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1. 发明授权

US06944578B2 Contact hole profile and line edge width metrology for critical image control and feedback of lithographic focus 失效
标题翻译：接触孔轮廓和线边缘宽度测量用于关键图像控制和光刻焦点反馈
公开(公告)号：US06944578B2
公开(公告)日：2005-09-13
申请号：US10868411
申请日：2004-06-15
申请人： Reginald R. Bowley, Jr. , Vincent J. Carlos , James E. Doran , Stephen E. Knight , Robert K. Leidy , Keith J. Machia , Joseph E. Shaver , Dianne L. Sundling
发明人： Reginald R. Bowley, Jr. , Vincent J. Carlos , James E. Doran , Stephen E. Knight , Robert K. Leidy , Keith J. Machia , Joseph E. Shaver , Dianne L. Sundling
IPC分类号： G03F7/20 , G03F9/02 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.
摘要翻译：一种方法使用三维特征计量来实现关键图像控制和光刻焦点和x / y倾斜的反馈。该方法用于测量光敏膜中的三维轮廓变化，并反馈补偿曝光工具对焦校正以保持稳定的光刻过程。从最佳工具对焦偏移测量的焦点变化直接监测接触孔和线图像的关键产品图像。 Z独立于剂量反馈对焦校正和x / y倾斜校正以维持关键尺寸（CD）控制。此外，该方法可用于通过测量线边宽度和大气压力之间的关系来诊断聚焦系统的问题。

2. 发明授权

US07060626B2 Multi-run selective pattern and etch wafer process 失效
标题翻译：多运行选择性图案和蚀刻晶圆工艺
公开(公告)号：US07060626B2
公开(公告)日：2006-06-13
申请号：US10604087
申请日：2003-06-25
申请人： Kenneth A. Bandy , Vincent J. Carlos , Mark D. Levy , Sara L. Lucas , Timothy C. Milmore , Matthew C. Nicholls , Jason Nowakowski
发明人： Kenneth A. Bandy , Vincent J. Carlos , Mark D. Levy , Sara L. Lucas , Timothy C. Milmore , Matthew C. Nicholls , Jason Nowakowski
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0271 , H01L21/31144
摘要： A method for forming a semiconductor wafer comprising of applying a first patterned resist to at least one first predetermined region of a wafer where said at least one first predetermined region of said wafer are protected by said first patterned resist and a first remaining portion of said wafer is not protected by said first patterned resist; etching said first remaining portion of said wafer not protected by said first pattern resist; stripping the first pattern resist from said wafer; applying a second patterned resist to at least one second pre-determined region of said wafer where said at least one second predetermined region of said wafer are protected by a second patterned resist and a second remaining portion is not protected by said second patterned resist; etching said second remaining portion not protected by said second patterned resist; and stripping said second patterned resist from said wafer.
摘要翻译：一种用于形成半导体晶片的方法，包括将第一图案化抗蚀剂施加到晶片的至少一个第一预定区域，其中所述晶片的所述至少一个第一预定区域被所述第一图案化抗蚀剂保护并且所述晶片的第一剩余部分不受所述第一图案化抗蚀剂的保护; 蚀刻所述晶片的未被所述第一图案抗蚀剂保护的所述第一剩余部分; 从所述晶片剥离第一图案抗蚀剂; 将第二图案化抗蚀剂施加到所述晶片的至少一个第二预定区域，其中所述晶片的所述至少一个第二预定区域被第二图案化抗蚀剂保护，并且第二剩余部分不被所述第二图案化抗蚀剂保护; 蚀刻不被所述第二图案化抗蚀剂保护的所述第二剩余部分; 以及从所述晶片剥离所述第二图案化抗蚀剂。

3. 发明授权

US06917901B2 Contact hole profile and line edge width metrology for critical image control and feedback of lithographic focus 失效
标题翻译：接触孔轮廓和线边缘宽度测量用于关键图像控制和光刻焦点反馈
公开(公告)号：US06917901B2
公开(公告)日：2005-07-12
申请号：US10079389
申请日：2002-02-20
申请人： Reginald R. Bowley, Jr. , Vincent J. Carlos , James E. Doran , Stephen E. Knight , Robert K. Leidy , Keith J. Machia , Joseph E. Shaver , Dianne L. Sundling
发明人： Reginald R. Bowley, Jr. , Vincent J. Carlos , James E. Doran , Stephen E. Knight , Robert K. Leidy , Keith J. Machia , Joseph E. Shaver , Dianne L. Sundling
IPC分类号： G03F7/20 , G03F9/02 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control thereby achieving improved semiconductor wafer printing. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.
摘要翻译：一种方法使用三维特征计量来实现关键图像控制和光刻焦点和x / y倾斜的反馈。该方法用于测量光敏膜中的三维轮廓变化，并反馈补偿曝光工具对焦校正以保持稳定的光刻过程。从最佳工具对焦偏移测量的焦点变化直接监测接触孔和线图像的关键产品图像。 Z独立于剂量反馈聚焦校正和x / y倾斜校正以维持临界尺寸（CD）控制，从而实现改进的半导体晶片印刷。此外，该方法可用于通过测量线边宽度和大气压力之间的关系来诊断聚焦系统的问题。

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