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1. 发明授权

US08513696B2 Lateral thermal dissipation LED and fabrication method thereof 失效
标题翻译：横向散热LED及其制造方法
公开(公告)号：US08513696B2
公开(公告)日：2013-08-20
申请号：US12717788
申请日：2010-03-04
申请人： Po Min Tu , Shih Cheng Huang , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
发明人： Po Min Tu , Shih Cheng Huang , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
IPC分类号： H01L29/06 , H01L31/00 , H01L33/00 , H01L23/28
CPC分类号： H01L33/44 , H01L33/642 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved.
摘要翻译：提供横向散热LED及其制造方法。横向散热LED利用图案化金属层和横向散热层将热量传出LED。提高了LED的散热效率，相应地提高了发光效率。

2. 发明授权

US08470621B2 Method for fabricating a flip-chip semiconductor optoelectronic device 失效
标题翻译：制造倒装芯片半导体光电器件的方法
公开(公告)号：US08470621B2
公开(公告)日：2013-06-25
申请号：US12722231
申请日：2010-03-11
申请人： Chester Kuo , Lung Hsin Chen , Wen Liang Tseng , Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
发明人： Chester Kuo , Lung Hsin Chen , Wen Liang Tseng , Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
IPC分类号： H01L33/48 , H01L27/15 , H01L33/00
CPC分类号： H01L33/62 , H01L27/156 , H01L33/0079 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.
摘要翻译：用于制造倒装芯片半导体光电器件的方法首先将连接到外延衬底的半导体光电芯片倒装芯片结合到封装衬底。然后使用剥离技术分离外延衬底。

3. 发明申请

US20120190141A1 METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR 有权
标题翻译：制造具有半导体转换层的多色发光二极管器件的方法
公开(公告)号：US20120190141A1
公开(公告)日：2012-07-26
申请号：US13434860
申请日：2012-03-30
申请人： SHIH-CHENG HUANG , PO-MIN TU , YING-CHAO YEH , WEN-YU LIN , PENG-YI WU , SHIH-HSIUNG CHAN
发明人： SHIH-CHENG HUANG , PO-MIN TU , YING-CHAO YEH , WEN-YU LIN , PENG-YI WU , SHIH-HSIUNG CHAN
IPC分类号： H01L33/50
CPC分类号： H01L33/08 , H01L33/0079
摘要： A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.
摘要翻译：一种制造多色发光二极管器件的方法，包括以下步骤：在外延衬底上提供外延衬底和形成多重半导体层，其中所述多重半导体层包括n型半导体层，p型半导体层和活动层有源层发射第一波长的光。此后，在多个半导体层上形成第一波长转换层。第一波长转换层由半导体制成，并吸收一部分第一波长的光并发射第二波长的光，其中第二波长比第一波长长。

4. 发明授权

US08226286B2 Edge-lit backlight module 有权
标题翻译：边缘照明背光模组
公开(公告)号：US08226286B2
公开(公告)日：2012-07-24
申请号：US12842972
申请日：2010-07-23
申请人： Wen-yu Lin , Taso-yuan Fu , Hao-ping Cheng
发明人： Wen-yu Lin , Taso-yuan Fu , Hao-ping Cheng
IPC分类号： F21V7/04
CPC分类号： G02B6/0021 , G02B6/0068 , G02B6/0073 , G02B6/0086
摘要： An edge-lit backlight module includes a back plate, a light bar, and a light guide plate. The back plate has a bottom plate and four lateral sides. Each of the lateral sides is perpendicular to the bottom plate and connected to a peripheral edge of the bottom plate. The light bar is disposed on a side of an internal face of one of the lateral sides to leave at least one accommodation space on the lateral side. The light guide plate has at least one extension portion corresponding to the accommodation space. The light guide plate is disposed on the bottom plate, and each extension portion of the light guide plate engages with the corresponding accommodation space for fixing the light guide plate onto the back plate.
摘要翻译：边缘照明背光模块包括背板，光杆和导光板。背板具有底板和四个侧面。每个侧面垂直于底板并连接到底板的周边边缘。光条设置在侧面之一的内表面的一侧，以在侧面留下至少一个容纳空间。导光板具有至少一个对应于容纳空间的延伸部分。导光板设置在底板上，导光板的每个延伸部分与相应的容纳空间配合，用于将导光板固定在背板上。

5. 发明授权

US08202752B2 Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device 有权
标题翻译：一种用于制造用于减少器件中位错缺陷的发光半导体器件的方法
公开(公告)号：US08202752B2
公开(公告)日：2012-06-19
申请号：US12488875
申请日：2009-06-22
申请人： Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
发明人： Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
IPC分类号： H01L21/00 , H01L21/338
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02505 , H01L21/02656 , H01L33/007 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
摘要翻译：公开了一种半导体器件制造方法。提供缓冲层，在缓冲层上形成第一半导体层。接下来，在外延工艺期间，通过掺杂剂以高浓度在第一半导体层上形成第一中间层。第二半导体层覆盖在第一中间层上。在第二半导体层上生长半导体发光器件。中间层和第二半导体层的形成是一组步骤。

6. 发明申请

US20110114983A1 PHOTOELECTRIC DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR 有权
标题翻译：具有III类氮化物半导体的光电器件
公开(公告)号：US20110114983A1
公开(公告)日：2011-05-19
申请号：US13015590
申请日：2011-01-28
申请人： PO-MIN TU , SHIH-CHENG HUANG , WEN-YU LIN , CHIH-PENG HSU , SHIH-HSIUNG CHAN
发明人： PO-MIN TU , SHIH-CHENG HUANG , WEN-YU LIN , CHIH-PENG HSU , SHIH-HSIUNG CHAN
IPC分类号： H01L33/10
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
摘要翻译：具有III族氮化物半导体的光电器件包括导电层，位于导电层上的金属镜层和位于金属镜面层上的III族氮化物半导体层。 III族氮化物半导体层在其上限定了许多微结构。每个微结构包括至少一个成角度的面，并且每个微结构的倾斜面是III族氮化物半导体层的晶体面。

7. 发明申请

US20110095313A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20110095313A1
公开(公告)日：2011-04-28
申请号：US12891731
申请日：2010-09-27
申请人： Peng-Yi Wu , Shih-Cheng Huang , Po-Min Tu , Wen-Yu Lin , Tzu-Chien Hong
发明人： Peng-Yi Wu , Shih-Cheng Huang , Po-Min Tu , Wen-Yu Lin , Tzu-Chien Hong
IPC分类号： H01L33/30
CPC分类号： H01L33/007 , H01L33/44
摘要： A method for manufacturing light-emitting diode (LED) first provides a substrate, then a protrusive patterned layer is formed on the substrate. The protrusive patterned layer exposes portions of the substrate, and the exposed portions are defined as a plurality of exposed regions. Next, a plurality of island semiconductor multi-layer is individually formed in each exposed region of the substrate.
摘要翻译：一种制造发光二极管（LED）的方法首先提供一种衬底，然后在衬底上形成凸出的图案层。突出图案层露出基板的部分，并且暴露部分被定义为多个暴露区域。接下来，在基板的每个曝光区域中分别形成多个岛状半导体多层。

8. 发明申请

US20100259928A1 LIGHT-EMITTING DIODE MODULE 有权
标题翻译：发光二极管模块
公开(公告)号：US20100259928A1
公开(公告)日：2010-10-14
申请号：US12495818
申请日：2009-07-01
申请人： Hung-Yi Ou Yang , Wen-Yu Lin
发明人： Hung-Yi Ou Yang , Wen-Yu Lin
IPC分类号： F21V1/00 , F21S4/00
CPC分类号： H05B33/0803 , F21K9/00 , F21V23/06 , F21Y2105/10 , F21Y2115/10 , H01R12/79 , H05K1/148
摘要： A light-emitting diode (LED) module includes a plurality of LED units and a converter having a first side. The LED units respectively include a circuit board having a second side perpendicular to the first side and a third side parallel to the first side, a plurality of LEDs positioned on the circuit board, and a connector positioned on the second side proximal to the converter. The LED module further includes a plurality of flexible flat cables (FFCs) used to electrically connect the connectors to the converter, respectively.
摘要翻译：发光二极管（LED）模块包括多个LED单元和具有第一侧的转换器。 LED单元分别包括具有垂直于第一侧的第二侧和与第一侧平行的第三侧的电路板，位于电路板上的多个LED以及位于转换器附近的第二侧的连接器。 LED模块还包括分别用于将连接器电连接到转换器的多个柔性扁平电缆（FFC）。

9. 发明申请

US20100224858A1 LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF 失效
标题翻译：横向散热LED及其制造方法
公开(公告)号：US20100224858A1
公开(公告)日：2010-09-09
申请号：US12717788
申请日：2010-03-04
申请人： PO MIN TU , SHIH CHENG HUANG , YING CHAO YEH , WEN YU LIN , PENG YI WU , SHIH HSIUNG CHAN
发明人： PO MIN TU , SHIH CHENG HUANG , YING CHAO YEH , WEN YU LIN , PENG YI WU , SHIH HSIUNG CHAN
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/642 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved.
摘要翻译：提供横向散热LED及其制造方法。横向散热LED利用图案化金属层和横向散热层将热量传出LED。提高了LED的散热效率，相应地提高了发光效率。

10. 发明申请

US20100170936A1 METHOD FOR BONDING TWO MATERIALS 审中-公开
标题翻译：用于连接两种材料的方法
公开(公告)号：US20100170936A1
公开(公告)日：2010-07-08
申请号：US12650056
申请日：2009-12-30
申请人： PO MIN TU , SHIH CHENG HUANG , YING CHAO YEH , WEN YU LIN , PENG YI WU , SHIH HSIUNG CHAN
发明人： PO MIN TU , SHIH CHENG HUANG , YING CHAO YEH , WEN YU LIN , PENG YI WU , SHIH HSIUNG CHAN
IPC分类号： B23K31/02
CPC分类号： B23K13/01 , B23K2101/40 , H01L21/187 , H01L33/0079
摘要： A method for bonding two materials uses radio frequency energy to swiftly induce heat in a high permeability material for heating a medium to the bonding temperature of the medium so as to bond the two materials with each other.
摘要翻译：用于接合两种材料的方法使用射频能量来迅速地在高磁导率材料中引起热量，以将介质加热到介质的粘合温度，以便将两种材料彼此粘合。

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