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1. 发明授权

US4945066A Process for manufacturing a dynamic random access memory cell 失效
标题翻译：用于制造动态随机存取存储器单元的过程
公开(公告)号：US4945066A
公开(公告)日：1990-07-31
申请号：US159177
申请日：1988-02-23
申请人： Myong-Ku Kang , Byong-Hyun Park , Won-Hee Jang
发明人： Myong-Ku Kang , Byong-Hyun Park , Won-Hee Jang
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/00 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10805
摘要： A process for manufacturing a dynamic random access memory (DRAM) cell wherein an improvement is made in an occurrence of soft errors in operation of a memory device, said soft errors resulting from alpha particles being produced from uranium-series materials included in fabricating materials during fabrication of memory chips, especially in the package of the chip. In a single transistor memory cell, through forming boron layers below a storage capacitor region and below a drain region of the transistor coupled with a bit line, a barrier is formed against the minority carriers resulting from the alpha particles within the substrate. Also, through enlarging the storage capacitor region toward a field oxide layer just around the capacitor perimeter, a capacitance of the storage capacitor is increased so that the influence of the soft errors is negligible.
摘要翻译：一种用于制造动态随机存取存储器（DRAM）单元的方法，其中在存储器件的操作中发生软错误时发生改善，所述软件错误是由包括在制造材料中的铀系列材料产生的α粒子产生的内存芯片的制造，特别是芯片的封装。在单个晶体管存储单元中，通过在存储电容器区域下面形成硼层并且在与位线连接的晶体管的漏极区域之下形成硼层，由衬底内的α粒子形成抵靠少数载流子的势垒。此外，通过将存储电容器区域朝着围绕电容器周边的场氧化物层扩大，存储电容器的电容增加，使得软误差的影响可以忽略不计。

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