专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150156169A1 METHOD FOR DETERMINING VALIDITY OF COMMAND AND SYSTEM THEREOF 审中-公开
标题翻译：用于确定命令有效性的方法及其系统
公开(公告)号：US20150156169A1
公开(公告)日：2015-06-04
申请号：US14532662
申请日：2014-11-04
申请人： Jung Soo HA , Jung Su KIM , Woo-Sung LEE
发明人： Jung Soo HA , Jung Su KIM , Woo-Sung LEE
IPC分类号： H04L29/12
CPC分类号： H04L61/6068 , G06F17/30887
摘要： Disclosed are method and system for determining the validity of a command line, comprising the steps of: maintaining a first IP address database including first IP address information or at least one terminal specification information associated with the first IP address information, in which the first IP address information includes IP address information of a proxy server or that of a terminal using a dynamic IP address; receiving a command line from a terminal of a user; extracting a request content, second IP address information, or second terminal specification information included in the command line; generating log information including the request content, the second IP address information, the second terminal specification information or input time point information with respect to the input time point of the command line recording the log information associated with the command line in a log database; identifying the terminal by referring to the first IP address database and the log database; and determining the validity of the command line in association with the identified terminal.
摘要翻译：公开了用于确定命令行的有效性的方法和系统，包括以下步骤：维护包括第一IP地址信息或与第一IP地址信息相关联的至少一个终端规范信息的第一IP地址数据库，其中第一IP 地址信息包括代理服务器的IP地址信息或使用动态IP地址的终端的IP地址信息; 从用户的终端接收命令行; 提取包括在命令行中的请求内容，第二IP地址信息或第二终端指定信息; 生成关于记录与日志数据库中的命令行相关联的日志信息的命令行的输入时间点的请求内容，第二IP地址信息，第二终端指定信息或输入时间点信息的日志信息; 通过参考第一IP地址数据库和日志数据库来识别终端; 并且与所识别的终端相关联地确定命令行的有效性。

2. 发明授权

US08909795B2 Method for determining validity of command and system thereof 有权
标题翻译：确定命令有效性的方法及其系统
公开(公告)号：US08909795B2
公开(公告)日：2014-12-09
申请号：US11570236
申请日：2005-06-08
申请人： Jung Soo Ha , Jung Su Kim , Woo Sung Lee
发明人： Jung Soo Ha , Jung Su Kim , Woo Sung Lee
IPC分类号： G06F17/30
CPC分类号： H04L61/6068 , G06F17/30887
摘要： Disclosed are method and system for determining the validity of a command line, comprising the steps of: maintaining a first IP address database including first IP address information or at least one terminal specification information associated with the first IP address information, in which the first IP address information includes IP address information of a proxy server or that of a terminal using a dynamic IP address; receiving a command line from a terminal of a user; extracting a request content, second IP address information, or second terminal specification information included in the command line; generating log information including the request content, the second IP address information, the second terminal specification information or input time point information with respect to the input time point of the command line; recording the log information associated with the command line in a log database; identifying the terminal by referring to the first IP address database and the log database; and determining the validity of the command line in association with the identified terminal.
摘要翻译：公开了用于确定命令行的有效性的方法和系统，包括以下步骤：维护包括第一IP地址信息或与第一IP地址信息相关联的至少一个终端规范信息的第一IP地址数据库，其中第一IP 地址信息包括代理服务器的IP地址信息或使用动态IP地址的终端的IP地址信息; 从用户的终端接收命令行; 提取包括在命令行中的请求内容，第二IP地址信息或第二终端指定信息; 相对于命令行的输入时间点生成包括请求内容，第二IP地址信息，第二终端指定信息或输入时间点信息的日志信息; 将与命令行相关联的日志信息记录在日志数据库中; 通过参考第一IP地址数据库和日志数据库来识别终端; 并且与所识别的终端相关联地确定命令行的有效性。

3. 发明授权

US08680750B2 Piezoelectric power generator for feeding emergency power 有权
标题翻译：用于喂养应急电源的压电发电机
公开(公告)号：US08680750B2
公开(公告)日：2014-03-25
申请号：US13074277
申请日：2011-03-29
申请人： Hyung Won Kang , Hyeung-Gyu Lee , Woo Sung Lee , Seung Ho Han , Chan Sei Yoo , Hwi Yeol Park
发明人： Hyung Won Kang , Hyeung-Gyu Lee , Woo Sung Lee , Seung Ho Han , Chan Sei Yoo , Hwi Yeol Park
IPC分类号： H02N2/18 , H01L41/113
CPC分类号： H02N2/186 , H01L41/113
摘要： A piezoelectric power generator for feeding emergency power, includes a frame; a fixing unit comprising a left fixing body coupled to an upper left side of the frame and a right fixing body coupled to an upper right part of the frame; a first piezoelectric body bonded to a right side of the left fixing body; a second piezoelectric body bonded to a left side of the right fixing body; and a vibration unit bonded between the first piezoelectric body and the second piezoelectric body and vibrating vertically.
摘要翻译：一种用于馈送应急电力的压电发电机，包括一个框架; 固定单元，其包括联接到所述框架的左上侧的左固定体和联接到所述框架的右上部的右固定体; 结合到左侧固定体的右侧的第一压电体; 结合到右固定体的左侧的第二压电体; 以及振动单元，其接合在所述第一压电体和所述第二压电体之间并且垂直振动。

4. 发明授权

US08659069B2 Gate structures 有权
标题翻译：门结构
公开(公告)号：US08659069B2
公开(公告)日：2014-02-25
申请号：US13340968
申请日：2011-12-30
申请人： Jung-Hwan Kim , Sung-Ho Heo , Jae-Ho Choi , Hun-Hyeong Lim , Ki-Hyun Hwang , Woo-Sung Lee
发明人： Jung-Hwan Kim , Sung-Ho Heo , Jae-Ho Choi , Hun-Hyeong Lim , Ki-Hyun Hwang , Woo-Sung Lee
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11531
摘要： A method of forming a gate structure includes forming a tunnel insulation layer pattern on a substrate, forming a floating gate on the tunnel insulation layer pattern, forming a dielectric layer pattern on the floating gate, the dielectric layer pattern including a first oxide layer pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern, the second oxide layer pattern being formed by performing an anisotropic plasma oxidation process on the nitride layer, such that a first portion of the second oxide layer pattern on a top surface of the floating gate has a larger thickness than a second portion of the second oxide layer pattern on a sidewall of the floating gate, and forming a control gate on the second oxide layer.
摘要翻译：形成栅极结构的方法包括在衬底上形成隧道绝缘层图案，在隧道绝缘层图案上形成浮栅，在浮栅上形成电介质层图案，电介质层图案包括第一氧化物层图案，所述第一氧化物层图案上的氮化物层图案和所述氮化物层图案上的第二氧化物层图案，所述第二氧化物层图案通过在所述氮化物层上进行各向异性等离子体氧化处理而形成，使得所述第二氧化物层图案的第二部分在浮置栅极的顶表面上的氧化物层图案具有比浮置栅极的侧壁上的第二氧化物层图案的第二部分更大的厚度，并且在第二氧化物层上形成控制栅极。

5. 发明授权

US07801892B2 System and method for selecting search listing in an internet search engine and ordering the search listings 有权
标题翻译：用于在互联网搜索引擎中选择搜索列表并排序搜索列表的系统和方法
公开(公告)号：US07801892B2
公开(公告)日：2010-09-21
申请号：US11568011
申请日：2005-04-18
申请人： Woo Sung Lee , Ra Young Yang
发明人： Woo Sung Lee , Ra Young Yang
IPC分类号： G06F17/30
CPC分类号： G06Q30/00 , G06Q30/0249 , G06Q30/0251 , G06Q30/0256 , G06Q30/0272 , G06Q30/0273
摘要： Provided is a keyword advertising system extracting search listings in response to a search request, the system comprising: an interface receiving bid price information corresponding to a keyword from an advertiser; a search information database storing search listings associated with the advertisers in association with each of the received bid price information; a ranking module generating a search result list by referring to the search information database, in response to a search request from a searcher; and a search results providing module providing the searcher with the generated search result list; wherein the ranking module generates the search result list by performing the steps of: identifying a keyword received from the searcher in association with the search request; selecting N of search listings from the at least one search result listing corresponding to the identified keyword, based on the bid price information; and ordering the selected search listings in order of click through rate.
摘要翻译：提供了响应于搜索请求提取搜索列表的关键字广告系统，该系统包括：接收对应于来自广告主的关键字的投标价格信息的界面; 搜索信息数据库，存储与每个所接收的投标价格信息相关联的与广告商相关联的搜索列表; 响应于来自搜索者的搜索请求，通过参考搜索信息数据库生成搜索结果列表的排序模块; 以及搜索结果提供模块，为搜索者提供所生成的搜索结果列表; 其中所述排序模块通过执行以下步骤生成所述搜索结果列表：与所述搜索请求相关联地识别从所述搜索者接收的关键字; 基于所述投标价格信息，从与所识别的关键字相对应的所述至少一个搜索结果列表中选择搜索列表中的N个; 并按点击率顺序排列所选的搜索列表。

6. 发明授权

US07616080B2 Bandpass filter 有权
标题翻译：带通滤波器
公开(公告)号：US07616080B2
公开(公告)日：2009-11-10
申请号：US11515305
申请日：2006-09-01
申请人： Chan-sei Yoo , Woo-sung Lee , Dongsu Kim , Nam-kee Kang , Jong-chul Park
发明人： Chan-sei Yoo , Woo-sung Lee , Dongsu Kim , Nam-kee Kang , Jong-chul Park
IPC分类号： H01P1/203
CPC分类号： H01P1/20381 , H01P1/2039
摘要： A bandpass filter (BPF) configured in 3-D structures for filtering signals of ultra wide bands is disclosed, the BPF comprising sequentially stacked first to fourth dielectric substrates, wherein the first dielectric substrate is formed at a bottom surface thereof with a first ground pattern, the second dielectric substrate is formed at an upper surface thereof with a second ground pattern, and a stripline pattern is formed between the first and second dielectric substrates. The fourth dielectric substrate is formed thereon with a filter pattern and input/output coupled line patterns.
摘要翻译：公开了一种用于滤波超宽带信号的3-D结构的带通滤波器（BPF），BPF包括顺序堆叠的第一至第四电介质基板，其中第一电介质基板在其底表面处形成有第一接地图案第二电介质基板在其上表面形成有第二接地图案，并且在第一和第二电介质基板之间形成带状线图形。第四电介质基板在其上形成有滤波器图案和输入/输出耦合线图案。

7. 发明授权

US07571155B2 System and method for generating a search result list 有权
标题翻译：用于生成搜索结果列表的系统和方法
公开(公告)号：US07571155B2
公开(公告)日：2009-08-04
申请号：US10537935
申请日：2003-11-27
申请人： Kyung Lak Choi , Joon Hong , Woo Sung Lee , Sang Keun Lee , Jin Soo Lim
发明人： Kyung Lak Choi , Joon Hong , Woo Sung Lee , Sang Keun Lee , Jin Soo Lim
IPC分类号： G06F17/30 , G06F7/60
CPC分类号： G06Q10/10 , G06Q40/04 , Y10S707/99931 , Y10S707/99933
摘要： The present invention relates to a system and method for generating a search result list in response to a search request through a communication network. A method for generating a search list according to the present invention comprises the steps of selling keywords associated with predetermined search list order display methods through a tender, maintaining a database including a plurality of search list orders, receiving the search request from a searcher, identifying the search list orders associated with the keywords corresponding to the search request, and arranging at least a portion of the search list orders according to the predetermined search list order display methods. According to the present invention, a purchase competition for a particular keyword is mitigated and selling prices for keywords can be determined at a proper level.
摘要翻译：本发明涉及一种响应于通过通信网络的搜索请求产生搜索结果列表的系统和方法。根据本发明的用于生成搜索列表的方法包括以下步骤：通过招标销售与预定搜索列表顺序显示方法相关联的关键词，维护包括多个搜索列表顺序的数据库，从搜索者接收搜索请求，识别与与搜索请求对应的关键词相关联的搜索列表顺序，以及根据预定搜索列表顺序显示方法来排列搜索列表顺序的至少一部分。根据本发明，减轻了特定关键词的购买竞争，并且可以在适当的水平上确定关键字的销售价格。

8. 发明申请

US20080054400A1 Capacitor and method of manufacturing the same 审中-公开
标题翻译：电容器及其制造方法
公开(公告)号：US20080054400A1
公开(公告)日：2008-03-06
申请号：US11878698
申请日：2007-07-26
申请人： Woo-Sung Lee , Hong-Bum Park , Hyun-Jin Shin , Jong-Bom Seo
发明人： Woo-Sung Lee , Hong-Bum Park , Hyun-Jin Shin , Jong-Bom Seo
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/91 , H01L27/10814 , H01L27/10852
摘要： Example embodiments relate to a capacitor including p-type doped silicon germanium and a method of manufacturing the capacitor. The capacitor may include a lower electrode, a dielectric layer, an upper electrode, a barrier layer and a capping layer. The lower electrode may have a cylindrical shape. The dielectric layer may be on the lower electrode. The dielectric layer may have a uniform thickness. The upper electrode may be on the dielectric layer. The upper electrode may have a more uniform thickness. The capping layer may be on the upper electrode. The capping layer may include a silicon germanium layer doped with p-type impurities. The barrier layer may be between the upper electrode and the capping layer to prevent (or reduce) the p-type impurities from infiltrating into the dielectric layer.
摘要翻译：示例性实施例涉及包括p型掺杂硅锗的电容器和制造电容器的方法。电容器可以包括下电极，电介质层，上电极，阻挡层和封盖层。下部电极可以具有圆筒形状。电介质层可以在下电极上。介电层可以具有均匀的厚度。上电极可以在电介质层上。上部电极可以具有更均匀的厚度。覆盖层可以在上电极上。覆盖层可以包括掺杂有p型杂质的硅锗层。阻挡层可以在上电极和覆盖层之间，以防止（或减少）p型杂质渗透到电介质层中。

9. 发明授权

US06534400B2 Method for depositing a tungsten silicide layer 有权
标题翻译：沉积硅化钨层的方法
公开(公告)号：US06534400B2
公开(公告)日：2003-03-18
申请号：US10039165
申请日：2002-01-03
申请人： Jae Young Ahn , Woo Sung Lee , Man Sug Kang , Hee Seok Kim
发明人： Jae Young Ahn , Woo Sung Lee , Man Sug Kang , Hee Seok Kim
IPC分类号： H01L214763
CPC分类号： C23C16/0218 , C23C16/42 , H01L21/28061 , H01L21/28518 , H01L21/28556 , H01L21/32051 , H01L27/10891 , H01L29/4925
摘要： Disclosed is a method for depositing a tungsten silicide layer on a wafer coated with a polysilicon layer in a CVD process chamber. A surface of the polysilicon layer is pre-treated by introducing a hydrogen compound gas including any elements among group III elements or group V elements of the periodic table into the CVD process chamber. The tungsten silicide layer is deposited on the polysilicon layer by introducing a silane source gas and a tungsten source gas into the CVD process chamber. Since the surface of the polysilicon layer is pre-treated using the hydrogen compound gas before the tungsten silicide layer is deposited on the polysilicon layer, void generation is prevented on an interfacial surface between the tungsten silicide layer and the polysilicon layer.
摘要翻译：公开了一种在CVD处理室中在涂覆有多晶硅层的晶片上沉积硅化钨层的方法。通过将包括元素周期表的III族元素或V族元素中的任何元素的氢化合物气体引入CVD处理室来预处理多晶硅层的表面。通过将硅烷源气体和钨源气体引入CVD处理室，将硅化钨层沉积在多晶硅层上。由于在硅化钨层沉积在多晶硅层之前，使用氢化合物气体来预处理多晶硅层的表面，所以在硅化钨层和多晶硅层之间的界面表面上防止产生空隙。

10. 发明申请

US20150099353A1 Non-Volatile Memory Devices and Methods of Manufacturing the Same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20150099353A1
公开(公告)日：2015-04-09
申请号：US14568653
申请日：2014-12-12
申请人： Jung-Geun JEE , Seok-Hoon KIM , Su-Jin SHIN , Woo-Sung LEE , Tae-Ouk KWON
发明人： Jung-Geun JEE , Seok-Hoon KIM , Su-Jin SHIN , Woo-Sung LEE , Tae-Ouk KWON
IPC分类号： H01L27/115 , H01L21/28
CPC分类号： H01L27/11558 , H01L21/2807 , H01L21/28273 , H01L21/28556 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/66825 , H01L29/7881
摘要： A non-volatile memory device includes a field region that defines an active region in a semiconductor substrate, a floating gate pattern on the active region, a dielectric layer on the floating gate pattern and a control gate on the dielectric layer. The control gate includes a first conductive pattern that has a first composition that crystallizes in a first temperature range, and a second conductive pattern that has a second composition that is different from the first composition and that crystallizes in a second temperature range that is lower than the first temperature range, the first conductive pattern being between the dielectric layer and the second conductive pattern.
摘要翻译：非易失性存储器件包括限定半导体衬底中的有源区域的场区域，有源区域上的浮置栅极图案，浮置栅极图案上的介电层和介电层上的控制栅极。控制栅极包括具有在第一温度范围内结晶的第一组成的第一导电图案和具有与第一组成不同的第二组成的第二导电图案，并且在低于第一组成的第二温度范围内结晶第一温度范围，第一导电图案在介电层和第二导电图案之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式