/00 , C30B13/02
CPC分类号： C30B13/02 , C30B13/00 , C30B29/28
摘要： A single crystal of yttrium-iron garnet or solid solution comprising aluminum oxide component, gallium oxide component, iron oxide and/or the other rare earth oxide component is produced by a floating zone method.
摘要翻译：通过浮区法制造钇 - 铁石榴石或包含氧化铝组分，氧化镓组分，氧化铁和/或其它稀土氧化物组分的单晶。

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