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1. 发明申请

US20090221113A1 METHOD OF FABRICATING ORGANIC MEMORY DEVICE 有权
标题翻译：制造有机存储器件的方法
公开(公告)号：US20090221113A1
公开(公告)日：2009-09-03
申请号：US12465664
申请日：2009-05-14
申请人： Chia-Chieh Chang , Zing-Way Pei , Wen-Miao Lo
发明人： Chia-Chieh Chang , Zing-Way Pei , Wen-Miao Lo
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/51 , H01L27/285 , H01L51/0591
摘要： A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film.
摘要翻译：提供一种制造有机存储器件的方法。在该方法中，在基板上形成底部电极。在底部电极上进行第一表面处理，以在其表面上形成底面处理层。在底面处理层上形成聚合物薄膜，在聚合物薄膜上形成顶部电极。

2. 发明申请

US20070166911A1 BOTTOM ELECTRODE OF METAL-INSULATOR-METAL CAPACITOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：金属绝缘子金属电容器的底电极及其制造方法
公开(公告)号：US20070166911A1
公开(公告)日：2007-07-19
申请号：US11308841
申请日：2006-05-15
申请人： Wen-Miao Lo , Lurng-Sheng Lee , Pei-Ren Jeng , Cha-Hsin Lin , Ching-Chiun Wang
发明人： Wen-Miao Lo , Lurng-Sheng Lee , Pei-Ren Jeng , Cha-Hsin Lin , Ching-Chiun Wang
IPC分类号： H01L21/8244
CPC分类号： H01L21/0337 , H01L28/65
摘要： A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.
摘要翻译：提供一种制造金属 - 绝缘体 - 金属（MIM）电容器的底部电极的结构和方法。首先，在基板上形成过渡金属层。此后，在过渡金属层上形成具有纳米图案的自组装聚合物膜，以暴露过渡金属层的一部分。使用自组装聚合物膜作为掩模，过渡金属层的暴露部分被处理以进行相变，使得底部电极可以实现纳米级的相分离。此后，去除自组装聚合物膜。

3. 发明申请

US20070145525A1 MIM CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： MIM电容器结构及其制造方法
公开(公告)号：US20070145525A1
公开(公告)日：2007-06-28
申请号：US11463893
申请日：2006-08-11
申请人： Ching-Chiun Wang , Cha-Hsin Lin , Wen-Miao Lo , Lurng-Shehng Lee
发明人： Ching-Chiun Wang , Cha-Hsin Lin , Wen-Miao Lo , Lurng-Shehng Lee
IPC分类号： H01L29/00
CPC分类号： H01L28/75 , H01L28/65
摘要： A metal-insulator-insulator (MIM) capacitor structure is provided. The MIM capacitor includes a top electrode, a bottom electrode and a dielectric layer. The dielectric layer is disposed between the top electrode and the bottom electrode. The main feature for this kind of MIM capacitor is that the bottom electrode includes a conductive layer and a metal nitride with multi-layered structure. The metal nitride with multi-layered structure is disposed between the conductive layer and the dielectric layer. The nitrogen content in the metal nitride with multi-layered structure gradually increases toward the dielectric layer and the metal nitride belongs to the amorphous type. Due to the presence of the metal nitride, the dielectric layer is prevented from crystallization, thereby reducing the current leakage of the MIM capacitor.
摘要翻译：提供了一种金属绝缘体绝缘体（MIM）电容器结构。 MIM电容器包括顶电极，底电极和电介质层。介电层设置在顶部电极和底部电极之间。这种MIM电容器的主要特征在于，底部电极包括导电层和具有多层结构的金属氮化物。具有多层结构的金属氮化物被设置在导电层和电介质层之间。具有多层结构的金属氮化物中的氮含量朝向电介质层逐渐增加，并且金属氮化物属于非晶型。由于金属氮化物的存在，阻止介电层结晶，从而减少MIM电容器的电流泄漏。

4. 发明授权

US07880213B2 Bottom electrode of metal-insulator-metal capacitor 有权
标题翻译：金属 - 绝缘体 - 金属电容器底部电极
公开(公告)号：US07880213B2
公开(公告)日：2011-02-01
申请号：US11308841
申请日：2006-05-15
申请人： Wen-Miao Lo , Lurng-Sheng Lee , Pei-Ren Jeng , Cha-Hsin Lin , Ching-Chiun Wang
发明人： Wen-Miao Lo , Lurng-Sheng Lee , Pei-Ren Jeng , Cha-Hsin Lin , Ching-Chiun Wang
IPC分类号： H01L27/108
CPC分类号： H01L21/0337 , H01L28/65
摘要： A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.
摘要翻译：提供一种制造金属 - 绝缘体 - 金属（MIM）电容器的底部电极的结构和方法。首先，在基板上形成过渡金属层。此后，在过渡金属层上形成具有纳米图案的自组装聚合物膜，以暴露过渡金属层的一部分。使用自组装聚合物膜作为掩模，过渡金属层的暴露部分被处理以进行相变，使得底部电极可以实现纳米级的相分离。此后，去除自组装聚合物膜。

5. 发明申请

US20070170420A1 ORGANIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：有机存储器件及其制造方法
公开(公告)号：US20070170420A1
公开(公告)日：2007-07-26
申请号：US11309357
申请日：2006-07-31
申请人： Chia-Chieh Chang , Zing-Way Pei , Wen-Miao Lo
发明人： Chia-Chieh Chang , Zing-Way Pei , Wen-Miao Lo
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/51 , H01L27/285 , H01L51/0591
摘要： An organic memory device includes a top electrode, a bottom electrode, and a bistable organic polymer layer between the top and bottom electrodes. Moreover, the organic memory device further includes a surface treatment layer between the organic polymer layer and the bottom electrode. Because the surface treatment layer can stabilize the interface between the organic polymer layer and the bottom electrode, the reliability of the device may be promoted.
摘要翻译：有机存储装置包括顶电极，底电极和位于顶电极和底电极之间的双稳态有机聚合物层。此外，有机存储装置还包括在有机聚合物层和底部电极之间的表面处理层。因为表面处理层可以稳定有机聚合物层和底部电极之间的界面，所以可以提高装置的可靠性。

6. 发明授权

US08105914B2 Method of fabricating organic memory device 有权
标题翻译：制造有机存储器件的方法
公开(公告)号：US08105914B2
公开(公告)日：2012-01-31
申请号：US12465664
申请日：2009-05-14
申请人： Chia-Chieh Chang , Zing-Way Pei , Wen-Miao Lo
发明人： Chia-Chieh Chang , Zing-Way Pei , Wen-Miao Lo
IPC分类号： H01L21/20
CPC分类号： H01L51/105 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/51 , H01L27/285 , H01L51/0591
摘要： A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film.
摘要翻译：提供一种制造有机存储器件的方法。在该方法中，在基板上形成底部电极。在底部电极上进行第一表面处理，以在其表面上形成底面处理层。在底面处理层上形成聚合物薄膜，在聚合物薄膜上形成顶部电极。

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