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    • 3. 发明申请
    • METHOD AND SYSTEM FOR INSTANTLY TRANSLATING TEXT WITHIN IMAGE
    • 用于在图像中瞬时翻译文本的方法和系统
    • US20090063129A1
    • 2009-03-05
    • US12201243
    • 2008-08-29
    • Tony TsaiLiang HuangYan Jin
    • Tony TsaiLiang HuangYan Jin
    • G06F17/28
    • G06F17/289G06K9/228
    • A method and a system for instantly translating text within an image are provided. The method and the system are suitable for using a service end device to translate text within the image captured by a portable communication device. First, the image is captured by the portable communication device, and then transmitted to the service end device through a communication network. Next, the text within the image is recognized and translated into translation text by the service end device. The translation text is transmitted back to the portable communication device through the communication network and displayed by the portable communication device. Thereby, a user can take an image at any time and get to know what it means immediately.
    • 提供了一种用于立即翻译图像内的文本的方法和系统。 该方法和系统适用于使用服务端设备来翻译由便携式通信设备捕获的图像内的文本。 首先,图像由便携式通信装置捕获,然后通过通信网络发送到服务端设备。 接下来,图像中的文本被服务端设备识别并翻译成翻译文本。 翻译文本通过通信网络被传送回便携式通信设备并由便携式通信设备显示。 因此,用户可以随时拍摄图像,并立即知道它的意思。
    • 7. 发明授权
    • Metal-oxide-semiconductor (MOS) device and method for fabricating the same
    • 金属氧化物半导体(MOS)器件及其制造方法
    • US09059202B2
    • 2015-06-16
    • US13807315
    • 2011-11-30
    • Yan Jin
    • Yan Jin
    • H01L21/02H01L29/66H01L29/423H01L29/78
    • H01L29/66477H01L29/42368H01L29/78H01L29/7836
    • A Metal-Oxide-Semiconductor (MOS) device is disclosed. The MOS device includes a substrate, a well region formed in the substrate, and a gate located on the substrate. The MOS device also includes a first lightly-doped region arranged in the well region at a first side of the gate and overlapping with the gate, and a second lightly-doped region arranged in the well region at a second side of the gate and overlapping with the gate. Further, the MOS device includes a first heavily-doped region formed in the first lightly-doped region, and a second heavily-doped region formed in the second lightly-doped region. The MOS device also includes a first high-low-voltage gate oxide boundary arranged between the first heavily-doped region and the gate, and a second high-low-voltage gate oxide boundary arranged between the second heavily-doped region and the gate. The gate covers the first high-low-voltage gate oxide boundary and the second high-low-voltage gate oxide boundary at the first side and the second side of the gate, respectively.
    • 公开了一种金属氧化物半导体(MOS)器件。 MOS器件包括衬底,形成在衬底中的阱区和位于衬底上的栅极。 MOS器件还包括布置在栅极的第一侧的阱区中并与栅极重叠的第一轻掺杂区域和布置在栅极第二侧的阱区中的第二轻掺杂区域,并且重叠 与门。 此外,MOS器件包括形成在第一轻掺杂区域中的第一重掺杂区域和形成在第二轻掺杂区域中的第二重掺杂区域。 MOS器件还包括布置在第一重掺杂区域和栅极之间的第一高低电压栅极氧化物边界和布置在第二重掺杂区域和栅极之间的第二高低压栅极氧化物边界。 栅极分别在栅极的第一侧和第二侧覆盖第一高低压栅极氧化物边界和第二高低压栅极氧化物边界。