专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08455362B2 Chemical mechanical polishing method 有权
标题翻译：化学机械抛光方法
公开(公告)号：US08455362B2
公开(公告)日：2013-06-04
申请号：US13253947
申请日：2011-10-05
申请人： Feng Zhao , Wufeng Deng , Jingmin Zhao , Feng Chen , Chunliang Liu
发明人： Feng Zhao , Wufeng Deng , Jingmin Zhao , Feng Chen , Chunliang Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , H01L21/02074 , H01L21/7684
摘要： A chemical mechanical polishing method includes providing a device layer having a surface to be polished, polishing the surface using an alkaline grinding slurry, removing a residual layer that is been formed on the polished surface using an acid buffer, forming a passivation layer covering the polished surface of the device layer after the residual layer has been removed, and cleaning the passivation layer using deionized water. A semiconductor device thus fabricated has surfaces with excellent flatness, good manufacturing yield and long-term reliability.
摘要翻译：化学机械抛光方法包括提供具有待抛光表面的器件层，使用碱性研磨浆料抛光表面，使用酸性缓冲液去除在抛光表面上形成的残留层，形成覆盖抛光的钝化层去除残留层后的器件层的表面，并使用去离子水清洗钝化层。如此制造的半导体器件具有优异的平坦度，良好的制造成品率和长期可靠性的表面。

2. 发明申请

US20120244706A1 CHEMICAL MECHANICAL POLISHING METHOD 有权
标题翻译：化学机械抛光方法
公开(公告)号：US20120244706A1
公开(公告)日：2012-09-27
申请号：US13253947
申请日：2011-10-05
申请人： Feng ZHAO , Wufeng DENG , Jingmin ZHAO , Feng CHEN , Chunliang LIU
发明人： Feng ZHAO , Wufeng DENG , Jingmin ZHAO , Feng CHEN , Chunliang LIU
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , H01L21/02074 , H01L21/7684
摘要： A chemical mechanical polishing method includes providing a device layer having a surface to be polished, polishing the surface using an alkaline grinding slurry, removing a residual layer that is been formed on the polished surface using an acid buffer, forming a passivation layer covering the polished surface of the device layer after the residual layer has been removed, and cleaning the passivation layer using deionized water. A semiconductor device thus fabricated has surfaces with excellent flatness, good manufacturing yield and long-term reliability.
摘要翻译：化学机械抛光方法包括提供具有待抛光表面的器件层，使用碱性研磨浆料抛光表面，使用酸性缓冲液去除在抛光表面上形成的残留层，形成覆盖抛光的钝化层去除残留层后的器件层的表面，并使用去离子水清洗钝化层。如此制造的半导体器件具有优异的平坦度，良好的制造成品率和长期可靠性的表面。

3. 发明申请

US20120196443A1 CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
标题翻译：化学机械抛光方法
公开(公告)号：US20120196443A1
公开(公告)日：2012-08-02
申请号：US13272197
申请日：2011-10-12
申请人： WUFENG DENG
发明人： WUFENG DENG
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , H01L21/02074 , H01L21/31053 , H01L21/76819 , H01L21/7684
摘要： A Chemical Mechanical Polishing (CMP) method includes providing a semiconductor substrate having an overlying dielectric layer, performing a first grinding on the dielectric layer, wherein the first grinding produces organic residues on a surface of the dielectric layer after the first grinding. The method further includes performing a second grinding on the dielectric layer by using an alkaline solution to remove the organic residues on the surface of the dielectric layer. The organic residues remaining on the surface of the dielectric layer are removed by using the alkaline solution after the first grinding process is performed. The method additionally includes cleaning a grinding pad and the substrate using deionized water.
摘要翻译：化学机械抛光（CMP）方法包括提供具有上覆电介质层的半导体衬底，在电介质层上进行第一次研磨，其中第一研磨在第一次研磨之后在电介质层的表面上产生有机残留物。该方法还包括通过使用碱性溶液来除去介电层表面上的有机残留物，在介电层上进行第二次研磨。在进行第一次研磨处理后，通过使用碱性溶液除去留在电介质层表面的有机残留物。该方法还包括使用去离子水清洁研磨垫和基底。

4. 发明申请

US20120196442A1 CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
标题翻译：化学机械抛光方法
公开(公告)号：US20120196442A1
公开(公告)日：2012-08-02
申请号：US13244173
申请日：2011-09-23
申请人： WUFENG DENG
发明人： WUFENG DENG
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , H01L21/7684
摘要： A chemical mechanical polishing method includes providing a semiconductor substrate having a dielectric layer formed thereon, wherein the dielectric layer includes vias and/or grooves, forming a stop layer on the dielectric layer and on sidewalls and bottoms of the vias and/or grooves; forming a metal layer on the stop layer, which completely fills the vias and/or grooves. The method further includes grinding the metal layer until the stop layer is exposed, removing a portion of the stop layer with a first grinding slurry, and removing the stop layer left over with a second grinding slurry until the dielectric layer is exposed, wherein a quantity and a diameter of oxide grinding particles in the second grinding slurry are smaller than those in the first grinding slurry. The method guarantees a removal rate that is equal to conventional art and prevents damage to the wafer so that the products thus made have an improved quality and performance.
摘要翻译：化学机械抛光方法包括提供其上形成有电介质层的半导体衬底，其中所述电介质层包括通孔和/或沟槽，在所述电介质层上以及所述通孔和/或沟槽的侧壁和底部上形成停止层; 在停止层上形成完全填充通路和/或沟槽的金属层。该方法还包括研磨金属层，直到停止层暴露，用第一研磨浆料除去一部分停止层，并且用第二研磨浆料除去留下的停止层，直到介电层露出，并且第二研磨浆料中的氧化物研磨颗粒的直径小于第一研磨浆料中的氧化物研磨颗粒的直径。该方法确保了与常规技术相同的去除速率，并且防止对晶片的损坏，使得由此制成的产品具有改进的质量和性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式