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1. 发明申请

US20130057505A1 ELECTROMAGNETIC INDUCTIVE INPUT APPARATUS 审中-公开
标题翻译：电磁感应输入装置
公开(公告)号：US20130057505A1
公开(公告)日：2013-03-07
申请号：US13432822
申请日：2012-03-28
申请人： Joe YU , Wen-Yuan HUANG
发明人： Joe YU , Wen-Yuan HUANG
IPC分类号： G06F3/046
CPC分类号： G06F3/044 , G06F3/03545 , G06F3/046
摘要： An electromagnetic inductive input apparatus includes a signal transmitting device including a signal transmitter, and a signal receiving device. The signal receiving device includes a transparent substrate, first and second sets of transparent conductors disposed on the transparent substrate, and formed as spacedly arranged straight non-loop lines, and a control device electrically coupled to the transparent conductors and operable to detect a detected signal from the transparent conductors, and to determine a position of the signal transmitting device relative to the transparent substrate.
摘要翻译：电磁感应输入装置包括信号发送装置，信号发送装置和信号接收装置。信号接收装置包括透明基板，设置在透明基板上的第一和第二组透明导体，并且形成为间隔布置的直的非环形线，以及控制装置，电连接到透明导体并且可操作以检测检测信号并且确定信号传输装置相对于透明基板的位置。

2. 发明授权

US6156655A Retardation layer for preventing diffusion of metal layer and fabrication method thereof 失效
标题翻译：用于防止金属层扩散的延迟层及其制造方法
公开(公告)号：US6156655A
公开(公告)日：2000-12-05
申请号：US408612
申请日：1999-09-30
申请人： Ming-Ching Huang , Chih-Rong Chen , Kuai-Jung Ho , Wen-Yuan Huang , Chi-Chin Yeh
发明人： Ming-Ching Huang , Chih-Rong Chen , Kuai-Jung Ho , Wen-Yuan Huang , Chi-Chin Yeh
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L23/5226 , H01L23/53238 , H01L2924/0002
摘要： A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.
摘要翻译：铜镶嵌工艺的延迟层及其制造方法，以层压层代替传统的阻挡层。层叠层将常规阻挡层与多孔层组合，其中多孔层可以形成在阻挡层的上方或下方，以改善铜原子扩散的延迟。优选地，多孔层形成在阻挡层上方。

3. 发明授权

US06080663A Dual damascene 失效
标题翻译：双镶嵌
公开(公告)号：US06080663A
公开(公告)日：2000-06-27
申请号：US191297
申请日：1998-11-13
申请人： Chih-Rong Chen , Wen-Yuan Huang
发明人： Chih-Rong Chen , Wen-Yuan Huang
IPC分类号： H01L21/3115 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76825 , H01L21/76813 , H01L21/31155
摘要： A dual damascene process is provided. A dielectric layer is formed on a substrate having a conductive region. The dielectric layer is selectively doped to form a doped region aligned over the conductive region. The doped region, the dielectric layer underlying the doped region, and another part of the undoped dielectric layer are etched until the conductive region is exposed, so that a dual damascene opening exposing the conductive region and a trench are formed, wherein the dual damascene opening comprising a upper trench and a lower via hole. The dual damascene opening and the trench are filled with a conductive layer.
摘要翻译：提供了双镶嵌工艺。在具有导电区域的基板上形成介电层。电介质层被选择性地掺杂以形成在导电区域上对准的掺杂区域。蚀刻掺杂区域，掺杂区域下面的电介质层和未掺杂电介质层的另一部分，直到导电区域被暴露，从而形成露出导电区域和沟槽的双镶嵌开口，其中双镶嵌开口包括上沟槽和下通孔。双镶嵌开口和沟槽填充有导电层。

4. 发明授权

US06171732B2 Method of manufacturing and application of dual alignment photomask 失效
标题翻译：双取向光掩模的制造和应用方法
公开(公告)号：US06171732B2
公开(公告)日：2001-01-09
申请号：US09304627
申请日：1999-05-04
申请人： Chih-Rong Chen , Wen-Yuan Huang
发明人： Chih-Rong Chen , Wen-Yuan Huang
IPC分类号： G03F900
CPC分类号： G03F1/38 , G03F7/70291
摘要： A method of forming a dual alignment photomask. The method includes the steps of depositing a light-blocking layer over a glass plate, and then patterning the light-blocking layer. Next, a switchable mask layer is deposited over the light-blocking layer and the glass plate, after which the switchable mask layer is patterned. Finally, a protective layer is formed over the switchable mask layer, the light-blocking layer and the glass plate. The switchable mask layer can be changed from a light-passing state to a light-blocking state by simply changing the surrounding temperature. Therefore, through proper setting the temperature, the same photomask can be used to form trenches and vias of dual damascene structures. Thus, some mask-making cost can be saved and errors due to mask misalignment can be avoided.
摘要翻译：形成双重取向光掩模的方法。该方法包括以下步骤：在玻璃板上沉积遮光层，然后对遮光层进行图案化。接下来，在遮光层和玻璃板上沉积可切割掩模层，然后对可切换掩模层进行图案化。最后，在可切换掩模层，遮光层和玻璃板上形成保护层。通过简单地改变周围温度，可切换掩模层可以从光通过状态变为遮光状态。因此，通过适当设定温度，可以使用相同的光掩模来形成双镶嵌结构的沟槽和通孔。因此，可以节省一些掩模制造成本，并且可以避免由于掩模不对准引起的误差。

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