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1. 发明授权

US5177501A Electrooptical recording device 失效
标题翻译：电子记录装置
公开(公告)号：US5177501A
公开(公告)日：1993-01-05
申请号：US604642
申请日：1990-10-29
申请人： Ulrich Seyfried
发明人： Ulrich Seyfried
IPC分类号： B41J2/445 , B41J2/447 , B41J2/46 , G02F1/055 , H04N1/46
CPC分类号： B41J2/447
摘要： An electro-optical recording device for use in dot matrix color recording which uses three identically configured arrays of light gates is described. The three identically configured light gate arrays are arranged relative to one another at such an angle that their optical axes intersect in the recording plane.
摘要翻译：描述了使用三个相同配置的光门阵列的点阵彩色记录用电光记录装置。三个相同配置的光栅阵列相对于彼此以它们的光轴在记录平面中相交的角度布置。

2. 发明授权

US4782705A Strain gauge 失效
标题翻译：应变计
公开(公告)号：US4782705A
公开(公告)日：1988-11-08
申请号：US73355
申请日：1987-07-10
申请人： Horst Hoffmann , Peter Kersten , Hans Volz , Ulrich Seyfried
发明人： Horst Hoffmann , Peter Kersten , Hans Volz , Ulrich Seyfried
IPC分类号： G01B7/00 , G01B7/16 , G01B7/24 , G01L1/12 , G01L1/22 , G01L1/00 , H01L43/06
CPC分类号： G01L1/2287 , G01B7/24 , G01L1/12 , G01L1/125
摘要： A strain gauge comprised of a premagnetized ferromagnetic film wherein any change in length of the film is converted into a planar Hall voltage by employing the property of magnetostriction and the planar Hall effect. Alternately, a change in the length of the film can also be measured as a change in electric conductivity by employing the properties of magnetostriction and magnetoresistance. The strain gauge is deposited on a substrate by thin-film techniques and has a very high sensitivity.
摘要翻译：应变仪由预磁化的铁磁膜组成，其中通过采用磁致伸缩特性和平面霍尔效应将膜长度的任何变化转换为平面霍尔电压。或者，也可以通过采用磁致伸缩和磁阻的性质来测量膜的长度的变化，作为电导率的变化。应变仪通过薄膜技术沉积在基板上，并具有非常高的灵敏度。

3. 发明授权

US4884453A Strain gauge 失效
标题翻译：应变计
公开(公告)号：US4884453A
公开(公告)日：1989-12-05
申请号：US222799
申请日：1988-07-22
申请人： Horst Hoffmann , Peter Kersten , Hans Volz , Ulrich Seyfried
发明人： Horst Hoffmann , Peter Kersten , Hans Volz , Ulrich Seyfried
IPC分类号： G01B7/00 , G01B7/16 , G01B7/24 , G01L1/12 , G01L1/22
CPC分类号： G01L1/2287 , G01B7/24 , G01L1/12 , G01L1/125
摘要： A strain gauge comprised of a premagnetized ferromagnetic film wherein any change in length of the film can be measured by employing the properties of magnetostriction and magnetoresistance. The strain gauge is deposited on a substrate by thin-film techniques and has a very high sensitivity. Preferably, two electrically insulated strips parallel strips of amorphous metal film have (in the absence of strain) respective directions of magnetization aligned antiparallel to one another and are connected electrically at one end. Such an arrangement facilitates the reversion of the magnetization back to its easy direction when the stress causing the strain is removed.
摘要翻译：应变仪由预磁化的铁磁膜组成，其中膜的长度的任何变化可以通过采用磁致伸缩和磁阻的性质来测量。应变仪通过薄膜技术沉积在基板上，并具有非常高的灵敏度。优选地，两个电绝缘条带非晶金属膜的平行条具有（在不存在应变的情况下）各自的磁化方向彼此反平行排列并且在一端电连接。当去除引起应变的应力时，这种布置有助于磁化的回复回到其容易的方向。

4. 发明授权

US07593703B2 Frequency switch for multiband power amplifier applications and multiband/multistandard power amplifier module 有权
标题翻译：多频段功率放大器应用和多频段/多标准功率放大器模块的频率开关
公开(公告)号：US07593703B2
公开(公告)日：2009-09-22
申请号：US11589826
申请日：2006-10-31
申请人： Dirk Wiegner , Tobias Naβ , Ulrich Seyfried
发明人： Dirk Wiegner , Tobias Naβ , Ulrich Seyfried
IPC分类号： H04B1/04 , H04Q7/20
CPC分类号： H03F3/72 , H01P1/213 , H03F3/19 , H03F2200/111 , H03F2200/429 , H03F2203/7209
摘要： A frequency switch (1), in particular for use in a multiband/multistandard power amplifier module (11, 17), comprising at least two output ports, a first output port (7) being arranged within a first output path (8) and a second output port (9) being arranged within a second output path (10), said output ports (7, 9) being connected with an input port (6) via said output paths (8, 10), each output path (8, 10) being provided with at least one RF block (2a, 2b, 2c, 2d), each RF-block (2a, 2b, 2c, 2d) comprising a capacitor, (3a, 3b, 3c, 3d) a switching element (5a, 5b, 5c, 5d) and a quarterwave section, wherein for each RF-block (2a, 2b, 2c, 2d) a predetermined frequency band is selected and the length of said quarterwave section is matched to said selected frequency band in order to block incoming signals in said selected frequency band if the switching element (5a, 5b, 5c, 5d) of the corresponding RF-block (2a, 2b, 2c, 2d) is switched on. Thus a frequency switch for usage with a multiband power amplifier can be realised which allows selection of different frequency bands with reduced power loss.
摘要翻译：特别是用于多频段/多标准功率放大器模块（11,17）中的频率开关（1），包括至少两个输出端口，第一输出端口（7）布置在第一输出路径（8）内，以及第二输出端口（9）布置在第二输出路径（10）内，所述输出端口（7,9）经由所述输出路径（8,10）与输入端口（6）连接，每个输出路径（8），10）设置有至少一个RF块（2a，2b，2c，2d），每个RF块（2a，2b，2c，2d）包括电容器（3a，3b，3c，3d）（5a，5b，5c，5d）和四分之一波段，其中对于每个RF块（2a，2b，2c，2d），选择预定频带，并且所述四分之一波段的长度与所述选定的频带匹配如果对应的RF块（2a，2b，2c，2d）的开关元件（5a，5b，5c，5d）被接通，则阻止所述所选频带中的输入信号。因此，可以实现使用多频带功率放大器的频率开关，其允许以降低的功率损耗来选择不同的频带。

5. 发明申请

US20070182483A1 POWER AMPLIFIER BIAS PROTECTION FOR DEPLETION MODE TRANSISTOR 审中-公开
标题翻译：用于放电模式晶体管的功率放大器偏置保护
公开(公告)号：US20070182483A1
公开(公告)日：2007-08-09
申请号：US11626346
申请日：2007-01-23
申请人： Ulrich Seyfried , Dirk Wiegner
发明人： Ulrich Seyfried , Dirk Wiegner
IPC分类号： H03G3/20
CPC分类号： H03F1/52 , H03F1/30 , H03F1/523 , H03F3/189 , H03F2200/15 , H03F2200/471 , H03F2200/507
摘要： A power amplifier bias protection for a depletion mode transistor is achieved according to the invention with a threshold voltage adaptation connected to the Gate of the depletion mode transistor. That threshold voltage adaptation controls a supply voltage switch for the Drain of the depletion mode transistor such that when the threshold voltage adaptation measures a voltage applied to that Gate outside a tolerable predefined range, then it activates the supply voltage switch to disconnect the Drain DC feed line. The input of the supply voltage switch is connected to the Drain voltage source of the depletion mode transistor and the output of the supply voltage switch is connected to the Drain DC feed line.
摘要翻译：根据本发明实现了耗尽型晶体管的功率放大器偏置保护，其中阈值电压适配连接到耗尽型晶体管的栅极。该阈值电压自适应控制用于耗尽型晶体管的漏极的电源电压开关，使得当阈值电压自适应测量施加到该门外的电压在可容许的预定义范围之外时，其激活电源电压开关以断开漏极直流馈电线。电源电压开关的输入连接到耗尽型晶体管的漏极电压源，电源电压开关的输出端连接到漏极直流馈电线。

6. 发明申请

US20070155345A1 Frequency switch for multiband power amplifier applications and multiband/multistandard power amplifier module 有权
标题翻译：多频段功率放大器应用和多频段/多标准功率放大器模块的频率开关
公开(公告)号：US20070155345A1
公开(公告)日：2007-07-05
申请号：US11589826
申请日：2006-10-31
申请人： Dirk Wiegner , Tobias Nass , Ulrich Seyfried
发明人： Dirk Wiegner , Tobias Nass , Ulrich Seyfried
IPC分类号： H04B1/44
CPC分类号： H03F3/72 , H01P1/213 , H03F3/19 , H03F2200/111 , H03F2200/429 , H03F2203/7209
摘要： A frequency switch (1), in particular for use in a multiband/multistandard power amplifier module (11, 17), comprising at least two output ports, a first output port (7) being arranged within a first output path (8) and a second output port (9) being arranged within a second output path (10), said output ports (7, 9) being connected with an input port (6) via said output paths (8, 10), each output path (8, 10) being provided with at least one RF block (2a, 2b, 2c, 2d), each RF-block (2a, 2b, 2c, 2d) comprising a capacitor, (3a, 3b, 3c, 3d) a switching element (5a, 5b, 5c, 5d) and a quaterwave section, wherein for each RF-block (2a, 2b, 2c, 2d) a predetermined frequency band is selected and the length of said quaterwave section is matched to said selected frequency band in order to block incoming signals in said selected frequency band if the switching element (5a, 5b, 5c, 5d) of the corresponding RF-block (2a, 2b, 2c, 2d) is switched on. Thus a frequency switch for usage with a multiband power amplifier can be realised which allows selection of different frequency bands with reduced power loss.
摘要翻译：特别是用于多频段/多标准功率放大器模块（11,17）中的频率开关（1），包括至少两个输出端口，第一输出端口（7）布置在第一输出路径（8）内，以及第二输出端口（9）布置在第二输出路径（10）内，所述输出端口（7,9）经由所述输出路径（8,10）与输入端口（6）连接，每个输出路径（8），10）设置有至少一个RF块（2a，2b，2c，2d），每个RF块（2a，2b，2c，2d）包括电容器（3a， 3 b，3 c，3 d）开关元件（5a，5b，5c，5d）和四频波段，其中对于每个RF块（2a，2b，2c，2d）a 如果相应的开关元件（5a，5b，5c，5d）的开关元件（5a，5b，5c，5d）被选择，则所述四频波段的长度与所述选择的频带相匹配，以便阻止所述选择的频带中的输入信号 RF块（2a，2b，2c，2d）是开关编辑。因此，可以实现使用多频带功率放大器的频率开关，其允许以降低的功率损耗来选择不同的频带。

7. 发明授权

US4668914A Circular, amorphous metal, Hall effect magnetic field sensor with circumferentially spaced electrodes 失效
标题翻译：圆形，非晶金属，霍尔效应磁场传感器，具有周向隔开的电极
公开(公告)号：US4668914A
公开(公告)日：1987-05-26
申请号：US679664
申请日：1984-12-07
申请人： Peter Kersten , Hans Volz , Ulrich Seyfried
发明人： Peter Kersten , Hans Volz , Ulrich Seyfried
IPC分类号： G01B7/00 , G01B7/02 , G01R33/02 , G01R33/07 , H01L43/06 , H01L43/10 , G01R33/06 , G01B7/30
CPC分类号： G01R33/07 , H01L43/06 , H01L43/10
摘要： A magnetic field sensor is disclosed with which the direction of a magnetic field can be determined by using the planar Hall effect. An active layer of the sensor is made of a ferromagnetic amorphous metal which is magnetically isotropic. Thus, the magnetization in the active layer always has the direction of an external magnetic field. The developed planar Hall voltage is a measure of the direction of the magnetic field.
摘要翻译：公开了一种磁场传感器，可以通过使用平面霍尔效应来确定磁场的方向。传感器的有源层由磁性各向同性的铁磁非晶金属制成。因此，有源层中的磁化总是具有外部磁场的方向。开发的平面霍尔电压是磁场方向的量度。

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