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    • 1. 发明申请
    • METHODS AND SYSTEMS FOR DETECTING DEFECTS ON A RETICLE
    • 用于检测有缺陷的方法和系统
    • US20100142800A1
    • 2010-06-10
    • US12328862
    • 2008-12-05
    • Patrick Tung-Sing PakWee-Teck ChiaAaron Geurdon ChinIrfan MalikBrian Duffy
    • Patrick Tung-Sing PakWee-Teck ChiaAaron Geurdon ChinIrfan MalikBrian Duffy
    • G06K9/00
    • G01N21/956G01N2021/95676G06T7/001G06T2207/30148
    • Methods and systems for detecting defects on a reticle are provided. One method includes printing a single die reticle in first areas of a wafer using different values of a parameter of a lithography process and at least one second area using a nominal value of the parameter. The method also includes acquiring first images of the first areas and second image(s) of the at least one second area. In addition, the method includes separately comparing the first images acquired for different first areas to at least one of the second image(s). The method further includes detecting defects on the reticle based on first portions of the first images in which variations in the first images compared to the at least one second image are greater than second portions of the first images and the first portions that are common to two or more of the first images.
    • 提供了用于检测光罩上的缺陷的方法和系统。 一种方法包括使用光刻工艺的参数的不同值和使用参数的标称值的至少一个第二区域在晶片的第一区域中印刷单个模具掩模版。 该方法还包括获取至少一个第二区域的第一区域和第二图像的第一图像。 此外,该方法包括将对于不同的第一区域获取的第一图像分别与第二图像中的至少一个进行比较。 该方法还包括基于第一图像的第一部分来检测标线上的缺陷,其中与至少一个第二图像相比的第一图像的变化大于第一图像的第二部分和第二图像的两个共同的第一部分 或更多的第一图像。
    • 2. 发明授权
    • Methods and systems for detecting defects on a reticle
    • 用于检测光罩上的缺陷的方法和系统
    • US08041106B2
    • 2011-10-18
    • US12328862
    • 2008-12-05
    • Patrick Tung-Sing PakWee-Teck ChiaAaron Geurdon ChinIrfan MalikBrian Duffy
    • Patrick Tung-Sing PakWee-Teck ChiaAaron Geurdon ChinIrfan MalikBrian Duffy
    • G01K9/00
    • G01N21/956G01N2021/95676G06T7/001G06T2207/30148
    • Methods and systems for detecting defects on a reticle are provided. One method includes printing a single die reticle in first areas of a wafer using different values of a parameter of a lithography process and at least one second area using a nominal value of the parameter. The method also includes acquiring first images of the first areas and second image(s) of the at least one second area. In addition, the method includes separately comparing the first images acquired for different first areas to at least one of the second image(s). The method further includes detecting defects on the reticle based on first portions of the first images in which variations in the first images compared to the at least one second image are greater than second portions of the first images and the first portions that are common to two or more of the first images.
    • 提供了用于检测光罩上的缺陷的方法和系统。 一种方法包括使用光刻工艺的参数的不同值和使用参数的标称值的至少一个第二区域在晶片的第一区域中印刷单个模具掩模版。 该方法还包括获取至少一个第二区域的第一区域和第二图像的第一图像。 此外,该方法包括将对于不同的第一区域获取的第一图像分别与第二图像中的至少一个进行比较。 该方法还包括基于第一图像的第一部分来检测标线上的缺陷,其中与至少一个第二图像相比的第一图像的变化大于第一图像的第二部分和第二图像的两个共同的第一部分 或更多的第一图像。