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    • 1. 发明申请
    • METHOD FOR PRODUCING A THIN SINGLE CRYSTAL SILICON HAVING LARGE SURFACE AREA
    • 生产具有大面积面积的单晶硅的方法
    • US20130143407A1
    • 2013-06-06
    • US13414355
    • 2012-03-07
    • CHING-FUH LINTZU-CHING LINSHU-JIA SYU
    • CHING-FUH LINTZU-CHING LINSHU-JIA SYU
    • H01L21/311B82Y40/00
    • B81C99/008B81B2207/056B81C1/0038B81C2201/0194
    • The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.
    • 本发明涉及一种具有大表面积的薄单晶硅的制造方法,特别涉及在硅衬底(或晶片)上制造硅微结构和纳米结构的方法,并将硅微结构和纳米结构从 硅衬底(或晶片)。 在该方法中,通过在硅晶片上沉积金属催化剂,垂直蚀刻衬底,横向蚀刻衬底的步骤,简单地从衬底中提取和转移硅微结构和纳米结构的薄单晶硅。 然后,处理衬底的表面,例如平坦化衬底的表面,以再循环衬底以重复制造薄的单晶硅。 因此,可以充分利用基板,可以实现成本降低的目的,并且可以提高应用。