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1. 发明授权

US10602086B2 Methods of operating image sensors 有权
公开(公告)号：US10602086B2
公开(公告)日：2020-03-24
申请号：US14883453
申请日：2015-10-14
申请人： Seung-Hyuk Chang , Yoon-Dong Park , Yong-Jei Lee
发明人： Seung-Hyuk Chang , Yoon-Dong Park , Yong-Jei Lee
IPC分类号： H04N5/351 , H04N5/225 , H04N13/254 , H04N13/271 , G01S7/481 , G01S17/06
摘要： A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.

2. 发明授权

US07545423B2 Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same 有权
标题翻译：具有暴露至少主像素阵列区域的钝化层的图像传感器及其制造方法
公开(公告)号：US07545423B2
公开(公告)日：2009-06-09
申请号：US11044135
申请日：2005-01-27
申请人： Young Hoon Park , Ki Hong Kim , Bum Suk Kim , Jeong Hoon Bae , Yu Jin Ahn , Jung Chak Ahn , Soo Cheol Lee , Yong Jei Lee , Sung In Hwang
发明人： Young Hoon Park , Ki Hong Kim , Bum Suk Kim , Jeong Hoon Bae , Yu Jin Ahn , Jung Chak Ahn , Soo Cheol Lee , Yong Jei Lee , Sung In Hwang
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L27/14685
摘要： A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.
摘要翻译：具有改进的灵敏度的CMOS图像传感器包括形成在半导体衬底上的有源像素阵列区域的主像素阵列区域。钝化层形成在传感器上方，并且至少部分地从主像素阵列区域去除，使得由主像素阵列检测到的入射光不通过钝化层。由钝化层的材料引起的光学吸收和折射被消除，导致具有改善的光学灵敏度的图像传感器。

3. 发明申请

US20080012973A1 Image sensors and image sensing methods selecting photocurrent paths according to incident light 审中-公开
标题翻译：图像传感器和图像感测方法根据入射光选择光电流路径
公开(公告)号：US20080012973A1
公开(公告)日：2008-01-17
申请号：US11806594
申请日：2007-06-01
申请人： Jong-Eun Park , Yong-Jei Lee
发明人： Jong-Eun Park , Yong-Jei Lee
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/378
摘要： Example embodiments may be directed to CMOS image sensors and image sensing methods selecting a path for photocurrent according to the quantity or amount of incident light. The CMOS image sensor may include a pixel array comprised of a plurality of pixel pairs. A pixel pair may include a first pixel, including a first photo diode, a first pair of transistors, and a first floating diffusion node having a first capacitance. The pixel pair may further include a second pixel, including a second photo diode, a second pair of transistors, and a second floating diffusion node having a second capacitance. A first one of the first pair of transistors may be connected between the first photo diode and the first floating diffusion node. A second one of the first pair of transistors may be connected between the first photo diode and the second floating diffusion node. A first one of the second pair of transistors may be connected between the second photo diode and the second floating diffusion node. A second one of the second pair of transistors may be connected between the second photo diode and a first floating diffusion node of a next pixel pair. The first capacitance of the first floating diffusion node may be greater than the second capacitance of the second floating diffusion node.
摘要翻译：示例性实施例可以针对CMOS图像传感器和图像感测方法，其根据入射光的量或量选择光电流的路径。 CMOS图像传感器可以包括由多个像素对组成的像素阵列。像素对可以包括第一像素，包括第一光电二极管，第一对晶体管和具有第一电容的第一浮动扩散节点。像素对还可以包括第二像素，包括第二光电二极管，第二对晶体管和具有第二电容的第二浮动扩散节点。第一对晶体管中的第一对可以连接在第一光电二极管和第一浮动扩散节点之间。第一对晶体管中的第二对可以连接在第一光电二极管和第二浮动扩散节点之间。第二对晶体管中的第一对可以连接在第二光电二极管和第二浮动扩散节点之间。第二对晶体管中的第二对可以连接在第二光电二极管和下一个像素对的第一浮动扩散节点之间。第一浮动扩散节点的第一电容可以大于第二浮动扩散节点的第二电容。

4. 发明申请

US20160037094A1 METHODS OF OPERATING IMAGE SENSORS 审中-公开
标题翻译：操作图像传感器的方法
公开(公告)号：US20160037094A1
公开(公告)日：2016-02-04
申请号：US14883453
申请日：2015-10-14
申请人： Seung-Hyuk CHANG , Yoon-Dong PARK , Yong-Jei LEE
发明人： Seung-Hyuk CHANG , Yoon-Dong PARK , Yong-Jei LEE
IPC分类号： H04N5/351 , G01S17/06 , G01S7/481
CPC分类号： H04N5/351 , G01S7/4811 , G01S17/06 , H04N5/2256 , H04N13/254 , H04N13/271
摘要： A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.
摘要翻译：操作三维图像传感器的方法可以包括：使用由光源模块发射的光获得对象的位置信息，所述三维图像传感器包括具有光源和透镜的光源模块; 以及基于获得的物体的位置信息来调整光源与透镜的相对位置。操作图像传感器的方法可以包括：使用由光源模块发射的光获得对象的位置信息，所述图像传感器包括光源模块; 以及基于所获得的位置信息来调整由所述光源模块发射的光的发射角。

5. 发明申请

US20130126716A1 PIXEL CIRCUIT, DEPTH SENSOR AND OPERATING METHOD 有权
标题翻译：像素电路，深度传感器和操作方法
公开(公告)号：US20130126716A1
公开(公告)日：2013-05-23
申请号：US13611607
申请日：2012-09-12
申请人： YONG-JEI LEE , YOON-DONG PARK , YOUNG-GU JIN
发明人： YONG-JEI LEE , YOON-DONG PARK , YOUNG-GU JIN
IPC分类号： G01J1/44
CPC分类号： G01J1/44 , G01J1/0228 , G01J1/18 , G01S7/4914 , G01S17/89 , H04N5/3696
摘要： A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.
摘要翻译：用于在第一操作模式（高入射光强度）或第二操作模式（低入射光强度）中的检测周期和输出周期中操作的深度传感器的像素电路。像素电路包括响应于入射光而产生电荷的光接收单元，信号生成单元响应于在检测周期期间的发送信号，复位信号和选择信号在FDN中累积电荷，并且生成具有对应于在输出周期期间在FDN处显现的电压的电平，以及耦合在电源电压和光接收单元之间的刷新晶体管，并且响应于刷新信号将电荷放电到电源电压。

6. 发明申请

US20120249740A1 THREE-DIMENSIONAL IMAGE SENSORS, CAMERAS, AND IMAGING SYSTEMS 审中-公开
标题翻译：三维图像传感器，摄像机和成像系统
公开(公告)号：US20120249740A1
公开(公告)日：2012-10-04
申请号：US13432704
申请日：2012-03-28
申请人： Tae-Yon LEE , Joon-Ho LEE , Yoon-Dong PARK , Kyoung-Ho HA , Yong-Jei LEE , Kwang-Hyuk BAE , Kyu-Min KYUNG , Tae-Chan KIM
发明人： Tae-Yon LEE , Joon-Ho LEE , Yoon-Dong PARK , Kyoung-Ho HA , Yong-Jei LEE , Kwang-Hyuk BAE , Kyu-Min KYUNG , Tae-Chan KIM
IPC分类号： H04N13/02 , H01L27/146
CPC分类号： H04N13/271 , H04N13/207 , H04N13/254
摘要： A three-dimensional image sensor may include a light source module configured to emit at least one light to an object, a sensing circuit configured to polarize a received light that represents the at least one light reflected from the object and configured to convert the polarized light to electrical signals, and a control unit configured to control the light source module and sensing circuit. A camera may include a receiving lens; a sensor module configured to generate depth data, the depth data including depth information of objects based on a received light from the objects; an engine unit configured to generate a depth map of the objects based on the depth data, configured to segment the objects in the depth map, and configured to generate a control signal for controlling the receiving lens based on the segmented objects; and a motor unit configured to control focusing of the receiving lens.
摘要翻译：三维图像传感器可以包括：被配置为向对象发射至少一个光的光源模块;感测电路，被配置为使表示从物体反射的至少一个光的接收光偏振，并且被配置为将偏振光以及被配置为控制光源模块和感测电路的控制单元。相机可以包括接收透镜; 传感器模块，被配置为生成深度数据，所述深度数据包括基于来自所述对象的接收光的对象的深度信息; 发动机单元，被配置为基于所述深度数据生成所述对象的深度图，所述深度图被配置为在所述深度图中分割所述对象，并且被配置为基于所述分割对象生成用于控制所述接收透镜的控制信号; 以及被配置为控制所述接收透镜的聚焦的马达单元。

7. 发明申请

US20100140733A1 Back-side illuminated image sensor 审中-公开
标题翻译：背面照明图像传感器
公开(公告)号：US20100140733A1
公开(公告)日：2010-06-10
申请号：US12591912
申请日：2009-12-04
申请人： Yong Jei Lee , Jung Chak Ahn , Jong Eun Park , Dong-Yoon Jang
发明人： Yong Jei Lee , Jung Chak Ahn , Jong Eun Park , Dong-Yoon Jang
IPC分类号： H01L31/02
CPC分类号： H04N5/361 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.
摘要翻译：在示例性实施例中，背面照明图像传感器包括由半导体分隔开的多个光电转换装置的基板。背侧照明传感器还包括形成在基板的表面上的透明电极层或金属层。由于向透明电极层或金属层施加正偏置电压或负偏置电压，因此可以减少或抑制硅衬底的表面中的暗电流的产生。

8. 发明申请

US20080035966A1 CMOS IMAGE SENSOR AND METHOD OF DRIVING THE SAME 失效
标题翻译： CMOS图像传感器及其驱动方法
公开(公告)号：US20080035966A1
公开(公告)日：2008-02-14
申请号：US11679319
申请日：2007-02-27
申请人： Sung-In Hwang , Yong-Jei Lee , Jung-Chak Ahn , Ju-Hyun Ko
发明人： Sung-In Hwang , Yong-Jei Lee , Jung-Chak Ahn , Ju-Hyun Ko
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14609 , H04N5/3741 , H04N5/3745 , H04N5/37452
摘要： A complementary metal-oxide semiconductor (CMOS) image sensor and a method of driving the CMOS image sensor that can reduce the number of devices required by each of a plurality of pixels and can stably drive the pixels, in which each of the pixels includes a photodiode that converts light energy into an electrical signal, a transfer transistor that transmits photocarriers stored in the photodiode to a floating diffusing region, a drive transistor that has a gate connected to the floating diffusion region and drives a voltage signal according to a voltage of the floating diffusion region, the voltage signal being output to an external device, and a capacitive device that is connected between a control voltage source and the floating diffusion region and, when a sensing operation of a corresponding pixel is terminated, deselects the pixel by altering the voltage of the floating diffusion region according to a control voltage provided by the control voltage source.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器和驱动CMOS图像传感器的方法，其可以减少多个像素中的每一个所需的器件的数量，并且可以稳定地驱动像素，其中每个像素包括将光能转换为电信号的光电二极管，将存储在光电二极管中的光载流子传输到浮动漫射区的传输晶体管，具有连接到浮动扩散区的栅极并根据所述浮动扩散区的电压驱动电压信号的驱动晶体管浮动扩散区域，电压信号被输出到外部设备;以及电容器件，其连接在控制电压源和浮动扩散区域之间，并且当相应像素的感测操作终止时，通过改变像素根据由控制电压源提供的控制电压，浮动扩散区域的电压。

9. 发明授权

US06540941B2 Green phosphor for fluorescent display and method of manufacturing the same 失效
标题翻译：荧光显示用绿色荧光体及其制造方法
公开(公告)号：US06540941B2
公开(公告)日：2003-04-01
申请号：US09775947
申请日：2001-02-02
申请人： Kyung Soo Suh , Seung Youl Kang , Jin Ho Lee , Kyoung Ik Cho , Ick Kyu Choi , Yong Jei Lee , Jae Dong Byun
发明人： Kyung Soo Suh , Seung Youl Kang , Jin Ho Lee , Kyoung Ik Cho , Ick Kyu Choi , Yong Jei Lee , Jae Dong Byun
IPC分类号： C09K1154
CPC分类号： C09K11/642
摘要： The present invention provides a green phosphor for fluorescent display having a composition represented by a chemical formula: xZnO+(2-x-y/2)Ga2O3+yAl2O3:zMn2+ where 0.8≦x
摘要翻译：本发明提供一种用于荧光显示器的绿色荧光体，其具有由以下化学式表示的组成：xZnO +（2-x-y / 2）Ga2O3 + yAl2O3：zMn2 +，其中0.8 <= x <1.0; 0

10. 发明授权

US09225922B2 Image-sensing devices and methods of operating the same 有权
标题翻译：图像感测装置及其操作方法
公开(公告)号：US09225922B2
公开(公告)日：2015-12-29
申请号：US13550838
申请日：2012-07-17
申请人： Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
发明人： Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
IPC分类号： H04N5/357 , H04N5/378 , H04N5/369 , H04N5/3745
CPC分类号： H04N5/357 , H04N5/3696 , H04N5/3745 , H04N5/378
摘要： In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.
摘要翻译：在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样，连接的。基于噪声电压和解调电压确定电压。

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