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1. 发明授权

US5198677A Production of N.sup.+ ions from a multicusp ion beam apparatus 失效
标题翻译：从多重离子束装置生产N +离子
公开(公告)号：US5198677A
公开(公告)日：1993-03-30
申请号：US774912
申请日：1991-10-11
申请人： Ka-Ngo Leung , Wulf B. Kunkel , Steven R. Walther
发明人： Ka-Ngo Leung , Wulf B. Kunkel , Steven R. Walther
IPC分类号： H01J27/14
CPC分类号： H01J27/14 , H01J2237/08 , H01J2237/31701
摘要： A method of generating a high purity (at least 98%) N.sup.+ ion beam using a multicusp ion source (10) having a chamber (11) formed by a cylindrical chamber wall (12) surrounded by a plurality of magnets (13), a filament (57) centrally disposed in said chamber, a plasma electrode (36) having an extraction orifice (41) at one end of the chamber, a magnetic filter having two parallel magnets (21, 22) spaced from said plasma electrode (36) and dividing the chamber (11) into arc discharge and extraction regions. The method includes ionizing nitrogen gas in the arc discharge region of the chamber (11), maintaining the chamber wall (12) at a positive voltage relative to the filament (57) and at a magnitude for an optimum percentage of N.sup.+ ions in the extracted ion beams, disposing a hot liner (45) within the chamber and near the chamber wall (12) to limit recombination of N.sup.+ ions into the N.sub.2.sup.+ ions, spacing the magnets (21, 22) of the magnetic filter from each other for optimum percentage of N.sup.3 ions in the extracted ion beams, and maintaining a relatively low pressure downstream of the extraction orifice and of a magnitude (preferably within the range of 3-8.times.10.sup.-4 torr) for an optimum percentage of N.sup.+ ions in the extracted ion beam.
摘要翻译：使用具有由多个磁体（13）包围的圆柱形室壁（12）形成的室（11）的多重离子源（10）产生高纯度（至少98％）的N +离子束的方法，中心设置在所述室中的灯丝（57），具有在所述室的一端处的提取孔（41）的等离子体电极（36），具有与所述等离子体电极（36）间隔开的两个平行磁体（21,22）的磁性过滤器，并将室（11）分割成电弧放电和提取区域。该方法包括在室（11）的电弧放电区域中离子化氮气，将室壁（12）保持在相对于灯丝（57）的正电压并且处于提取的N +离子的最佳百分比的量级离子束，在室内和室壁附近设置热衬里（45）以限制N +离子复合到N 2 +离子中，使磁性过滤器的磁体（21,22）彼此间隔，以获得最佳百分比在提取的离子束中保持N 3离子，并且在提取孔的下游保持相对较低的压力，并且在提取的离子束中的N +离子的最佳百分比（优选在3-8×10 -4乇的范围内）。

2. 发明授权

US5136171A Charge neutralization apparatus for ion implantation system 失效
标题翻译：离子注入系统的电荷中和装置
公开(公告)号：US5136171A
公开(公告)日：1992-08-04
申请号：US646361
申请日：1991-01-25
申请人： Ka-Ngo Leung , Wulf B. Kunkel , Malcom D. Williams , Charles M. McKenna
发明人： Ka-Ngo Leung , Wulf B. Kunkel , Malcom D. Williams , Charles M. McKenna
IPC分类号： H01J37/02 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/026
摘要： Methods and apparatus for neutralization of a workpiece such as a semiconductor wafer in a system wherein a beam of positive ions is applied to the workpiece. The apparatus includes an electron source for generating an electron beam and a magnetic assembly for generating a magnetic field for guiding the electron beam to the workpiece. The electron beam path preferably includes a first section between the electron source and the ion beam and a second section which is coincident with the ion beam. The magnetic assembly generates an axial component of magnetic field along the electron beam path. The magnetic assembly also generates a transverse component of the magnetic field in an elbow region between the first and second sections of the electron beam path. The electron source preferably includes a large area lanthanum hexaboride cathode and an extraction grid positioned in close proximity to the cathode. The apparatus provides a high current, low energy electron beam for neutralizing charge buildup on the workpiece.
摘要翻译：用于在其中将正离子束施加到工件的系统中的诸如半导体晶片的工件的方法和装置。该装置包括用于产生电子束的电子源和用于产生用于将电子束引导到工件的磁场的磁性组件。电子束路径优选地包括电子源和离子束之间的第一部分和与离子束重合的第二部分。磁性组件沿着电子束路径产生磁场的轴向分量。磁性组件还在电子束路径的第一和第二部分之间的肘部区域中产生磁场的横向分量。电子源优选包括大面积六硼化镧阴极和靠近阴极定位的提取栅格。该装置提供高电流，低能量的电子束，用于中和工件上的电荷积累。

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