专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6102267A Method and apparatus for non-contact pulsating jet cleaving of a semiconductor material 有权
标题翻译：用于半导体材料的非接触脉动喷射裂开的方法和装置
公开(公告)号：US6102267A
公开(公告)日：2000-08-15
申请号：US208768
申请日：1998-12-10
申请人： Joseph Michael Freund , William Andrew Gault , George John Przybylek , Dennis Mark Romero , John William Stayt, Jr.
发明人： Joseph Michael Freund , William Andrew Gault , George John Przybylek , Dennis Mark Romero , John William Stayt, Jr.
IPC分类号： B28D5/00 , H01L21/00 , H01L21/301 , H01L21/78 , H01L21/46
CPC分类号： H01L21/67092 , B28D5/0011 , B28D5/0052 , H01L21/78
摘要： An apparatus and a method for non-contact cleaving a brittle, non-metallic solid material, such as semiconductor material, glass, quartz, ceramic or like material. A pulsating gas jet directs a jet of gas toward a support structure formed of a non-compliant material. The semiconductor material is positioned on the support structure between a pair of film layers. The semiconductor material is scored in at least one location on the material. A plastic buffer material is adhered to the support structure. The semiconductor material and the film layers are moved along the support structure until the score line is at a ledge of the support structure and underneath the source of gas. The jet of gas applies a sufficient force to cleave the semiconductor material as it passes off the ledge of the support structure, while minimizing vibration and/or turbulence. The buffer provides cushioning and inhibits the formation of fractures during the cleaving process.
摘要翻译：用于非接触地切割脆性非金属固体材料如半导体材料，玻璃，石英，陶瓷或类似材料的装置和方法。脉动气体喷射器将气体射流引向由不顺从材料形成的支撑结构。半导体材料位于一对薄膜层之间的支撑结构上。半导体材料在材料上的至少一个位置上刻痕。塑料缓冲材料粘附到支撑结构上。半导体材料和薄膜层沿着支撑结构移动，直到刻痕线处于支撑结构的凸缘并在气体源的下方。气体射流施加足够的力以在半导体材料离开支撑结构的突出部分时切割半导体材料，同时最小化振动和/或湍流。缓冲液提供缓冲，并在劈裂过程中抑制骨折的形成。

2. 发明授权

US4083748A Method of forming and growing a single crystal of a semiconductor compound 失效
标题翻译：形成和生长半导体化合物的单晶的方法
公开(公告)号：US4083748A
公开(公告)日：1978-04-11
申请号：US627319
申请日：1975-10-30
申请人： William Andrew Gault
发明人： William Andrew Gault
IPC分类号： C08G18/00 , C08G18/48 , C08G18/50 , C08G65/00 , C08G65/32 , C30B11/00 , C30B11/06 , C30B11/14 , C30B27/00 , C30B29/40 , C30B29/48 , B01J17/20 , B01J17/22 , C01G15/00
CPC分类号： C30B11/14 , C30B11/06
摘要： A method of forming and growing a single crystal of a semiconductor compound comprising a Group II-VI or Group III-V compound is disclosed. The method comprises placing a single crystal seed of the semiconductor compound adjacent to a first reactant comprising a Group II or Group III element. A protective blanket, resulting from at least a second reactant of a Group VI or Group V element, is formed over the seed within a temperature zone to protect the seed from dissolution by the first reactant. The reactants are combined to form a melt at a first temperature within the temperature zone and to grow a single crystal from the melt on the seed at a second temperature within the temperature zone.
摘要翻译：公开了一种形成和生长包含II-VI族或III-V族化合物的半导体化合物的单晶的方法。该方法包括将半导体化合物的单晶种子与包含第II族或第III族元素的第一反应物相邻。在温度区内在种子上形成由VI族或V族元素的至少第二种反应物产生的保护层，以保护种子免受第一反应物的溶解。将所述反应物组合以在所述温度区内的第一温度下形成熔体并且在所述温度区内的第二温度下从所述晶种上的熔体生长单晶。

3. 发明授权

US3957954A High-temperature reaction method for producing group II-VI or a group III-V compound 失效
标题翻译：用于生产II-VI族或III-V族化合物的高温反应方法
公开(公告)号：US3957954A
公开(公告)日：1976-05-18
申请号：US519482
申请日：1974-10-30
申请人： William Andrew Gault
发明人： William Andrew Gault
IPC分类号： B01J12/00 , B01J19/08 , C01B19/00 , C01B25/06 , C01G1/12 , C01B25/00 , C01B17/00
CPC分类号： C01G1/12 , B01J12/005 , B01J19/087 , C01B19/007 , C01B25/06 , Y10S420/903
摘要： A high-temperature reaction method is disclosed. The method comprises coupling an inductive heating coil to the contents of a reaction vessel, containing at least one conductive reactant with a coupling efficiency that is different than the coupling efficiency between the coil and the contents of the reaction vessel at the completion of the reaction. An alternating voltage is developed across the coil and the current flowing in the coil is monitored. Typically, the monitored current increases as the reaction proceeds until the reaction is completed whereupon a constant current value is obtained.
摘要翻译：公开了一种高温反应方法。该方法包括将感应加热线圈耦合到反应容器的内容物中，该反应容器的内容物含有至少一种导电反应物，其偶合效率不同于反应完成时线圈与反应容器内容物之间的耦合效率。跨线圈产生交流电压，并监测线圈中流动的电流。通常，监测的电流随反应进行直到反应完成，随后得到恒定电流值。

4. 发明授权

US6074934A Apparatus for cleaving laser bars 有权
标题翻译：用于切割激光棒的设备
公开(公告)号：US6074934A
公开(公告)日：2000-06-13
申请号：US196956
申请日：1998-11-20
申请人： Mindaugas Fernand Dautartas , Joseph Michael Freund , William Andrew Gault , John Michael Geary , George John Przybylek , Dennis Mark Romero
发明人： Mindaugas Fernand Dautartas , Joseph Michael Freund , William Andrew Gault , John Michael Geary , George John Przybylek , Dennis Mark Romero
IPC分类号： H01S5/02 , H01L21/46
CPC分类号： H01S5/0201 , H01S5/0202
摘要： A method and apparatus are provided for automated cleaving of semiconductor laser bars into laser devices. The structures to be cleaved are sandwiched between two sheets of plastic film and, while supported on a stabilizing surface, are transported between the sheets in a direction perpendicular to scribe marks defining the sides of the laser devices. At one point, the film sheets with the structures between them pass over a raised breaker assembly on the stabilizing surface. A high pressure air source above the breaker assembly provides a blast of air towards each film sheet enclosed structure as it passes over the breaker assembly. This causes the structure to fracture or cleave along the scribe line. As the film sheet pass over the breaker assembly, the structure is cleaved at each successive scribe line. Thus, downstream of the breaker assembly, there are provided a series of separated devices between the two film sheets. Moreover, there is no possibility that the devices will be displaced as a result of any air currents, since they are securely retained between the two film sheets.
摘要翻译：提供了用于将半导体激光棒自动分裂成激光器件的方法和装置。要被切割的结构被夹在两片塑料膜之间，并且在支撑在稳定表面上时，在垂直于限定激光装置的侧面的划线标记的方向在片材之间传送。一方面，具有它们之间的结构的薄膜片通过稳定表面上的升高的断路器组件。断路器组件上方的高压空气源在其穿过断路器组件时向每个膜片封闭结构提供空气。这导致结构沿着划线断裂或切割。当膜片通过断路器组件时，在每个连续的划线处将结构切断。因此，在断路器组件的下游，在两个薄膜片之间提供了一系列分离的装置。此外，由于它们被牢固地保持在两个薄膜片之间，因此任何气流都不会使装置发生位移。

5. 发明授权

US06267282B1 Method and apparatus for handling laser bars 有权
标题翻译：用于处理激光棒的方法和装置
公开(公告)号：US06267282B1
公开(公告)日：2001-07-31
申请号：US09285009
申请日：1999-04-01
申请人： Joseph Michael Freund , William Andrew Gault , George John Przybylek , Dennis Mark Romero , John William Stayt, Jr.
发明人： Joseph Michael Freund , William Andrew Gault , George John Przybylek , Dennis Mark Romero , John William Stayt, Jr.
IPC分类号： B26F300
CPC分类号： B28D5/0052 , B28D5/0011 , B28D5/0023 , H01L21/78 , H01S5/0201 , H01S5/028 , Y10T225/10 , Y10T225/12 , Y10T225/16 , Y10T225/18
摘要： An apparatus is provided for cleaving a laser bar into semiconductor chips. The apparatus includes a supporting structure on which a member slides. The apparatus also includes a pair of film layers. The laser bar is positioned between the film layers. A chamber is sealed to the top film layer. The chamber has an inlet through which gas is input. The movement of the member and the downward force caused by the buildup of gas pressure in the chamber induce cleaving of the laser bar at predetermined locations. The laser bar may have score marks at the predetermined locations to produce weak points. Pressure pulses may be coordinated with the movement of the member to break the laser bar at the desired locations.
摘要翻译：提供一种用于将激光棒切割成半导体芯片的装置。该装置包括支撑结构，构件在该支撑结构上滑动。该装置还包括一对薄膜层。激光棒位于膜层之间。一个室被密封到顶部薄膜层。该室具有输入气体的入口。构件的运动和由室内的气体压力的积聚引起的向下的力引起激光棒在预定位置的裂开。激光棒在预定位置可能具有刻痕以产生弱点。压力脉冲可以与构件的运动协调，以在期望的位置处破坏激光棒。

6. 发明授权

US06259264B1 Apparatus and method for testing semiconductor laser chips 有权
标题翻译：用于半导体激光芯片测试的装置和方法
公开(公告)号：US06259264B1
公开(公告)日：2001-07-10
申请号：US09385378
申请日：1999-08-30
申请人： Joseph Michael Freund , William Andrew Gault , John Michael Geary
发明人： Joseph Michael Freund , William Andrew Gault , John Michael Geary
IPC分类号： G01R3102
CPC分类号： G01R31/2635
摘要： An apparatus and method for performing tests on laser chips that are not labor intensive and will not result in wasted parts should the laser chip fail the test is disclosed. A “bare” laser chip is subjected to a test in accordance with one embodiment by placing the laser chip on an insulating material with an embedded conducting contact through which the current to power the laser chip is passed. A cover plate provides a channel around the laser chip through which a jet of high pressure inert gas is passed to dissipate the self-heating of the laser chip that occurs during the test process. The laser chip is kept in place by physical pressure. In accordance with another embodiment, the temperature of the laser chip is measured and a thermoelectric cooler is used to cool the laser chip. The test on the “bare” laser chip eliminates the need to solder bond the laser chip to a carrier and attach wire bonds to the laser chip, thus reducing associated labor and parts costs.
摘要翻译：本发明公开了一种不需要劳动强度的激光芯片进行试验的装置和方法，不会造成激光芯片失效。通过将激光芯片放置在具有嵌入式导电接触件的绝缘材料上，通过激光芯片供电的电流通过“裸”激光器芯片进行根据一个实施例的测试。盖板提供激光芯片周围的通道，通过该通道使高压惰性气体射流消散在测试过程中发生的激光芯片的自发热。激光芯片通过物理压力保持在适当的位置。根据另一实施例，测量激光芯片的温度，并使用热电冷却器来冷却激光芯片。在“裸”激光芯片上的测试消除了将激光芯片焊接到载体并将引线键合到激光芯片上的需要，从而减少相关的劳动力和零件成本。

7. 发明授权

US06168963A System for adhering parts 失效
标题翻译：粘贴零件系统
公开(公告)号：US06168963A
公开(公告)日：2001-01-02
申请号：US09336701
申请日：1999-06-21
申请人： Joseph Michael Freund , George John Przybylek , Dennis Mark Romero , William Andrew Gault , Ralph J. Diehl, Jr.
发明人： Joseph Michael Freund , George John Przybylek , Dennis Mark Romero , William Andrew Gault , Ralph J. Diehl, Jr.
IPC分类号： H01L2158
CPC分类号： H01S5/02 , H01L24/83 , H01L2224/83 , H01S5/028 , H01L2924/3512 , H01L2924/00
摘要： A system for adhering a plurality of parts to a support film is provided. The parts are positioned between a support base with a heater and a cover membrane. The cover membrane is located beneath a sealed chamber. The chamber has an inlet through which gas is input. A downward force caused by gas pressure in the chamber causes the cover membrane to contact the parts and presses the plurality of parts against the film. A heating device heats the film to cause the parts to adhere to the film.
摘要翻译：提供了一种用于将多个部件粘附到支撑膜上的系统。这些部件位于具有加热器的支撑基座和覆盖膜之间。覆盖膜位于密封室下方。该室具有输入气体的入口。由室内的气体压力引起的向下的力导致盖膜接触部件并将多个部件压靠在膜上。加热装置加热薄膜以使部件粘附到薄膜上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式