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1. 发明申请

US20060229045A1 Tri-state RF switch 有权
公开(公告)号：US20060229045A1
公开(公告)日：2006-10-12
申请号：US11345237
申请日：2006-02-02
申请人： Hyung Choi , Jiwei Jiao , Yuelin Wang , Xianglong Xing
发明人： Hyung Choi , Jiwei Jiao , Yuelin Wang , Xianglong Xing
IPC分类号： H04B1/06
CPC分类号： H01H59/0009 , H01H2001/0042 , H01P1/127
摘要： A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.

2. 发明授权

US07477884B2 Tri-state RF switch 有权
标题翻译：三态RF开关
公开(公告)号：US07477884B2
公开(公告)日：2009-01-13
申请号：US11345237
申请日：2006-02-02
申请人： Hyung Choi , Jiwel Jiao , Yuelin Wang , Xianglong Xing
发明人： Hyung Choi , Jiwel Jiao , Yuelin Wang , Xianglong Xing
IPC分类号： H04B1/06
CPC分类号： H01H59/0009 , H01H2001/0042 , H01P1/127
摘要： A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.
摘要翻译：三态RF MEMS开关包括：形成在第一衬底中的第一阱; 第一输入信号线和第一输出信号线，其在第一阱中形成第一间隙; 在第二基板中形成第二阱和第三阱之间的边界的柱条; 第二输入信号线和第二输出信号线，以及分别在第二阱和第三阱中形成第二间隙和第三间隙的第三输入信号线和第三输出信号线; 以及膜，其设置在所述第一基板和所述第二基板之间，使得所述膜跨越所述第一，第二和第三间隙，所述膜包括第一导电焊盘，第二导电焊盘和第三导电焊盘，和第三个差距。

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