会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Conductive metal oxide structures in non volatile re writable memory devices
    • 非易失性可重写存储器件中的导电金属氧化物结构
    • US08565006B2
    • 2013-10-22
    • US13719106
    • 2012-12-18
    • Lawrence SchlossJulie Casperson BrewerWayne KinneyRene Meyer
    • Lawrence SchlossJulie Casperson BrewerWayne KinneyRene Meyer
    • G11C13/00
    • H01L45/085G11C11/5685G11C13/0007G11C13/003G11C2013/0073G11C2213/56G11C2213/71G11C2213/72G11C2213/74G11C2213/76
    • A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).
    • 公开了包括与导电金属氧化物(CMO)接触的电解绝缘体的存储元件的存储单元。 CMO包括晶体结构并且可以包含烧绿石氧化物,导电二元氧化物,多个B位钙钛矿和Ruddlesden-Popper结构。 CMO包括可以响应于施加在电解绝缘体和CMO上施加的写入电压产生的适当幅度和方向的电场,可以将其输送到电解绝缘体/从电解绝缘体传输的移动离子。 存储器单元可以包括与存储元件电串联的非欧姆器件(NOD)。 存储器单元可以位于单层存储器中的两端交叉点存储器阵列中的导电阵列线的交叉点或多个垂直堆叠的存储器层之间,该衬底层在衬底上制造,该衬底包括用于数据的有源电路 对数组层进行操作。