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1. 发明申请

US20230121340A1 VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH SMALL DIVERGENCE ANGLE 有权
公开(公告)号：US20230121340A1
公开(公告)日：2023-04-20
申请号：US17966544
申请日：2022-10-14
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Van-Truoung Dai , Yu-Chung Chin , Chao-Hsing Huang
IPC分类号： H01S5/183
摘要： Provided is a vertical cavity surface emitting laser diode (VCSEL) with a small divergence angle. The VCSEL includes a multi-layer structure on a substrate. The multi-layer structure includes an active region and current confinement layers. Each of the current confinement layers has an optical aperture (OA). When the area of the OA of the current confinement layer outside the active region is larger than the areas of the OAs of the current confinement layers inside the active region, such that the VCSEL has a small divergence angle in the short pulse mode.

2. 发明申请

US20210104872A1 VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH TUNNEL JUNCTION 有权
公开(公告)号：US20210104872A1
公开(公告)日：2021-04-08
申请号：US17060287
申请日：2020-10-01
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
IPC分类号： H01S5/30 , H01S5/183 , H01S5/02 , H01S5/343
摘要： Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not only has a high doping concentration, but also the epitaxial layer can be oxidized and the oxidation rate is relatively stable during the oxidation process. Alternatively, the n-type semiconductor layer is doped with at least two elements. As a result, the oxidation process of the VCSEL can be stably performed, and the resistance of the tunnel junction with a high doping concentration is low. The tunnel junction is suitable to be arranged between two active layers of the VCSEL or between the p-type semiconductor and the n-type semiconductor layer of the VCSEL.

3. 发明申请

US20140361344A1 HIGH ELECTRON MOBILITY BIPOLAR TRANSISTOR 审中-公开
标题翻译：高电子移动双极晶体管
公开(公告)号：US20140361344A1
公开(公告)日：2014-12-11
申请号：US14326673
申请日：2014-07-09
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Yu-Chung Chin , Chao-Hsing Huang
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20
CPC分类号： H01L29/778 , H01L29/0821 , H01L29/20 , H01L29/2003 , H01L29/205 , H01L29/7371 , H01L29/7378 , H01L29/7785
摘要： A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 5×1017 cm−3 and 1×1020 cm−3, and/or the oxygen concentration within 5×1018 cm−3 and 1×1020 cm−3.The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.
摘要翻译：公开了一种高电子迁移率双极晶体管，其包括从底部到顶部顺序层叠的基板，伪晶体高电子迁移率晶体管（pHEMT）子结构，子集电极/分离层和异质结双极晶体管（HBT）子结构。将亚集电极/分离层和pHEMT子结构组合形成pHEMT，并将亚集电极/分离层和HBT子结构组合形成HBT。子集电极/分离层中的碳浓度在5×1017cm-3和1×1020cm-3之间，和/或氧浓度在5×1018cm-3和1×1020cm-3之间。在外延生长过程中的晶格是稳定的，并且可以防止掺杂剂，元素，空位或缺陷扩散到相邻层中，从而改善迁移率降低和电阻增加的问题，并且保持稳定性制造过程。

4. 发明授权

US11158995B2 Laser diode with defect blocking layer 有权
公开(公告)号：US11158995B2
公开(公告)日：2021-10-26
申请号：US16424569
申请日：2019-05-29
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Yu-Chung Chin , Chao-Hsing Huang , Van-Truong Dai
IPC分类号： H01S5/02 , H01S5/34 , H01S5/125
摘要： A laser diode is provided, including at least a defect blocking layer deposited between the GaAs substrate and the active layer, so that the crystal defects of the GaAs substrate can be blocked or reduced from propagation to the active layer when the epitaxial layer is formed on the GaAs substrate. As such, the crystal quality of the active layer can be improved, thereby improving the reliability and optical property of the laser diode.

5. 发明授权

US11049936B2 High ruggedness heterojunction bipolar transistor structure 有权
公开(公告)号：US11049936B2
公开(公告)日：2021-06-29
申请号：US16292365
申请日：2019-03-05
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Yu-Chung Chin , Chao-Hsing Huang , Min-Nan Tseng , Kai-Yu Chen
IPC分类号： H01L33/00 , H01L21/00 , H01L29/08 , H01L29/205 , H01L29/737 , H01L27/082 , H01L29/732
摘要： The disclosure provides a high ruggedness HBT structure, including: a sub-collector layer on a substrate and formed of an N-type III-V semiconductor material; a collector layer on the sub-collector layer and formed of a III-V semiconductor material; a base layer on the collector layer and formed of a P-type III-V semiconductor material; an emitter layer on the base layer and formed of one of N-type semiconductor materials of InGaP, InGaAsP and InAlGaP; a first emitter cap layer on the emitter layer and formed of one of undoped or N-type semiconductor materials of AlxGa1-xAs, AlxGa1-xAs1-yNy, AlxGa1-xAs1-zPz, AlxGa1-xAs1-wSbw, and InrAlxGa1-x-rAs, x having a highest value between 0.05≤x≤0.4, and y, z, r, w≤0.1; a second emitter cap layer on the first emitter cap layer and formed of an N-type III-V semiconductor material; and an ohmic contact layer on the second emitter cap layer and formed of an N-type III-V semiconductor material.

6. 发明申请

US20210021104A1 VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) HAVING ALGAASP LAYER WITH COMPRESSIVE STRAIN 有权
公开(公告)号：US20210021104A1
公开(公告)日：2021-01-21
申请号：US16931541
申请日：2020-07-17
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
IPC分类号： H01S5/34 , H01S5/183
摘要： Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.

7. 发明授权

US09853136B2 Directed epitaxial heterojunction bipolar transistor 有权
公开(公告)号：US09853136B2
公开(公告)日：2017-12-26
申请号：US14535431
申请日：2014-11-07
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Yu-Chung Chin , Chao-Hsing Huang , Min-Nan Tseng
IPC分类号： H01L21/8252 , H01L29/737 , H01L27/07 , H01L29/205 , H01L29/08 , H01L29/201 , H01L27/06
CPC分类号： H01L29/7378 , H01L21/8252 , H01L27/0623 , H01L27/0705 , H01L27/0716 , H01L29/0821 , H01L29/201 , H01L29/205
摘要： A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.

8. 发明申请

US20160049502A1 HETEROJUNCTION BIPOLAR TRANSISTOR WITH BLOCKING LAYER STRUCTURE 审中-公开
标题翻译：具有阻塞层结构的异相双极晶体管
公开(公告)号：US20160049502A1
公开(公告)日：2016-02-18
申请号：US14712968
申请日：2015-05-15
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Yu-Chung Chin , Chao-Hsing Huang , Hung-Chi Hsiao
IPC分类号： H01L29/737 , H01L29/207 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/778 , H01L29/205 , H01L29/15
CPC分类号： H01L29/7371 , H01L27/0605 , H01L27/0623 , H01L29/0821 , H01L29/155 , H01L29/205 , H01L29/207 , H01L29/66318
摘要： Provided is a heterojunction bipolar transistor (HBT), including a GaAs substrate; a subcollector layer stacked on the GaAs substrate, wherein a part of or all of the subcollector layer is formed by N-type group III-V semiconductors doped by at least Te and/or Se; a blocking layer structure directly or indirectly stacked on the subcollector layer, and formed by N-type group III-V semiconductors doped by at least group IV elements, a collector layer stacked on the blocking layer structure, and formed by N-type group III-V semiconductors; a base layer stacked on the collector layer, and formed by P-type group III-V semiconductors; an emitter layer stacked on the base layer and formed by N-type group III-V semiconductors; an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors; and an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.
摘要翻译：提供了包括GaAs衬底的异质结双极晶体管（HBT）; 层叠在所述GaAs衬底上的子集电极层，其中所述子集电极层的一部分或全部由通过至少Te和/或Se掺杂的N型III-V族半导体形成; 直接或间接堆叠在子集电极层上的阻挡层结构，由至少IV族元素掺杂的N型III-V族半导体形成，堆叠在阻挡层结构上的集电极层，并由N型III族 -V半导体; 堆叠在集电极层上的基极层，由P型III-V族半导体形成; 由N型III-V族半导体层叠在基极层上的发射极层; 发射极帽层，堆叠在发射极层上，由N型III-V族半导体形成; 以及堆叠在发射极帽层上并由N型III-V族半导体形成的欧姆接触层。

9. 发明授权

US09130027B2 High electron mobility bipolar transistor 有权
标题翻译：高电子迁移双极晶体管
公开(公告)号：US09130027B2
公开(公告)日：2015-09-08
申请号：US14326673
申请日：2014-07-09
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Yu-Chung Chin , Chao-Hsing Huang
IPC分类号： H01L21/02 , H01L29/06 , H01L29/20 , H01L29/66 , H01L29/778 , H01L29/737 , H01L29/08 , H01L29/205
CPC分类号： H01L29/778 , H01L29/0821 , H01L29/20 , H01L29/2003 , H01L29/205 , H01L29/7371 , H01L29/7378 , H01L29/7785
摘要： A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 5×1017 cm−3 and 1×1020 cm−3, and/or the oxygen concentration within 5×1018 cm−3 and 1×1020 cm−3.The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.
摘要翻译：公开了一种高电子迁移率双极晶体管，其包括从底部到顶部顺序层叠的基板，伪晶体高电子迁移率晶体管（pHEMT）子结构，子集电极/分离层和异质结双极晶体管（HBT）子结构。将亚集电极/分离层和pHEMT子结构组合形成pHEMT，并将亚集电极/分离层和HBT子结构组合形成HBT。子集电极/分离层中的碳浓度在5×1017cm-3和1×1020cm-3之间，和/或氧浓度在5×1018cm-3和1×1020cm-3之间。在外延生长过程中的晶格是稳定的，并且可以防止掺杂剂，元素，空位或缺陷扩散到相邻层中，从而改善迁移率降低和电阻增加的问题，并且保持稳定性制造过程。

10. 发明申请

US20140054647A1 HIGH ELECTRON MOBILITY BIPOLAR TRANSISTOR 有权
标题翻译：高电子移动双极晶体管
公开(公告)号：US20140054647A1
公开(公告)日：2014-02-27
申请号：US13910241
申请日：2013-06-05
申请人： Visual Photonics Epitaxy Co., Ltd.
发明人： Yu-Chung Chin , Chao-Hsing Huang
IPC分类号： H01L29/737
CPC分类号： H01L29/778 , H01L29/0821 , H01L29/20 , H01L29/2003 , H01L29/205 , H01L29/7371 , H01L29/7378 , H01L29/7785
摘要： A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 5×1017 cm−3 and 1×1020 cm−3, and/or the oxygen concentration within 5×1018 cm−3 and 1×1020 cm−3. The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.
摘要翻译：公开了一种高电子迁移率双极晶体管，其包括从底部到顶部顺序层叠的基板，伪晶体高电子迁移率晶体管（pHEMT）子结构，子集电极/分离层和异质结双极晶体管（HBT）子结构。将亚集电极/分离层和pHEMT子结构组合形成pHEMT，并将亚集电极/分离层和HBT子结构组合形成HBT。子集电极/分离层中的碳浓度在5×1017cm-3和1×1020cm-3之间，和/或氧浓度在5×1018cm-3和1×1020cm-3之间。在外延生长过程中的晶格是稳定的，并且可以防止掺杂剂，元素，空位或缺陷扩散到相邻层中，从而改善迁移率降低和电阻增加的问题，并且保持稳定性制造过程。

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