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    • 3. 发明申请
    • MEMS device and interposer and method for integrating MEMS device and interposer
    • 用于集成MEMS器件和插入器的MEMS器件和插入器和方法
    • US20050037534A1
    • 2005-02-17
    • US10889868
    • 2004-07-13
    • William Sawyer
    • William Sawyer
    • H01L21/00
    • B81B7/0048B81B2203/0307
    • A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.
    • 使用绝缘体上硅(SOI)晶片制造微机电系统(MEMS)和相关器件的方法包括提供SOI晶片,执行台面蚀刻以至少部分限定MEMS器件,通过直接将SOI晶片连接到插入器 去除SOI晶片的手柄层,去除SOI晶片的氧化物层,并进一步蚀刻SOI晶片的器件层以限定MEMS器件。 根据上述工艺制造的结构包括内插器,其包括安装在插入件上的SOI晶片和MEMS器件。 MEMS器件包括从硅板延伸的柱。 MEMS器件通过将MEMS器件的柱结合到插入器的器件层而直接安装到插入器。