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1. 发明申请

US20060109316A1 Storage and semiconductor device 有权
标题翻译：存储和半导体器件
公开(公告)号：US20060109316A1
公开(公告)日：2006-05-25
申请号：US11243342
申请日：2005-10-04
申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
发明人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
IPC分类号： B41J2/05
CPC分类号： G11C13/00 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , G11C2213/79
摘要： A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
摘要翻译：存储装置包括存储元件，其具有使得其电阻值由于高于或等于施加的第一阈值信号的电信号而从高状态变为低状态的特性，并且从低状态改变为作为高于或等于极性与施加的第一阈值信号的极性不同的第二阈值信号的电信号的结果的高状态; 以及电路元件，其与所述存储元件串联连接并用作负载，所述存储元件和所述电路元件形成存储单元，并且所述存储单元被布置成矩阵，其中所述电路元件的电阻值当存储元件被读取时与存储元件被写入或擦除时的电阻值不同。

2. 发明申请

US20060092685A1 Storage apparatus 有权
标题翻译：储存装置
公开(公告)号：US20060092685A1
公开(公告)日：2006-05-04
申请号：US11245325
申请日：2005-10-05
申请人： Wataru Ootsuka , Tomohito Tsushima , Hidenari Hachino
发明人： Wataru Ootsuka , Tomohito Tsushima , Hidenari Hachino
IPC分类号： G11C11/22
CPC分类号： G11C11/16
摘要： The present invention provides a storage apparatus including a variable resistance element having a recording layer between two electrodes. In the variable resistance element, a resistance value of the recording layer is reversibly changed to one of a value in a high-resistance state and a value in a low-resistance state by applying potentials of different polarities to the two electrodes. An absolute value of a threshold value of an applied signal at a time of change from the high-resistance state to the low-resistance state and an absolute value of a threshold value of an applied signal at a time of change from the low-resistance state to the high-resistance state differ from each other. A reading signal for detecting the resistance value of the recording layer in the variable resistance element is applied with a polarity of one of the threshold values of the applied signals which one has a higher absolute value and with a value lower than the absolute value.
摘要翻译：本发明提供了一种存储装置，包括在两个电极之间具有记录层的可变电阻元件。在可变电阻元件中，通过向两个电极施加不同极性的电位，记录层的电阻值被可逆地改变为高电阻状态的值和低电阻状态的值之一。从高电阻状态向低电阻状态变化时的施加信号的阈值的绝对值和从低电阻变化时的施加信号的阈值的绝对值状态到高电阻状态彼此不同。用于检测可变电阻元件中的记录层的电阻值的读取信号以一个具有较高绝对值并且具有低于绝对值的值的施加信号的阈值之一的极性被施加。

3. 发明授权

US07372718B2 Storage and semiconductor device 有权
标题翻译：存储和半导体器件
公开(公告)号：US07372718B2
公开(公告)日：2008-05-13
申请号：US11243342
申请日：2005-10-04
申请人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
发明人： Hajime Nagao , Hidenari Hachino , Tsutomu Sagara , Hironobu Mori , Nobumichi Okazaki , Wataru Ootsuka , Tomohito Tsushima , Chieko Nakashima
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C13/00 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , G11C2213/79
摘要： A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.
摘要翻译：存储装置包括存储元件，其具有使得其电阻值由于高于或等于施加的第一阈值信号的电信号而从高状态变为低状态的特性，并且从低状态改变为作为高于或等于极性与施加的第一阈值信号的极性不同的第二阈值信号的电信号的结果的高状态; 以及电路元件，其与所述存储元件串联连接并用作负载，所述存储元件和所述电路元件形成存储单元，并且所述存储单元被布置成矩阵，其中所述电路元件的电阻值当存储元件被读取时与存储元件被写入或擦除时的电阻值不同。

4. 发明授权

US07239542B2 Storage apparatus 有权
标题翻译：储存装置
公开(公告)号：US07239542B2
公开(公告)日：2007-07-03
申请号：US11245325
申请日：2005-10-05
申请人： Wataru Ootsuka , Tomohito Tsushima , Hidenari Hachino
发明人： Wataru Ootsuka , Tomohito Tsushima , Hidenari Hachino
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The present invention provides a storage apparatus including a variable resistance element having a recording layer between two electrodes. In the variable resistance element, a resistance value of the recording layer is reversibly changed to one of a value in a high-resistance state and a value in a low-resistance state by applying potentials of different polarities to the two electrodes. An absolute value of a threshold value of an applied signal at a time of change from the high-resistance state to the low-resistance state and an absolute value of a threshold value of an applied signal at a time of change from the low-resistance state to the high-resistance state differ from each other. A reading signal for detecting the resistance value of the recording layer in the variable resistance element is applied with a polarity of one of the threshold values of the applied signals which one has a higher absolute value and with a value lower than the absolute value.
摘要翻译：本发明提供了一种存储装置，包括在两个电极之间具有记录层的可变电阻元件。在可变电阻元件中，通过向两个电极施加不同极性的电位，记录层的电阻值被可逆地改变为高电阻状态的值和低电阻状态的值之一。从高电阻状态向低电阻状态变化时的施加信号的阈值的绝对值和从低电阻变化时的施加信号的阈值的绝对值状态到高电阻状态彼此不同。用于检测可变电阻元件中的记录层的电阻值的读取信号以一个具有较高绝对值并且具有低于绝对值的值的施加信号的阈值之一的极性被施加。

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