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    • 2. 发明授权
    • Low impedance plasma
    • 低阻抗等离子体
    • US09028660B2
    • 2015-05-12
    • US12673393
    • 2008-08-14
    • Victor Bellido-Gonzalez
    • Victor Bellido-Gonzalez
    • C23C14/35H01J37/34
    • H01J37/3405H01J37/3452
    • A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a); an anode (2b); the magnetic array being arranged to create an asymmetric plasma distribution with respect to the normal angle of incidence to a substrate (3); and means (1b) for enhancing the magnetic field to produce a relatively low impedance path for electrons flowing from the cathode (2a) to the anode (2b).
    • 磁控管溅射装置(100)包括:磁性阵列,被布置成在管状靶(2)附近产生磁场(103),所述磁场靶至少部分地围绕所述磁阵列并用作阴极(2a); 阳极(2b); 磁性阵列被布置成相对于基板(3)的法向入射角产生不对称等离子体分布; 以及用于增强磁场以产生从阴极(2a)流到阳极(2b)的电子的相对低阻抗路径的装置(1b)。
    • 3. 发明申请
    • Magnetron sputtering device
    • 磁控溅射装置
    • US20050034980A1
    • 2005-02-17
    • US10494973
    • 2002-11-07
    • Dermot MonaghanVictor Bellido-Gonzalez
    • Dermot MonaghanVictor Bellido-Gonzalez
    • C23C14/34C23C14/35H01J37/32H01J37/34C23C14/00
    • H01J37/3429C23C14/352H01J37/3405H01J37/3426
    • A target arrangement for use within a vacuum sputtering zone comprising: a primary target (1) comprising material to be sputtered and an auxiliary target (2) of ferromagnetic material, the targets being located relative to one another such that upon application of a magnetic field across the surface of the targets, the magnetic field over the primary target is confined into an area of high homogeneous magnetic field strength substantially parallel to the surface of the primary target, to achieve uniform erosion across said area of target during sputtering. Preferably the primary target and auxiliary target are spaced apart by a gap (12), to enhance the confinement of magnetic field. The auxiliary target may have a surface which is raised beyond a surface of the primary target. The primary target may be of ferromagnetic or non-magnetic material.
    • 一种在真空溅射区内使用的目标装置,包括:主要靶(1),其包括要溅射的材料和铁磁材料的辅助靶(2),所述靶相对于彼此定位,使得在施加磁场 在靶的表面上,主要目标上的磁场被限制在基本上平行于主要靶的表面的高均匀磁场强度的区域中,以在溅射期间在靶的所有区域上实现均匀的侵蚀。 优选地,主要靶材和辅助靶材由间隙(12)间隔开,以增强磁场的限制。 辅助靶可以具有升高超过主要靶的表面的表面。 主要靶材可以是铁磁性或非磁性材料。
    • 4. 发明授权
    • Low friction coating
    • 低摩擦涂层
    • US06551718B2
    • 2003-04-22
    • US09319826
    • 1999-06-11
    • Victor Bellido-Gonzalez
    • Victor Bellido-Gonzalez
    • B32B1504
    • C23C14/0623C23C14/06C23C16/30Y10T428/31678
    • Disclosed is a metal sulphide coating composition of the formula MXSiVRYSZFW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements selected from: C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H, and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V, and W are given in amounts by atomic ratio. The compositions show good non-stick properties, low hydrophilia, and high stability.
    • 公开了式MXSiVRYSZFW的金属硫化物涂料组合物,其中M是选自Mo,Ti,W,Nb,Ta,Zr和Hf中的一种或多种金属; 硅是硅; R是选自C,B,Al,V,Cr,Fe,Co,Ni,Sm,Au,Cu,Zn,Sn,Pb,N,H和O中的一种或多种元素; S是硫; F是氟; X为0.2〜1.5; V为0.02〜3; Y为0〜4; Z为0.2〜6; W为0.01〜6,X,Y,Z,V,W的原子比为原子数。 组合物显示出良好的不粘性,低亲水性和高稳定性。