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1. 发明授权

US08858943B2 Antigen binding proteins 有权
标题翻译：抗原结合蛋白
公开(公告)号：US08858943B2
公开(公告)日：2014-10-14
申请号：US12679917
申请日：2008-09-23
申请人： Stephen Anthony Burbidge , Ian Richard Catchpole , Jonathan Henry Ellis , Susannah Karen Ford , Volker Germaschewski , Umesh Kumar , Karen Louise Philpott , Peter Ernest Soden
发明人： Stephen Anthony Burbidge , Ian Richard Catchpole , Jonathan Henry Ellis , Susannah Karen Ford , Volker Germaschewski , Umesh Kumar , Karen Louise Philpott , Peter Ernest Soden
IPC分类号： A61K39/395 , A61K35/30 , A61K35/44 , C07K16/18 , A61K39/00
CPC分类号： C07K16/18 , A61K2039/505 , C07K2317/24 , C07K2317/55 , C07K2317/567
摘要： The present invention relates to methods of treating diseases or disorders affecting the eye or optic nerve characterized by elevated β-amyloid levels or β-amyloid deposits, particularly age related macular degeneration and glaucoma type diseases and β-amyloid dependent cataract formation, with antigen binding proteins that bind β-amyloid peptide and in particular human β-amyloid peptide.
摘要翻译：本发明涉及治疗影响眼睛或视神经的疾病或病症的方法，其特征在于升高的淀粉样蛋白水平或淀粉样蛋白沉积物，特别是年龄相关性黄斑变性和青光眼型疾病和淀粉样蛋白依赖性白内障形成，具有结合β-淀粉样蛋白肽的特异性抗原结合蛋白，特别是人和淀粉样蛋白肽。

2. 发明授权

US07925643B2 Encoding and decoding of XML document using statistical tree representing XSD defining XML document 失效
标题翻译：使用表示XSD定义XML文档的统计树对XML文档进行编码和解码
公开(公告)号：US07925643B2
公开(公告)日：2011-04-12
申请号：US12037417
申请日：2008-06-08
申请人： Umesh Kumar B. Balegar , Rohit Shetty
发明人： Umesh Kumar B. Balegar , Rohit Shetty
IPC分类号： G06F7/00
CPC分类号： G06F17/2247 , G06F17/227
摘要： A statistical tree representing an eXtensible Markup Language (XML) Schema document (XSD) is generated. The statistical tree captures information defined by the XSD by representing elements, attributes, and enumerations of the XSD as branches, nodes, and leaves of the statistical tree. The statistical tree has bits corresponding to nodes of the statistical tree. An XML document defined by the XSD is adaptively encoded, or compressed, as a number of bits based on the statistical tree that has been generated. The number of bits encoding the XML document are decoded, or decompressed, to yield the XML document also based on the statistical tree that has been generated.
摘要翻译：生成表示可扩展标记语言（XML）模式文档（XSD）的统计树。统计树通过将XSD的元素，属性和枚举表示为统计树的分支，节点和树叶来捕获由XSD定义的信息。统计树具有与统计树的节点对应的位。由XSD定义的XML文档基于已经生成的统计树被自适应地编码或压缩为多个位。编码XML文档的比特数被解码或解压缩，以产生XML文档，同时也基于已经生成的统计树。

3. 发明申请

US20090307244A1 ENCODING AND DECODING OF XML DOCUMENT USING STATISTICAL TREE REPRESENTING XSD DEFINING XML DOCUMENT 失效
标题翻译：使用统计表来编码和解码XML文档XSD定义XML文档
公开(公告)号：US20090307244A1
公开(公告)日：2009-12-10
申请号：US12037417
申请日：2008-06-08
申请人： Umesh Kumar B. Balegar , Rohit Shetty
发明人： Umesh Kumar B. Balegar , Rohit Shetty
IPC分类号： G06F17/30 , G06F7/06
CPC分类号： G06F17/2247 , G06F17/227
摘要： A statistical tree representing an extensible Markup Language (XML) Schema document (XSD) is generated. The statistical tree captures information defined by the XSD by representing elements, attributes, and enumerations of the XSD as branches, nodes, and leaves of the statistical tree. The statistical tree has bits corresponding to nodes of the statistical tree. An XML document defined by the XSD is adaptively encoded, or compressed, as a number of bits based on the statistical tree that has been generated. The number of bits encoding the XML document are decoded, or decompressed, to yield the XML document also based on the statistical tree that has been generated.
摘要翻译：生成表示可扩展标记语言（XML）模式文档（XSD）的统计树。统计树通过将XSD的元素，属性和枚举表示为统计树的分支，节点和树叶来捕获由XSD定义的信息。统计树具有与统计树的节点对应的位。由XSD定义的XML文档基于已经生成的统计树被自适应地编码或压缩为多个位。编码XML文档的比特数被解码或解压缩，以产生XML文档，同时也基于已经生成的统计树。

4. 发明申请

US20080120608A1 GENERATING A STATISTICAL TREE FOR ENCODING/DECODING AN XML DOCUMENT 失效
标题翻译：生成用于编码/解码XML文档的统计树
公开(公告)号：US20080120608A1
公开(公告)日：2008-05-22
申请号：US11561043
申请日：2006-11-17
申请人： Rohit Shetty , Umesh Kumar Balaraj
发明人： Rohit Shetty , Umesh Kumar Balaraj
IPC分类号： G06F9/45 , G06F17/00
CPC分类号： G06F17/2229 , G06F17/2247
摘要： A method and apparatus for generating a statistical tree representing an extensible markup language Schema (XSD) is disclosed. Components of the XSD are prioritized according to predefined rules. A root node representing the XSD is created. Pairs of child nodes are generated from the root node. Each pair comprises at least one genuine node, and each pair of generated child nodes is appended to a parent node which is a genuine node. The path to each of the child nodes from a respective parent genuine node is represented with a binary sequence. At least one genuine node is allocated to a corresponding component of the XSD, the allocation being based on the prioritization of the component. Methods, apparatus and computer program products for generating a statistical tree representing XSD, for encoding an extensible markup language (XML) document utilizing a statistical tree representing XSD, and for decoding an XML document represented by a binary encoded sequence also are disclosed.
摘要翻译：公开了一种用于生成表示可扩展标记语言模式（XSD）的统计树的方法和装置。 XSD的组件根据预定义的规则进行优先排序。创建表示XSD的根节点。从根节点生成成对的子节点。每对包括至少一个正版节点，并且每对生成的子节点被附加到作为真实节点的父节点。来自相应父母节点的每个子节点的路径用二进制序列表示。至少一个正版节点分配给XSD的相应组件，该分配基于组件的优先级。还公开了用于生成表示XSD的统计树的方法，装置和计算机程序产品，用于使用表示XSD的统计树对可扩展标记语言（XML）文档进行编码，以及用于对由二进制编码序列表示的XML文档进行解码。

5. 发明申请

US20080113496A1 METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION 有权
标题翻译：高品质N面GaN，InN，AlN及其合金的金属有机化学气相沉积的异相生长方法
公开(公告)号：US20080113496A1
公开(公告)日：2008-05-15
申请号：US11855591
申请日：2007-09-14
申请人： Stacia Keller , Umesh Kumar Mishra , Nicholas A. Fichtenbaum
发明人： Stacia Keller , Umesh Kumar Mishra , Nicholas A. Fichtenbaum
IPC分类号： H01L21/36
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0257 , H01L21/0262
摘要： Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
摘要翻译：公开了通过MOCVD生长的N面GaN薄膜的平滑，高质量薄膜异质外延生长的方法。使用错误取向的衬底并且可能使衬底氮化使得能够生长平滑的N面GaN和其他III族氮化物膜，如本文所公开的。本发明还避免了使得N面GaN材料不适合于器件应用的典型的大（母体尺寸）六角形特征。本发明允许平滑，高质量的膜的生长，这使得N面装置的发展成为可能。

6. 发明授权

US06261931B1 High quality, semi-insulating gallium nitride and method and system for forming same 失效
标题翻译：高品质半绝缘氮化镓及其形成方法及系统
公开(公告)号：US06261931B1
公开(公告)日：2001-07-17
申请号：US09100921
申请日：1998-06-19
申请人： Stacia Keller , Bernd Peter Keller , Umesh Kumar Mishra , Steven P. DenBaars
发明人： Stacia Keller , Bernd Peter Keller , Umesh Kumar Mishra , Steven P. DenBaars
IPC分类号： H01L2120
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： A method for growing high-quality gallium nitride over a substrate is disclosed. The method comprises growing first layer with a high dislocation density over the substrate, a second layer having a high number of point defects and a reduced dislocation density as compared to the dislocation density of the first layer over the first layer, and a third layer having a reduced number of point defects as compared to the second layer over the second layer. The resulting gallium nitride is semi-insulating, which inhibits parasitic current flow and parasitic capacitive effects, yet it not so insulating that electron flow in adjacent transistor channels is inhibited.
摘要翻译：公开了一种在衬底上生长高质量氮化镓的方法。该方法包括在衬底上生长具有高位错密度的第一层，与第一层上的第一层的位错密度相比，具有大量点缺陷的第二层和减少的位错密度，以及具有与第二层上的第二层相比减少数量的点缺陷。所得到的氮化镓是半绝缘的，其抑制寄生电流和寄生电容效应，但是它不会使相邻晶体管沟道中的电子流阻碍而绝缘。

7. 发明授权

US06169049A Solution coated hydrothermal BaTiO3 for low-temperature firing 失效
标题翻译：溶液涂层水热BaTiO3用于低温烧制
公开(公告)号：US06169049A
公开(公告)日：2001-01-02
申请号：US08847613
申请日：1997-04-28
申请人： John P. Witham , Clive A. Randall , Umesh Kumar , Ulagaraj Selvaraj , Sea-Fue Wang , Joseph P. Dougherty
发明人： John P. Witham , Clive A. Randall , Umesh Kumar , Ulagaraj Selvaraj , Sea-Fue Wang , Joseph P. Dougherty
IPC分类号： C04B35468
CPC分类号： C04B35/62222 , C04B35/468
摘要： Hydrothermal BaTiO3 crystallites were coated with Bismuth solutions prepared from Bismuth metal-organics and anhydrous solvents. The Bismuth metal-organics were Bi 2-ethylhexanoate and Bi-neodecanoate. Bismuth oxide was also used as a comparison to the Bismuth solutions. BaTiO3 ceramics with either 3.0 wt % equivalent Bismuth oxide or 5.0 wt % equivalent Bismuth oxide were made by sintering the compacts between 700° C. and 1000° C. BaTiO3 ceramics that were coated by Bi-neodecanoate densified >90% theoretical as low as 800° C. for 3.0 wt % equivalent Bi2O3. Average grain sizes of 0.2-0.4 &mgr;m were observed for Bi-coated BaTiO3 ceramics, for sintering temperatures below 950° C. Dielectric K versus temperature measurements of Bismuth-coated BaTiO3 ceramics, sintered in the lower temperature ranges, showed consistently superior dielectric characteristics.
摘要翻译：用由铋金属有机物和无水溶剂制备的铋溶液涂覆水热BaTiO 3微晶。铋金属有机物为Bi 2-乙基己酸酯和双 - 新癸酸酯。氧化铋也用作与铋溶液的比较。通过烧结700℃和1000℃之间的压块来制备具有3.0重量％当量氧化铋或5.0重量％当量氧化铋的BaTiO 3陶瓷。由新癸酸酯涂覆的BaTiO 3陶瓷致密化> 90％理论值低至 800℃，3.0重量％当量Bi 2 O 3。对于Bi包覆的BaTiO 3陶瓷，烧结温度低于950℃，观察到平均晶粒尺寸为0.2-0.4μm。在较低温度范围内烧结的铋包覆的BaTiO 3陶瓷的介电K与温度测量显示出一贯优异的介电特性。

8. 发明授权

US5872031A Enhancement-depletion logic based on gaas mosfets 失效
标题翻译：基于gaas mosfets的增强耗尽逻辑
公开(公告)号：US5872031A
公开(公告)日：1999-02-16
申请号：US757875
申请日：1996-11-27
申请人： Umesh Kumar Mishra , Primit A. Parikh
发明人： Umesh Kumar Mishra , Primit A. Parikh
IPC分类号： H01L21/28 , H01L21/30 , H01L21/336 , H01L21/8252 , H01L27/06 , H01L29/51 , H01L29/78 , H01L29/80 , H01L21/8238
CPC分类号： H01L29/517 , H01L21/28264 , H01L21/3006 , H01L21/8252 , H01L27/0605 , H01L29/66522 , H01L29/7838 , H01L29/802
摘要： The present invention discloses a method of forming an oxide layer on a layer of gallium arsenide, including the steps of depositing a layer of aluminum arsenide on the layer of gallium arsenide, of exposing the layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide during the exposing step, so as to ensure enhanced electrical properties in the aluminum oxide. The method is used to provide an insulating gate layer for a GaAs field effect transistor by forming an oxide layer on GaAs and controlling excess arsenic so as to maintain high resistivity in the oxide layer and to avoid the formation of interface surface states which degrade transistor performance. The method is also used to provide complementary metal-insulator-semiconductor logic devices based on the gallium arsenide field effect transistor.
摘要翻译：本发明公开了一种在砷化镓层上形成氧化物层的方法，包括以下步骤：在砷化镓层上沉积砷化铝层，将砷化铝层暴露于氧化气体混合物，使得砷化铝被氧化成氧化铝，并且在曝光步骤期间控制在氧化铝中释放的过量的砷，以确保氧化铝中的电性能增强。该方法用于通过在GaAs上形成氧化物层并且控制多余的砷以在氧化物层中保持高电阻率并避免形成降低晶体管性能的界面表面状态来为GaAs场效应晶体管提供绝缘栅层。该方法还用于提供基于砷化镓场效应晶体管的互补金属 - 绝缘体 - 半导体逻辑器件。

9. 发明授权

US5780355A UV assisted gallium nitride growth 失效
标题翻译： UV辅助氮化镓生长
公开(公告)号：US5780355A
公开(公告)日：1998-07-14
申请号：US757873
申请日：1996-11-27
申请人： Umesh Kumar Mishra , Steven P. DenBaars , Stacia Keller
发明人： Umesh Kumar Mishra , Steven P. DenBaars , Stacia Keller
IPC分类号： H01L21/205 , H01L33/00
CPC分类号： H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for producing Group III nitride films with high indium content and superior optical quality. The Group III nitride film will produce light in the ultraviolet, blue, green, yellow, and red spectral regions. This will enable fabrication of full-color displays and produce a reliable white light source. A metal organic chemical vapor deposition (MOCVD) process in combination with a photochemical process reduces the growth temperature required to produce optical quality Group III nitride films.
摘要翻译：一种生产具有高铟含量和优异光学质量的III族氮化物薄膜的方法。 III族氮化物膜将在紫外线，蓝色，绿色，黄色和红色光谱区域产生光。这将使得能够制造全彩色显示器并产生可靠的白光源。与光化学工艺结合的金属有机化学气相沉积（MOCVD）工艺降低了生产光学质量III族氮化物膜所需的生长温度。

10. 发明申请

US20120288845A1 ASSESSMENT FOR EFFICIENT LEARNING AND TOP PERFORMANCE IN COMPETITIVE EXAMS - SYSTEM, METHOD, USER INTERFACE AND A COMPUTER APPLICATION 审中-公开
标题翻译：有效学习评估和竞争性考试中的顶级绩效 - 系统，方法，用户界面和计算机应用
公开(公告)号：US20120288845A1
公开(公告)日：2012-11-15
申请号：US13509743
申请日：2010-11-15
申请人： Umesh Kumar GL
发明人： Umesh Kumar GL
IPC分类号： G09B7/00
CPC分类号： G09B7/06
摘要： The invention comprises a computer assisted answer recording method for e-learning, or e-assessment comprising: (a) recording an answer choice by the user of the said method for an objective type question by an answer selection submitting input action or by a marking action made on an said answer choices' answer choice input receiving element, the said action being integrated concurrently with the same action with quantified parameters of the said users' means of arriving at an answer choice and reasons, feelings, thoughts & needs recorded simultaneously by the said user as and when they have arisen in the mind of the said user while solving the said question & choosing the said answer choice, and (b) feeding the said integrated input to a computer programme that would analyse the results and transform them into statistical indices of performance parameters in a quantified way in reference to the said question and said test information and display the said statistical indices to the user.
摘要翻译：本发明包括一种用于电子学习或电子评估的计算机辅助应答记录方法，包括：（a）通过提交输入动作或标记的答案选择记录用户对所述目标类型问题的答案选择在所述答案选择的答复选择输入接收元素上作出的动作，所述动作与所述用户的达成一个答案选择的手段的量化参数同时具有相同的动作并入，并且同时记录的原因，感觉，想法和需求当所述用户在解决所述问题并选择所述答案选择时出现在所述用户的头脑中，并且（b）将所述综合输入馈送到计算机程序，计算机程序将分析结果并将其转换成参考所述问题和所述测试信息以量化方式的性能参数的统计指标，并将所述统计指标显示给我们呃

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