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1. 发明授权

US07504351B2 ITO sputtering target 有权
标题翻译： ITO溅射靶
公开(公告)号：US07504351B2
公开(公告)日：2009-03-17
申请号：US10569068
申请日：2004-08-04
申请人： Toshiya Kurihara
发明人： Toshiya Kurihara
IPC分类号： C04B35/01 , C04B35/65 , C01G19/02
CPC分类号： C23C14/3414
摘要： Provided are an ITO sputtering target wherein the number of particles having a grain diameter of 100 nm or greater exposed in the ITO sputtering target as a result of royal water etching or sputter etching is 1 particle/μm2, and an ITO sputtering target having a density of 7.12 g/cm3 or greater capable of improving the sputtering performance, in particular inhibiting the generation of arcing, suppressing the generation of defects in the ITO film caused by such arcing, and thereby effectively inhibiting the deterioration of the ITO film.
摘要翻译：提供一种ITO溅射靶，其中作为皇家水蚀刻或溅射蚀刻的结果，在ITO溅射靶中暴露的粒径为100nm以上的粒子的数量为1个/ m 2，ITO密度为能够提高溅射性能的7.12g / cm 3以上，特别是抑制电弧的产生，抑制由这种电弧引起的ITO膜的缺陷的产生，从而有效地抑制ITO膜的劣化。

2. 发明申请

US20060289303A1 Ito sputtering target 有权
标题翻译：伊藤溅射靶
公开(公告)号：US20060289303A1
公开(公告)日：2006-12-28
申请号：US10569068
申请日：2004-08-04
申请人： Toshiya Kurihara
发明人： Toshiya Kurihara
IPC分类号： C23C14/00
CPC分类号： C23C14/3414
摘要： Provided are an ITO sputtering target wherein the number of particles having a grain diameter of 100 nm or greater exposed in the ITO sputtering target as a result of royal water etching or sputter etching is 1 particle/μm2, and an ITO sputtering target having a density of 7.12 g/cm3 or greater capable of improving the sputtering performance, in particular inhibiting the generation of arcing, suppressing the generation of defects in the ITO film caused by such arcing, and thereby effectively inhibiting the deterioration of the ITO film.
摘要翻译：提供一种ITO溅射靶，其中作为皇家水蚀刻或溅射蚀刻的结果，在ITO溅射靶中暴露的粒径为100nm以上的粒子的数量为1个/μm2，以及能够提高溅射性能的密度为7.12g / cm 3以上的ITO溅射靶，特别是抑制电弧的产生，抑制由ITO引起的ITO膜的缺陷的产生电弧，从而有效地抑制ITO膜的劣化。

3. 发明授权

US5103561A Grass trimmer 失效
标题翻译：草修剪器
公开(公告)号：US5103561A
公开(公告)日：1992-04-14
申请号：US710982
申请日：1991-06-06
申请人： Kazuo Harada , Toshiya Kurihara
发明人： Kazuo Harada , Toshiya Kurihara
IPC分类号： A01D34/76 , A01D34/73
CPC分类号： A01D34/90 , A01D34/73
摘要： A grass trimmer having a cutting blade mounting head portion in which an output is disposed, and a cutting blade mounting member is provided for mounting a cutting blade. The output shaft has a relative rotation preventing engagement portion formed on a lower portion thereof, and a fitting centering portion formed on a portion of the output shaft which is immediately above and adjacent to the relative rotation preventing engagement portion. The cutting blade mounting member has a central hole extending therethrough, and the inner periphery of the central hole has a fitting portion and a coaxial engagement portion, both formed thereon, the fitting portion being capable of fitting on the relative rotation preventing engagement portion of the output shaft, and the coaxial engagement portion being engageable with the fitting centering portion of the output shaft.
摘要翻译：具有设置有输出的切割刀片安装头部的割草机和设置用于安装切割刀片的切割刀片安装部件。输出轴具有形成在其下部的相对旋转防止接合部和形成在输出轴的紧邻相对防止旋转接合部的上方并与其相邻的部分上的嵌合定心部。切割刀片安装构件具有贯穿其的中心孔，并且中心孔的内周具有形成在其上的嵌合部和同轴接合部，所述嵌合部能够嵌合在所述嵌合部和所述相对旋转防止接合部输出轴，并且同轴接合部分可与输出轴的装配中心部分接合。

4. 发明申请

US20120270065A1 MULTI-LAYERED STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：多层结构及其制造方法
公开(公告)号：US20120270065A1
公开(公告)日：2012-10-25
申请号：US13386984
申请日：2011-05-12
申请人： Takamasa Maekawa , Toshiya Kurihara , Takashi Kosho
发明人： Takamasa Maekawa , Toshiya Kurihara , Takashi Kosho
IPC分类号： B32B15/04 , B05D1/36
CPC分类号： C23C14/3414 , C23C14/3407 , C23C14/564 , Y10T428/12674 , Y10T428/12681 , Y10T428/263 , Y10T428/31678
摘要： The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises: a backing plate, an impurity diffusion prevention layer, comprising thin film consisting of one or more metals selected from Fe, W, Ta, Te, Nb, Mo, S and Si, formed on the backing plate, and an indium target, formed on the impurity diffusion prevention layer.
摘要翻译：本发明提供了一种多层结构，其中杂质污染到铟靶中被极好地防止，及其制造方法。多层结构包括：背板，杂质扩散防止层，其包含由形成在背板上的一种或多种选自Fe，W，Ta，Te，Nb，Mo，S和Si的金属组成的薄膜，和形成在杂质扩散防止层上的铟靶。

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