专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06815367B2 Elimination of resist footing on tera hardmask 有权
标题翻译：消除在tera硬掩模上的抵抗基础
公开(公告)号：US06815367B2
公开(公告)日：2004-11-09
申请号：US10114484
申请日：2002-04-03
申请人： Xiaochun Linda Chen
发明人： Xiaochun Linda Chen
IPC分类号： H01L21302
CPC分类号： H01L21/0332 , G03F7/091
摘要： A process of eliminating resist footing on a hardmask when preparing a semiconductor wafer stack, comprising: a) depositing a layer of hardmask material on a substrate; b) subjecting the hardmask to oxygen under conditions sufficient to produce an oxide cap layer and provide a hardmask/oxide cap layer with a substrate reflectivity below 0.8%; c) forming a layer of SiO2 on the hardmask/oxide cap layer; d) forming a layer of photoresist on the layer of SiO2; e) patterning and developing the layer of photoresist by exposing photoresist; and f) etching exposed portions of the layer of hardmask/oxide cap layer/SiO2 layer to obtain a semiconductor wafer stack with no standing waves and free from resist footing.

2. 发明授权

US06713236B2 Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer 失效
标题翻译：用于防止半导体晶片的周边区域的光刻曝光的平版印刷方法
公开(公告)号：US06713236B2
公开(公告)日：2004-03-30
申请号：US10188532
申请日：2002-07-03
申请人： Xiaochun Linda Chen
发明人： Xiaochun Linda Chen
IPC分类号： G03F726
CPC分类号： G03F7/168
摘要： A lithography method for use in the manufacture of semiconductor devices, which prevents lithographic exposure of a periphery region or edge region of a semiconductor wafer and which prevents the formation of black silicon related particle contamination in a patterned region on the periphery region as a result of, e.g., a deep trench manufacturing process. A quencher solution is applied at peripheral areas of the wafer on which a photoresist layer is formed. The quencher solution neutralizes acid generated in the photoresist when the photoresist is exposed to radiation, thereby preventing the photoresist on the peripheral region of the wafer to dissolve during a subsequent developing process.
摘要翻译：一种用于制造半导体器件的光刻方法，其防止半导体晶片的外围区域或边缘区域的光刻曝光，并且防止在外围区域上的图案化区域中形成黑色硅相关颗粒污染作为结果，例如深沟槽制造工艺。猝灭剂溶液施加在其上形成有光致抗蚀剂层的晶片的周边区域。当光致抗蚀剂暴露于辐射时，猝灭剂溶液中和光致抗蚀剂中产生的酸，从而防止在随后的显影过程中晶片周边区域上的光致抗蚀剂溶解。

3. 发明授权

US06489044B1 Process for fabricating polarized organic photonics devices, and resultant articles 有权
标题翻译：制造极化有机光子器件的方法，以及所得物品
公开(公告)号：US06489044B1
公开(公告)日：2002-12-03
申请号：US09394524
申请日：1999-09-10
申请人： Xiaochun Linda Chen , Zhenan Bao
发明人： Xiaochun Linda Chen , Zhenan Bao
IPC分类号： H05B3314
CPC分类号： H01L51/5293 , H01L51/0003 , H01L51/0038 , H01L51/0053 , H01L51/0059 , Y02E10/549 , Y02P70/521 , Y10S117/919
摘要： A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.
摘要翻译：包括LED或光伏器件的偏振有机光子学器件由涂覆有摩擦转移对准材料，光活性材料和第二导电层或电极的第一导电层或电极组成。对准材料提供随后沉积的光活性材料的取向，使得光活性材料优选沿所选偏振轴相互作用或发射光。附加层和子层优化和调整设备的光学和电子响应。

4. 发明授权

US06579564B2 Process for fabricating polarized organic photonics devices 失效
标题翻译：制造极化有机光子器件的工艺
公开(公告)号：US06579564B2
公开(公告)日：2003-06-17
申请号：US10266454
申请日：2002-10-08
申请人： Xiaochun Linda Chen , Zhenan Bao
发明人： Xiaochun Linda Chen , Zhenan Bao
IPC分类号： B05D506
CPC分类号： H01L51/5293 , H01L51/0003 , H01L51/0038 , H01L51/0053 , H01L51/0059 , Y02E10/549 , Y02P70/521 , Y10S117/919
摘要： A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.
摘要翻译：包括LED或光伏器件的偏振有机光子学器件由涂覆有摩擦转移对准材料，光活性材料和第二导电层或电极的第一导电层或电极组成。对准材料提供随后沉积的光活性材料的取向，使得光活性材料优选沿所选偏振轴相互作用或发射光。附加层和子层优化和调整设备的光学和电子响应。

5. 发明授权

US07141338B2 Sub-resolution sized assist features 有权
标题翻译：次分辨率大小的辅助功能
公开(公告)号：US07141338B2
公开(公告)日：2006-11-28
申请号：US10292169
申请日：2002-11-12
申请人： Xiaochun Linda Chen , Lawrence Varnerin , Bernhard Liegl
发明人： Xiaochun Linda Chen , Lawrence Varnerin , Bernhard Liegl
IPC分类号： G01F9/00
CPC分类号： G03F1/36
摘要： Corner rounding and image shortening is substantially reduced in an image printed on a substrate by illuminating a photolithographic mask and projecting light transmitted through the photolithographic mask onto the substrate using an optical projection system. The photolithographic mask has a mask pattern that includes at least one printable feature having at least one corner. Incorporated, in the mask pattern, is at least one line feature corresponding to the corner of the printable feature. The line feature is in at least close proximity to the corresponding corner of the printable feature and has a line width that is smaller than a minimum resolution of the optical projection system.
摘要翻译：通过照射光刻掩模并使用光学投影系统将透过光刻掩模的光投射到基板上，在印刷在基板上的图像中，角圆和图像缩短显着降低。光刻掩模具有包括至少一个具有至少一个角部的可打印特征的掩模图案。在掩模图案中并入是与可打印特征的角部相对应的至少一个线特征。线特征至少紧邻可打印特征的相应角，并且具有小于光学投影系统的最小分辨率的线宽。

6. 发明授权

US06541387B1 Process for implementation of a hardmask 有权
标题翻译：执行硬掩模的过程
公开(公告)号：US06541387B1
公开(公告)日：2003-04-01
申请号：US10052201
申请日：2002-01-17
申请人： Xiaochun Linda Chen
发明人： Xiaochun Linda Chen
IPC分类号： H01L21302
CPC分类号： H01L21/0337 , Y10S438/952
摘要： A resist layer is deposited atop a substrate and is patterned to expose portions of a substrate. A hardmask layer is deposited atop the patterned resist layer and atop the exposed portions of the substrate. The patterned resist layer is removed so that only a portion of the hardmask layer that is atop the substrate remains.
摘要翻译：抗蚀剂层沉积在衬底上方并被图案化以暴露衬底的部分。硬掩模层沉积在图案化的抗蚀剂层的顶部，并且在衬底的暴露部分的顶部。去除图案化的抗蚀剂层，使得只剩下基材顶部的硬掩模层的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式