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1. 发明授权

US08619680B2 Radio communication system, base station apparatus, radio resource control method, and non-transitory computer readable medium 有权
标题翻译：无线电通信系统，基站装置，无线电资源控制方法和非暂时计算机可读介质
公开(公告)号：US08619680B2
公开(公告)日：2013-12-31
申请号：US13366032
申请日：2012-02-03
申请人： Motoki Morita , Yasuhiko Matsunaga
发明人： Motoki Morita , Yasuhiko Matsunaga
IPC分类号： H04Q7/00 , H04J3/16
CPC分类号： H04W72/082 , H04W16/10 , H04W52/244 , H04W84/045 , H04W88/08
摘要： A base station includes a radio communication unit, a resource adjustment unit, a resource division unit and a detection unit. The resource adjustment unit determines radio resources to be allocated to a downlink communication from a radio resource region shared with another base station. The resource division unit limits, to a first radio resource segment which is a part of the radio resource region, radio resources in response to estimating that communication quality of the downlink communication using the limited first radio resource segment is improved over the communication quality of the first downlink communication when using the entire range of the radio resource region that is shared with the other base station. The detection unit detects execution of resource division by the other base station for limiting radio resources used for another downlink communication between the other base station and a mobile station to a second radio resource segment.
摘要翻译：基站包括无线电通信单元，资源调整单元，资源划分单元和检测单元。资源调整单元从与另一基站共享的无线资源区域确定要分配给下行链路通信的无线资源。所述资源分割单元对作为所述无线资源区域的一部分的第一无线资源段限制无线资源，所述无线资源响应于使用所述受限的第一无线资源段的所述下行通信的通信质量相对于当使用与另一个基站共享的无线电资源区域的整个范围时的第一下行链路通信。检测单元检测另一基站的资源划分的执行，用于将用于另一基站与移动台之间的另一下行链路通信的无线资源限制到第二无线电资源段。

2. 发明申请

US20130157680A1 RADIO COMMUNICATION SYSTEM, RADIO RESOURCE DETERMINATION METHOD THEREFOR, COMMUNICATION MANAGEMENT DEVICE, AND CONTROL METHOD AND CONTROL PROGRAM FOR COMMUNICATION MANAGEMENT DEVICE 有权
标题翻译：无线电通信系统，无线电资源确定方法，通信管理设备以及通信管理设备的控制方法和控制程序
公开(公告)号：US20130157680A1
公开(公告)日：2013-06-20
申请号：US13818155
申请日：2011-08-17
申请人： Motoki Morita , Kojiro Hamabe , Yasuhiko Matsunaga
发明人： Motoki Morita , Kojiro Hamabe , Yasuhiko Matsunaga
IPC分类号： H04W72/08
CPC分类号： H04W72/082 , H04B17/26 , H04W24/08 , H04W52/225 , H04W52/244 , H04W84/105
摘要： In order to effectively determine an optimized radio resource, a radio communication system (100) includes a plurality of first base stations (111) and a plurality of first mobile stations (112) respectively connected to the plurality of first base stations (111). In the radio communication system (100), there are included calculation means (103) for calculating a statistic (130) by aggregating interference levels of radio waves between the plurality of first base stations (111) and second mobile stations (122) connected to a second base station (121) that forms a second cell (120) larger than a first cell (110) formed by each of the first base stations (111); and determination means (104) for determining, based on the statistic (130), a radio resource to be used by the plurality of first base stations (111) or the plurality of first mobile stations (112).
摘要翻译：为了有效地确定优化的无线电资源，无线电通信系统（100）包括分别连接到多个第一基站（111）的多个第一基站（111）和多个第一移动台（112）。在无线电通信系统（100）中，包括计算装置（103），用于通过聚合多个第一基站（111）和第二移动站（122）之间的无线电波的干扰电平来计算统计量（130）第二基站（121），形成比由所述第一基站（111）中的每一个形成的第一小区（110）大的第二小区（120）。以及用于根据所述统计（130）确定要由所述多个第一基站（111）或所述多个第一移动站（112）使用的无线电资源的确定装置（104）。

3. 发明申请

US20130137473A1 WIRELESS COMMUNICATION SYSTEM, NEIGHBOR CELL LIST OPTIMIZATION SYSTEM, BASE STATION, AND NEIGHBOR CELL LIST UPDATE METHOD 有权
标题翻译：无线通信系统，邻居单元列表优化系统，基站和邻居单元列表更新方法
公开(公告)号：US20130137473A1
公开(公告)日：2013-05-30
申请号：US13813710
申请日：2011-08-03
申请人： Yoshinori Watanabe , Yasuhiko Matsunaga , Kojiro Hamabe
发明人： Yoshinori Watanabe , Yasuhiko Matsunaga , Kojiro Hamabe
IPC分类号： H04W88/02
CPC分类号： H04W88/02 , H04W16/18 , H04W24/10 , H04W36/00 , H04W36/0083 , H04W36/0088
摘要： The present invention is applicable to a wireless communication system provided with mobile terminals and base stations that manage cells to which the mobile terminals are connected. The wireless communication system of the present invention has a new cell detection unit that detects, from among neighbor cells which are adjacent to the cells to which the mobile terminals are connected, new cells that have newly started or whose operation has resumed or whose geographical range has changed, and a neighbor cell list generation unit which preferentially registers new cells that have been detected by the new cell detection unit in neighbor cell lists in which are registered neighbor cells that are candidates for handover destinations of the mobile terminals.
摘要翻译：本发明可应用于具有管理移动终端所连接的小区的移动终端和基站的无线通信系统。本发明的无线通信系统具有：新的小区检测单元，从与移动终端连接的小区相邻的相邻小区中检测到新开始的新的小区，或者已经恢复了其操作的地址范围以及相邻小区列表生成单元，其将登记的作为移动终端的切换目的地的候补的相邻小区的相邻小区列表中的新小区检测单元检测到的新的小区优先登记。

4. 发明授权

US08428520B2 Margin design apparatus, margin design system, margin design method, and program 有权
标题翻译：保证金设计设备，保证金设计制度，保证金设计方法和程序
公开(公告)号：US08428520B2
公开(公告)日：2013-04-23
申请号：US12922795
申请日：2009-03-18
申请人： Kosei Kobayashi , Yasuhiko Matsunaga , Yoshinori Watanabe
发明人： Kosei Kobayashi , Yasuhiko Matsunaga , Yoshinori Watanabe
IPC分类号： H04B17/00
CPC分类号： H04W24/00 , H04B17/26 , H04B17/327 , H04B17/3912
摘要： Provided is a technique of calculating a proper margin according to the area or a radio propagation estimation method in the area design of wireless communication using a radio propagation simulator. From a storage part wherein information relating to positions where deterioration of a communication quality or a radio quality is confirmed and information relating to the radio conditions at the positions are associated with each other, a margin design system extracts positions where the radio conditions are equal, estimates the radio quality at the positions by the radio propagation simulator, and calculates the margin of a radio quality estimated value on the basis of the estimated radio quality.
摘要翻译：提供了一种根据无线传播模拟器的无线通信的区域设计中的区域或无线传播估计方法计算适当余量的技术。从其中确定与通信质量或无线电质量恶化的位置有关的信息和与位置的无线电条件相关的信息相关联的信息的存储部分，提取无线电条件相等的位置，通过无线电传播模拟器估计位置处的无线电质量，并且基于估计的无线电质量来计算无线电质量估计值的余量。

5. 发明申请

US20120037976A1 NONVOLATILE SEMICONDUCTOR MEMORY AND FABRICATION METHOD FOR THE SAME 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US20120037976A1
公开(公告)日：2012-02-16
申请号：US13235948
申请日：2011-09-19
申请人： Kikuko Sugimae , Masayuki Ichige , Fumitaka Arai , Yasuhiko Matsunaga , Atsuhiro Sato
发明人： Kikuko Sugimae , Masayuki Ichige , Fumitaka Arai , Yasuhiko Matsunaga , Atsuhiro Sato
IPC分类号： H01L27/105
CPC分类号： H01L27/115 , G11C16/0416 , G11C16/0433 , G11C16/0483 , G11C16/30 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile semiconductor memory includes a memory cell transistor including a first floating gate electrode layer formed on a first tunneling insulating film, a first inter-gate insulating film, first and second control gate electrode layers, and a first metallic silicide film; a high voltage transistor including a high voltage gate electrode layer formed on a high voltage gate insulating film, a second inter-gate insulating film having an aperture, third and fourth control gate electrode layers, and a second metallic silicide film; a low voltage transistor including a second floating gate electrode layer formed on a second tunneling insulating film, a third inter-gate insulating film having an aperture, fifth and sixth control gate electrode layers, and a third metallic silicide film; and a liner insulating film directly disposed on source and drain regions of each of the memory cell transistor, the low voltage transistor, and the high voltage transistor.
摘要翻译：非易失性半导体存储器包括：存储单元晶体管，包括形成在第一隧穿绝缘膜上的第一浮栅电极层，第一栅间绝缘膜，第一和第二控制栅极电极层以及第一金属硅化物膜; 包括形成在高压栅极绝缘膜上的高电压栅极电极层，具有孔径的第二栅极间绝缘膜，第三和第四控制栅极电极层以及第二金属硅化物膜的高压晶体管; 包括形成在第二隧道绝缘膜上的第二浮栅电极层，具有孔的第三栅间绝缘膜，第五和第六控制栅电极层和第三金属硅化物膜的低压晶体管; 以及直接设置在每个存储单元晶体管，低压晶体管和高压晶体管的源极和漏极区域上的衬垫绝缘膜。

6. 发明授权

US08098527B2 Semiconductor memory device and manufacturing method thereof 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08098527B2
公开(公告)日：2012-01-17
申请号：US12649822
申请日：2009-12-30
申请人： Koichi Fukuda , Dai Nakamura , Yasuhiko Matsunaga
发明人： Koichi Fukuda , Dai Nakamura , Yasuhiko Matsunaga
IPC分类号： G11C11/34
CPC分类号： H01L27/11519 , G11C16/0483 , H01L27/0207 , H01L27/11521 , H01L27/11526 , H01L27/11529
摘要： A semiconductor memory device includes a semiconductor substrate; a memory cell array on the semiconductor substrate, the memory cell array comprising a plurality of memory cells capable of electrically storing data; a sense amplifier configured to detect the data stored in at least one of the memory cells; a cell source driver electrically connected to source side terminals of the memory cells and configured to supply a source potential to at least one of the source side terminals of the memory cells; a first wiring configured to electrically connect between at least one of the source side terminals of the memory cells and the cell source driver; and a second wiring formed in a same wiring layer as the first wiring, the second wiring being insulated from the first wiring and being electrically connected to the sense amplifier, wherein the first wiring and the second wiring have a plurality of through holes provided at a predetermined interval.
摘要翻译：半导体存储器件包括半导体衬底; 所述存储单元阵列包括能够电存储数据的多个存储单元;存储单元阵列，感测放大器，被配置为检测存储在所述存储器单元中的至少一个中的数据; 电池源驱动器，电连接到存储器单元的源极端子，并且被配置为向存储器单元的至少一个源极侧端子提供源极电位; 第一布线，被配置为电连接所述存储单元的至少一个源极端子和所述单元源驱动器; 以及形成在与所述第一布线相同的布线层中的第二布线，所述第二布线与所述第一布线绝缘并且电连接到所述读出放大器，其中所述第一布线和所述第二布线具有设置在所述第一布线的多个通孔预定间隔。

7. 发明授权

US08095819B2 Communication network failure cause analysis system, failure cause analysis method, and failure cause analysis program 有权
标题翻译：通信网络故障原因分析系统，故障原因分析方法和故障原因分析程序
公开(公告)号：US08095819B2
公开(公告)日：2012-01-10
申请号：US12663180
申请日：2008-06-06
申请人： Yoshinori Watanabe , Yasuhiko Matsunaga
发明人： Yoshinori Watanabe , Yasuhiko Matsunaga
IPC分类号： G06F11/00
CPC分类号： H04M3/2254 , G06F11/0709 , G06F11/079 , H04L41/0631
摘要： A failure cause analysis system for estimating a cause of a failure in a communication network from recorded contents of internal processing of a communication apparatus includes: feature extraction means for extracting a statistical feature of the recorded contents at a time of occurrence of a failure; and failure cause estimation means for estimating a failure cause based on similarity between a statistical feature of the recorded contents that is acquired at a time of occurrence of a past failure with a known failure cause and the statistical feature of the recorded contents that is acquired at the time of occurrence of the failure. The failure cause analysis system of a communication network provided can acquire the correspondence between failure features and failure causes from past failure cases irrespective of the number of cases as to communication network failures that are detected from process logs retained in communication apparatuses, and quantitatively incorporate the range of dispersion of the features into a judgment to estimate the cause of occurrence of a failure.
摘要翻译：用于从通信设备的内部处理的记录内容中估计通信网络中的故障原因的故障原因分析系统包括：特征提取装置，用于在故障发生时提取记录内容的统计特征; 以及故障原因估计装置，用于基于在过去故障发生时获取的所记录内容的统计特征与已知故障原因与所获取的记录内容的统计特征之间的相似度来估计故障原因发生故障的时间。所提供的通信网络的故障原因分析系统可以获得来自过去故障情况的故障特征和故障原因之间的对应关系，而不管从通信设备中保留的进程日志中检测到的通信网络故障的数量，并定量地并入将特征的分散范围判断为发生故障的原因。

8. 发明申请

US20110263244A1 QUALITY MONITORING SYSTEM, QUALITY MONITORING APPARATUS, AND QUALITY MONITORING METHOD IN WIRELESS COMMUNICATION NETWORK 有权
标题翻译：质量监测系统，质量监测装置和无线通信网络质量监测方法
公开(公告)号：US20110263244A1
公开(公告)日：2011-10-27
申请号：US13063857
申请日：2009-08-25
申请人： Kosei Kobayashi , Yasuhiko Matsunaga
发明人： Kosei Kobayashi , Yasuhiko Matsunaga
IPC分类号： H04W24/00
CPC分类号： H04W24/08 , H04W24/10
摘要： A mobile terminal includes a measuring unit that measures at least the moving speed of the self terminal and communication quality of wireless communication, and a communication unit that transmits terminal information including moving speed information and communication quality information. A quality monitoring apparatus (90) includes a terminal information collection unit (901) that collects the terminal information from at least one mobile terminal, and a terminal information classification unit (903) and a quality analyzing unit (904) that monitor communication quality in a predetermined target area for each moving speed range of the mobile terminal based on the collected terminal information.
摘要翻译：移动终端包括至少测量自身终端的移动速度和无线通信的通信质量的测量单元，以及发送包括移动速度信息和通信质量信息的终端信息的通信单元。质量监视装置（90）包括从至少一个移动终端收集终端信息的终端信息收集单元（901），以及监视通信质量的终端信息分类单元（903）和质量分析单元（904）基于所收集的终端信息对移动终端的每个移动速度范围的预定目标区域。

9. 发明申请

US20110018046A1 METHOD OF MANUFACTURE OF CONTACT PLUG AND INTERCONNECTION LAYER OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：触点插头和半导体器件互连层的制造方法
公开(公告)号：US20110018046A1
公开(公告)日：2011-01-27
申请号：US12900110
申请日：2010-10-07
申请人： Hiroyuki KUTSUKAKE , Yasuhiko MATSUNAGA , Shoichi MIYAZAKI
发明人： Hiroyuki KUTSUKAKE , Yasuhiko MATSUNAGA , Shoichi MIYAZAKI
IPC分类号： H01L29/68
CPC分类号： H01L23/485 , H01L27/0207 , H01L27/105 , H01L27/11526 , H01L27/11529 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device including forming two first gate electrodes along a first direction on a first surface of a semiconductor substrate and source/drain areas sandwiching a channel region under each of the first gate electrodes, forming a first interlayer insulating layer to fill a region between the first gate electrodes, lowering a top of the first interlayer insulating layer, depositing a second interlayer insulating layer on the first interlayer insulating layer and the first gate electrodes, planarizing a surface of the second interlayer insulating layer, and forming an interconnect layer in the second interlayer insulating layer and a contact plug in the first interlayer insulating layer and the second interlayer insulating layer so that the contact plug is in contact with the interconnect layer and one of the source/drain areas.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底的第一表面上沿着第一方向形成两个第一栅电极和在每个第一栅电极下夹着沟道区的源/漏区，形成第一层间绝缘层以填充在所述第一栅电极之间的区域中，降低所述第一层间绝缘层的顶部，在所述第一层间绝缘层上沉积第二层间绝缘层和所述第一栅电极，使所述第二层间绝缘层的表面平坦化，以及形成互连层和第一层间绝缘层和第二层间绝缘层中的接触塞，使得接触插塞与互连层和源极/漏极区之一接触。

10. 发明申请

US20100173471A1 NONVOLATILE SEMICONDUCTOR MEMORY AND FABRICATION METHOD FOR THE SAME 有权
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US20100173471A1
公开(公告)日：2010-07-08
申请号：US12720062
申请日：2010-03-09
申请人： Kikuko Sugimae , Masayuki Ichige , Fumitaka Arai , Yasuhiko Matsunaga , Atsuhiro Sato
发明人： Kikuko Sugimae , Masayuki Ichige , Fumitaka Arai , Yasuhiko Matsunaga , Atsuhiro Sato
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L27/115 , G11C16/0416 , G11C16/0433 , G11C16/0483 , G11C16/30 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile semiconductor memory includes a memory cell transistor including a first floating gate electrode layer formed on a first tunneling insulating film, a first inter-gate insulating film, a first and a second control gate electrode layer, and a first metallic silicide film; a high voltage transistor including a high voltage gate electrode layer formed on the high voltage gate insulating film, a second inter-gate insulating film having an aperture, a third and a fourth control gate electrode layer, and a second metallic silicide film; a low voltage transistor including a second floating gate electrode layer formed on the second tunneling insulating film, a third inter-gate insulating film having an aperture, a fifth and a sixth control gate electrode layer, and a third metallic silicide film; and a liner insulating film directly disposed on a first source and drain region of the memory cell transistor, a second source and drain region of the low voltage transistor, and a third source and drain region of the high voltage transistor.
摘要翻译：非易失性半导体存储器包括：存储单元晶体管，包括形成在第一隧道绝缘膜上的第一浮栅电极层，第一栅间绝缘膜，第一和第二控制栅极电极层和第一金属硅化物膜; 包括形成在高压栅极绝缘膜上的高电压栅极电极层，具有孔径的第二栅极间绝缘膜，第三和第四控制栅极电极层和第二金属硅化物膜的高压晶体管; 包括形成在第二隧道绝缘膜上的第二浮栅电极层，具有孔的第三栅间绝缘膜，第五和第六控制栅极电极层和第三金属硅化物膜的低压晶体管; 以及直接设置在存储单元晶体管的第一源极和漏极区域，低压晶体管的第二源极和漏极区域以及高压晶体管的第三源极和漏极区域中的衬垫绝缘膜。

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