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1. 发明申请

US20100176408A1 LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY 有权
标题翻译：具有高照明效率的发光二极管
公开(公告)号：US20100176408A1
公开(公告)日：2010-07-15
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

2. 发明授权

US07745837B2 Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same 有权
标题翻译：具有高光提取效率的半导体发光器件及其制造方法
公开(公告)号：US07745837B2
公开(公告)日：2010-06-29
申请号：US12000064
申请日：2007-12-07
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L29/167
CPC分类号： H01L33/10 , H01L33/02 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，第一半导体材料层，多层结构和欧姆电极结构。基板具有形成在第一上表面上的第一上表面和多个凹部。第一半导体材料层形成在基板的第一上表面上并具有第二上表面。多层结构形成在第一半导体材料层的第二上表面上并且包括发光区域。欧姆电极结构形成在多层结构上。特别地，第一半导体材料层的折射率与基板和多层结构的最底层的折射率不同。

3. 发明申请

US20100059773A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20100059773A1
公开(公告)日：2010-03-11
申请号：US12327367
申请日：2008-12-03
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI , SHU HUI LIN
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI , SHU HUI LIN
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

4. 发明申请

US20090308319A1 WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
标题翻译：使用它的波浪载体和外延机
公开(公告)号：US20090308319A1
公开(公告)日：2009-12-17
申请号：US12194013
申请日：2008-08-19
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C30B25/12
摘要： A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.
摘要翻译：晶片载体包括以分解的方式定位在基座的顶表面上的基座和屏蔽板。基座的顶表面构造成保持多个晶片，并且屏蔽板具有暴露晶片的多个开口。特别地，屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分，以防止反应气体进行化学反应，直接在基底的表面上产生反应物。因此，基底与化学反应隔离，在进行下一个制造工艺之前不需要更换基底，也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

5. 发明申请

US20090200667A1 OHMIC CONTACT FILM IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件中的OHMIC接触膜
公开(公告)号：US20090200667A1
公开(公告)日：2009-08-13
申请号：US12426061
申请日：2009-04-17
申请人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L23/532
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
摘要翻译：本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。根据本发明优选实施方案的欧姆接触膜的组成由通式MxQzNy表示，其中M表示II族化学元素，Q表示IV族化学元素，N表示V基团化学元素， = x <= 3,1 <= y <= 3,1 <= z <= 3，x和y和z是摩尔数。

6. 发明申请

US20090057694A1 LIGHT OPTOELECTRONIC DEVICE AND FORMING METHOD THEREOF 有权
标题翻译：光电光学装置及其形成方法
公开(公告)号：US20090057694A1
公开(公告)日：2009-03-05
申请号：US12061623
申请日：2008-04-02
申请人： Tzong-Liang TSAI
发明人： Tzong-Liang TSAI
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/04 , H01L33/10 , H01L33/105 , H01L33/32
摘要： The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided on the first nitrogen-containing compound layer, a second nitrogen-containing compound layer is provided on the II/V group compound layer, and a third nitrogen-containing compound layer is provided on the second nitrogen-containing compound layer, an epi-stacked stricture with a multi-layer structure is formed on the buffer layer, which includes a first semiconductor conductive layer is formed on the buffer layer, an active layer is formed on the first semiconductor conductive layer, a multi-layer structure is formed between the first semiconductor conductive layer and the active layer, and a second semiconductor conductive layer is formed on the active layer.
摘要翻译：本发明提供具有外延叠层结构的光电器件，其包括衬底，形成在衬底上的缓冲层，其中缓冲层包括第一含氮化合物层，II / V族化合物层设置在第一含氮化合物层上，在II / V族化合物层上设置第二含氮化合物层，在第二含氮化合物层上设置第三含氮化合物层，在缓冲层上形成具有多层结构的叠层结构，其包括在缓冲层上形成第一半导体导电层，在第一半导体导电层上形成有源层，在第一半导体层之间形成多层结构，第一半导体导电层和有源层，以及在有源层上形成第二半导体导电层。

7. 发明授权

US07498607B2 Epi-structure with uneven multi-quantum well and the method thereof 有权
标题翻译：具有不均匀多量子阱的Epi结构及其方法
公开(公告)号：US07498607B2
公开(公告)日：2009-03-03
申请号：US11798750
申请日：2007-05-16
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333 , H01S2304/04
摘要： An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.
摘要翻译：发光装置的Epi结构，包括：在基板上形成的第一半导体导电层; 在具有多量子阱（MQW）的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射，以形成不均匀的多量子阱。

8. 发明申请

US20090008624A1 Optoelectronic device 审中-公开
标题翻译：光电器件
公开(公告)号：US20090008624A1
公开(公告)日：2009-01-08
申请号：US11984062
申请日：2007-11-13
申请人： Tzong-Liang Tsai , Yu-Chu Li
发明人： Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/24 , H01L33/32
摘要： The present invention provides an optoelectronic device, which includes a first electrode, a substrate on the first electrode, and a buffer layer on the substrate. The buffer layer further includes a first gallium nitride based compound layer on the substrate, a II-V group compound layer on the first gallium nitride based compound layer, a second gallium nitride based compound layer on the II-V group compound layer, and a third gallium nitride based compound layer on the second gallium nitride based compound layer. Then, a first semiconductor conductive layer is formed on the buffer layer; an active layer is formed on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a second semiconductor conductive layer on the active layer; a transparent conductive layer on the second semiconductor conductive layer; and a second electrode on the transparent conductive layer.
摘要翻译：本发明提供一种光电器件，其包括第一电极，第一电极上的衬底和衬底上的缓冲层。缓冲层还包括在基板上的第一氮化镓基化合物层，第一氮化镓基化合物层上的II-V族化合物层，II-V族化合物层上的第二氮化镓基化合物层和第二氮化镓基化合物层上的第三氮化镓基化合物层。然后，在缓冲层上形成第一半导体导电层; 在第一半导体导电层上形成有源层，其中有源层是不均匀的多量子阱; 在所述有源层上的第二半导体导电层; 第二半导体层上的透明导电层; 和在透明导电层上的第二电极。

9. 发明申请

US20080283820A1 LED packaged structure and applications of LED as light source 有权
标题翻译： LED封装结构和应用LED作为光源
公开(公告)号：US20080283820A1
公开(公告)日：2008-11-20
申请号：US11984730
申请日：2007-11-21
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , F21K9/27 , F21Y2103/10 , F21Y2115/10 , H01L33/06
摘要： LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.
摘要翻译：公开了LED封装结构及其应用，其特征在于：在具有多量子阱的第一半导体导电层上形成LED或LED封装结构中的有源层; 并且在所述有源层上形成第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和有源层之间被散射，以形成不均匀的多量子阱。

10. 发明申请

US20080277678A1 Light emitting device and method for making the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20080277678A1
公开(公告)日：2008-11-13
申请号：US11801155
申请日：2007-05-08
申请人： Yu-Chu Li , Chiung-Chi Tsai , Tzong-Liang Tsai , Su-Hui Lin
发明人： Yu-Chu Li , Chiung-Chi Tsai , Tzong-Liang Tsai , Su-Hui Lin
IPC分类号： H01L29/22 , H01L21/00 , H01L27/15
CPC分类号： H01L33/22 , H01L33/38
摘要： A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.
摘要翻译：一种制造发光器件的方法包括：在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料，使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料，以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构，以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。

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