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1. 发明授权

US4945697A Floor tile and floor 失效
标题翻译：地砖和地板
公开(公告)号：US4945697A
公开(公告)日：1990-08-07
申请号：US187357
申请日：1988-04-28
申请人： Willibald Ott , Gunter Hoffmann , Werner Jacobs
发明人： Willibald Ott , Gunter Hoffmann , Werner Jacobs
IPC分类号： E04F15/02 , E04F15/22
CPC分类号： E04F15/02 , E04F15/22
摘要： A floor or walkway has a base and an overlay on the base. The overlay includes a plurality of prefabricated tiles each of which has an upper layer designed to contact objects on the floor or walkway and a lower layer designed to bear against the base. The upper layers are composed of a ceramic while the lower layers are composed of a resilient material having anti-skid characteristics. The upper and lower layers of each tile are adhesively secured or vulcanized to one another during manufacture of the tile. The overlay is formed by simply placing the tile on the base or loosely securing the tiles to the base by means of an adhesive. If the overlay is outdoors, the same or gaps between neighboring tiles are kept open to permit water runoff. The lower layers of the tiles are then formed with drainage channels and/or open pores for the discharge of water which has passed through the seams or gaps. The opens seams or gaps in combination with the resilience of the lower layers allows the upper layers to shift vertically relative to one another so that the overlay can adapt to irregularities in the base. If the overlay is indoors where water is of no concern, the seams or gaps between neighboring tiles may be filled. The filling is flexible in order to permit relative vertical shifting of the upper layers of the tiles.
摘要翻译：地板或人行道上有一个基地和一个覆盖在基地上。覆盖层包括多个预制瓦片，每个瓦片具有设计成接触地板或走道上的物体的上层和设计成抵靠基座的下层。上层由陶瓷构成，而下层由具有防滑特性的弹性材料构成。每个瓷砖的上层和下层在砖的制造期间被粘合地固定或硫化。通过简单地将瓦片放置在基座上或通过粘合剂将瓦片松散地固定到基座上来形成覆盖层。如果覆盖层在户外，相邻砖块之间的相同或间隙保持开放以允许水的径流。然后，瓦片的下层形成有用于排出已经通过接缝或间隙的水排出通道和/或开孔。打开的接缝或间隙与下层的弹性结合允许上层相对于彼此垂直移位，使得覆盖层可适应基部中的不规则。如果覆盖层在室内，水不必关心，相邻瓦片之间的接缝或间隙可能会被填满。填充物是柔性的，以允许瓷砖的上层的相对垂直移动。

2. 发明授权

US2770974A Device for producing reciprocating movement from rotary 失效
标题翻译：用于从旋转产生往复运动的装置
公开(公告)号：US2770974A
公开(公告)日：1956-11-20
申请号：US29361552
申请日：1952-06-14
申请人： WERNER JACOBS
发明人： WERNER JACOBS
IPC分类号： B06B1/10 , B23B25/02 , B23B29/12 , B23B47/34 , B23D13/00 , F16H25/12
CPC分类号： F16H25/125 , B06B1/10 , B23B25/02 , B23B29/12 , B23B29/125 , B23B47/34 , B23D13/00 , Y10T74/18288 , Y10T82/2572 , Y10T82/30 , Y10T409/509348

3. 发明申请

US20080085606A1 Method for Fabricating a Structure for a Semiconductor Component, and Semiconductor Component 审中-公开
标题翻译：制造半导体元件结构的方法和半导体元件
公开(公告)号：US20080085606A1
公开(公告)日：2008-04-10
申请号：US11867724
申请日：2007-10-05
申请人： Dominik Fischer , Werner Jacobs , Daniel Koehler , Alfred Kersch , Winfried Sabisch
发明人： Dominik Fischer , Werner Jacobs , Daniel Koehler , Alfred Kersch , Winfried Sabisch
IPC分类号： H01L21/461
CPC分类号： H01L21/76816 , H01L21/31144
摘要： In one aspect, the invention provides a fabrication method. Before the fabrication of the structure, a mask layer, for example a hard mask, is applied to a layer. The mask layer has at least two layers composed of materials that can be etched selectively with respect to one another. In a first etching process, the structure is introduced into the layer. Subsequently, the first etching process is interrupted at a point in time in order to etch away a topmost layer of the hard mask selectively with respect to the underlying layer by means of a second etching process and, subsequently, the first etching process is continued for fabricating the structure with the new topmost layer.
摘要翻译：一方面，本发明提供一种制造方法。在制造结构之前，将掩模层（例如硬掩模）施加到层上。掩模层具有由能够相对于彼此选择性地蚀刻的材料组成的至少两层。在第一蚀刻工艺中，将结构引入层中。随后，第一蚀刻工艺在某个时间点被中断，以便通过第二蚀刻工艺相对于下面的层选择性蚀刻掉硬掩模的最上层，并且随后继续进行第一蚀刻工艺用新的最上层制造结构。

4. 发明申请

US20090204936A1 Method of Performing Proximity Correction 审中-公开
标题翻译：执行近似校正的方法
公开(公告)号：US20090204936A1
公开(公告)日：2009-08-13
申请号：US12029280
申请日：2008-02-11
申请人： Werner Jacobs , Alfred Kersch , Christof Bodendorf
发明人： Werner Jacobs , Alfred Kersch , Christof Bodendorf
IPC分类号： G06F17/50
CPC分类号： G03F1/80 , G03F1/36
摘要： A method of performing proximity correction of a mask layout is used during the generation of a masking structure for performing a processing step. The masking structure includes at least one opening that is delimited by a sidewall and that exposes an area that is to be processed. The method includes the steps of a) determining a value representing a flux of particles to a target portion, wherein the target portion is at least one of the group of a portion of the sidewall and a portion of the uncovered area and wherein the particles are generated during the processing of the area; and b) determining a corrected mask layout dependent on the value determined in step a).
摘要翻译：在生成用于执行处理步骤的掩蔽结构期间，使用执行掩模布局的邻近度校正的方法。掩模结构包括至少一个开口，该开口由侧壁界定并且暴露要被处理的区域。该方法包括以下步骤：a）确定表示到目标部分的颗粒通量的值，其中目标部分是侧壁的一部分和未覆盖区域的一部分中的至少一个，并且其中颗粒是在该地区的加工过程中产生的; 以及b）根据步骤a）中确定的值来确定校正的掩模布局。

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