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1. 发明授权

US06343262B1 Method for providing twenty-four hour maintenance of a measuring instrument using a plurality of servicing centers 失效
标题翻译：使用多个维修中心提供二十四小时维护测量仪器的方法
公开(公告)号：US06343262B1
公开(公告)日：2002-01-29
申请号：US09210672
申请日：1998-12-14
申请人： Toshihiko Uno , Masatomo Ishikura
发明人： Toshihiko Uno , Masatomo Ishikura
IPC分类号： G06F1100
CPC分类号： H04L43/00
摘要： A method for providing twenty-four hour maintenance of a measuring instrument by outputting the data from the measuring instrument to a measuring computer, and if maintenance is needed, transmitting the data to a maintenance computer at one of a plurality of servicing centers, judging whether or not that servicing center is capable of performing the maintenance, and if it is not capable of performing the maintenance, selecting another servicing center that is capable of performing the maintenance and transmitting the measuring instrument's data to one of the maintenance computers at that servicing center, which will then perform the maintenance to the measuring instrument.
摘要翻译：一种通过将测量仪器的数据输出到测量计算机来提供二十四小时维护测量仪器的方法，如果需要维护，则将数据传送到多个维修中心之一的维护计算机，判断是否或者不是维修中心能够进行维护，并且如果不能进行维护，则选择能够执行维护的另一个维修中心，并将测量仪器的数据发送到维修中心的维护计算机之一，然后对测量仪器进行维护。

2. 发明授权

US4817413A Method of using an opto-acoustic apparatus for measuring concentration of gas 失效
标题翻译：使用光声装置测量气体浓度的方法
公开(公告)号：US4817413A
公开(公告)日：1989-04-04
申请号：US838564
申请日：1986-03-11
申请人： Ichiro Asano , Toshihiko Uno
发明人： Ichiro Asano , Toshihiko Uno
IPC分类号： G01J1/16 , G01J1/44 , G01N21/00 , G01N21/17 , G01N29/00 , G01N21/85
CPC分类号： G01N29/2425 , G01N21/1702 , G01N29/00 , G01J1/1626 , G01J2001/4242 , G01N2021/1704 , G01N2021/1708 , G01N2291/02809 , G01N2291/0427
摘要： A method of using an opto-acoustic apparatus for measuring, in an environment containing extraneous noise, the concentration of a gas in a mixture of gases or of particulates in a gas. The method is constituted by the steps of providing a measuring opto-acoustic cell having gas inlet and gas outlet for receiving and discharging a gas containing a particulate or a mixture of gases containing a gas the concentration of which is to be measured, directing laser rays from a laser ray generating device into the opto-acoustic cell, placing a chopper in the path of the laser rays between the device and the cell and operating the chopper for chopping the laser rays at a frequency corresponding to the resonant frequency of the cell, providing a narrow band microphone having a resonator with a narrow resonance frequency range including the resonant frequency of the cell and sufficiently narrow to exclude unwanted noise signals from the environment in which the cell is located, placing the microphone on the cell for detecting the sound signal generated by changes in the internal pressure of the cell, and determining from the sound signal the concentration of the gas in the mixture of gases or the concentration of the particulates in the gas.
摘要翻译：一种使用光声装置的方法，用于在包含杂质噪声的环境中测量气体或气体中的微粒混合物中的气体浓度。该方法由以下步骤构成：提供具有气体入口和气体出口的测量光声单元，用于接收和排出含有气体的气体，所述气体或气体混合物含有待测量浓度的气体，从激光射线产生装置到光声单元中，将切割器放置在装置和单元之间的激光路径中，并以与单元的共振频率相对应的频率操作切割器以切割激光，提供具有谐振器的窄带麦克风，该谐振器具有包括该单元的谐振频率的窄谐振频率范围，并且足够窄以排除来自该单元所在环境的不需要的噪声信号，将麦克风放置在用于检测该声音信号的单元由电池的内部压力的变化产生的，并且根据声音信号确定混合物中气体的浓度气体的浓度或气体中的微粒浓度。

3. 发明授权

US07170134B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07170134B2
公开(公告)日：2007-01-30
申请号：US10994358
申请日：2004-11-23
申请人： Yasuhiro Takehana , Toshihiko Uno
发明人： Yasuhiro Takehana , Toshihiko Uno
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/66659 , H01L29/0634 , H01L29/0847 , H01L29/1045 , H01L29/7835
摘要： P-type buried regions 104a and 104b are formed in an extended drain region 102 formed in a P-type semiconductor substrate 110. An N-type buried region 113 is formed between the P-type buried regions 104a and 104b. An N-type impurity concentration of the N-type buried region 113 along a G–G′ plane is low in the vicinity of boundaries between the N-type buried region 113 and the P-type buried regions 104a and 104b and is increased from the boundaries to an inside of the N-type buried region 113.
摘要翻译： P型埋入区域104a和104b形成在形成在P型半导体衬底110中的延伸漏极区域102中。在P型掩埋区域104a和104b之间形成N型掩埋区域113。 N型埋入区域113沿着GG'面的N型杂质浓度在N型掩埋区域113与P型掩埋区域104a和104b之间的边界附近较低，并且从到N型掩埋区域113的内部的边界。

4. 发明申请

US20060055064A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060055064A1
公开(公告)日：2006-03-16
申请号：US11204052
申请日：2005-08-16
申请人： Saichirou Kaneko , Kazuyuki Sawada , Toshihiko Uno
发明人： Saichirou Kaneko , Kazuyuki Sawada , Toshihiko Uno
IPC分类号： H01L23/28
CPC分类号： H01L23/3135 , H01L23/3192 , H01L2224/48465 , H01L2924/13091 , H01L2924/3025
摘要： An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region 100, 102 is filled with the sealing resin to put the sealing resin into direct contact with the source electrode 70 and the drain electrode 80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film 90 in a high temperature and high humidity atmosphere are discharged to the source electrode 70 and the drain electrode 80 via the ion-through region 100, 102 and thus do not influence an N−-type extended drain region 30. Therefore, the drain breakdown voltage can be improved.
摘要翻译：在源电极70和漏极电极80上的钝化膜90中设置有离子通过区域100,102作为第一开口。钝化膜90涂覆有密封树脂以封装半导体器件。此时，通过密封树脂填充离子通过区域100,102，使密封树脂与源极电极70和漏极电极80直接接触。利用该结构，可动离子积聚在密封件具有钝化膜90的高温高湿气氛中的树脂通过离子通过区域100,102而被排出到源电极70和漏电极80，因此不会影响N + 型扩展漏区30.因此，可以提高漏极击穿电压。

5. 发明授权

US06294133B1 Multiple detecting apparatus for physical phenomenon and/or chemical phenomenon 失效
标题翻译：用于物理现象和/或化学现象的多重检测装置
公开(公告)号：US06294133B1
公开(公告)日：2001-09-25
申请号：US09228185
申请日：1999-01-12
申请人： Kazuaki Sawada , Katsuhiko Tomita , Tsuyoshi Nakanishi , Hiroki Tanabe , Susumu Mimura , Toshihiko Uno
发明人： Kazuaki Sawada , Katsuhiko Tomita , Tsuyoshi Nakanishi , Hiroki Tanabe , Susumu Mimura , Toshihiko Uno
IPC分类号： G01N2700
CPC分类号： G01K7/015 , G01K1/045
摘要： A detector assembly for detecting a plurality of different properties at the same location at the same time is provided by integrating onto a single semiconductor substrate a first detector unit for measuring a first property and a second detector unit for measuring a second property. The first and second detector units can share, for example, a common element, such as a sensor device that can provide electrical output signals representative of, respectively, the first property and the second property. The common element can include a diaphragm with a pyroelectric element to provide a measurement of temperature and pressure.
摘要翻译：通过在单个半导体衬底上集成用于测量第一属性的第一检测器单元和用于测量第二属性的第二检测器单元，来提供用于同时检测相同位置处的多个不同性质的检测器组件。第一和第二检测器单元可以共享例如公共元件，例如能够分别提供代表第一属性和第二属性的电输出信号的传感器装置。公共元件可以包括具有热电元件的隔膜以提供温度和压力的测量。

6. 发明授权

US5693945A Gas analyzer 失效
标题翻译：气体分析仪
公开(公告)号：US5693945A
公开(公告)日：1997-12-02
申请号：US508816
申请日：1995-07-28
申请人： Shigeyuki Akiyama , Masahiko Fujiwara , Fujio Koga , Naohito Shimizu , Toshihiko Uno , Aritoshi Yoneda
发明人： Shigeyuki Akiyama , Masahiko Fujiwara , Fujio Koga , Naohito Shimizu , Toshihiko Uno , Aritoshi Yoneda
IPC分类号： G01N21/33 , G01N21/35 , G01N21/61
CPC分类号： G01N21/3504 , G01N21/33
摘要： An ultraviolet light source is provided on one end of a cell into which a sample gas is introduced. A beam splitter for dividing beams which have been transmitted through the cell into two optical paths is provided on the other end of the cell. A first detector is provided in one optical path, and a second detector is provided in the other optical path. A gas filter filled with a component to be measured is positioned between the detectors and beam splitter so that a concentration of the component to be measured may be obtained on the basis of a difference between the output of the first detector and the product of the output of the second detector and an appointed constant. Influences resulting from components coexisting in the sample gas are reduced. Alternatively, an infrared light source may be provided on one end of a sample cell. A gas filter filled with a gas the same as the gas to be measured is provided at the other end of the sample cell. A reference filter filled with a non-absorbing gas is positioned parallel to the gas filter. A beam splitter and a detector are sequentially disposed downstream from the gas filter, and a mirror is disposed downstream from the reference filter. The mirror is positioned such that beams which passed through the reference filter may be directed to the beam splitter and, subsequently, the detector.
摘要翻译：在其中引入样品气体的单元的一端设置紫外光源。用于将已经通过单元传输的光束分成两个光路的分束器设置在电池的另一端。第一检测器设置在一个光路中，第二检测器设置在另一个光路中。填充有要测量的部件的气体过滤器位于检测器和分束器之间，使得可以基于第一检测器的输出与输出的乘积之间的差异来获得要测量的部件的浓度的第二个检测器和一个指定的常数。减少了样品气体中共存的成分的影响。或者，可以在样品池的一端上设置红外光源。填充有与待测气体相同的气体的气体过滤器设置在样品池的另一端。填充有非吸收气体的参考过滤器平行于气体过滤器定位。分流器和检测器顺序地布置在气体过滤器的下游，并且反射镜设置在参考过滤器的下游。反射镜被定位成使得通过参考滤光器的光束可以被引导到分束器，并且随后被引导到检测器。

7. 发明申请

US20070090482A1 High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same 有权
标题翻译：高耐压半导体开关器件和使用其的开关式电源装置
公开(公告)号：US20070090482A1
公开(公告)日：2007-04-26
申请号：US11582441
申请日：2006-10-18
申请人： Saichirou Kaneko , Tetsuji Yamashita , Toshihiko Uno
发明人： Saichirou Kaneko , Tetsuji Yamashita , Toshihiko Uno
IPC分类号： H01L23/58
CPC分类号： H01L29/7393 , H01L29/063 , H01L2924/0002 , H01L2924/00
摘要： A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.
摘要翻译：高耐压半导体开关器件包括第二导电类型的复位区域; 形成为与复原区域相邻的第一导电类型的基极区域; 所述第二导电类型的发射极/源极区域形成在所述基极区域中以与所述固体区域间隔开; 形成为覆盖所述发射极/源极区域的一部分和所述再生区域的一部分的栅电极; 所述第二导电类型的漏极区域形成在所述复原区域中以与所述基极区域间隔开; 以及形成在所述再生区域中的与所述基底区域间隔开的所述第一导电类型的集电极区域。此外，它包括连接到集电极区域和漏极区域的电极以及连接到基极区域和发射极/源极区域的电极。

8. 发明申请

US20050127450A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050127450A1
公开(公告)日：2005-06-16
申请号：US10994358
申请日：2004-11-23
申请人： Yasuhiro Takehana , Toshihiko Uno
发明人： Yasuhiro Takehana , Toshihiko Uno
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/76
CPC分类号： H01L29/66659 , H01L29/0634 , H01L29/0847 , H01L29/1045 , H01L29/7835
摘要： P-type buried regions 104a and 104b are formed in an extended drain region 102 formed in a P-type semiconductor substrate 110. An N-type buried region 113 is formed between the P-type buried regions 104a and 104b. An N-type impurity concentration of the N-type buried region 113 along a G-G′ plane is low in the vicinity of boundaries between the N-type buried region 113 and the P-type buried regions 104a and 104b and is increased from the boundaries to an inside of the N-type buried region 113.
摘要翻译： P型埋入区域104a和104b形成在形成在P型半导体衬底110中的延伸漏极区域102中。在P型掩埋区域104a和104b之间形成N型掩埋区域113。 N型埋入区域113沿着GG'面的N型杂质浓度在N型掩埋区域113与P型掩埋区域104a和104b之间的边界附近较低，并且从到N型掩埋区域113的内部的边界。

9. 发明授权

US4500868A Automotive driving instruction system 失效
标题翻译：汽车驾驶指导系统
公开(公告)号：US4500868A
公开(公告)日：1985-02-19
申请号：US324488
申请日：1981-11-24
申请人： Naoki Tokitsu , Toshitaka Fujiwara , Toranosuke Kato , Toshihiko Uno
发明人： Naoki Tokitsu , Toshitaka Fujiwara , Toranosuke Kato , Toshihiko Uno
IPC分类号： G01C23/00 , B60K23/00 , B60K35/00 , G01C21/00 , G07C5/00 , G07C5/08 , G09B19/16 , B60Q1/00
CPC分类号： G09B19/167 , B60K35/00 , G07C5/0858
摘要： An automotive driving instruction system which comprises a plurality of sensors including a vehicle speed sensor etc. mounted at various parts of the automobile, a computer for reading the outputs of the sensors for calculating the driving conditions of the automobile, and a replaceable external memory unit. The computer calculates a plurality of values representing the driving conditions of the automobile on the basis of the outputs of the sensors, and controls to generate an alarm when any of the values thus calculated becomes to corresponding one of a plurality of predetermined values. Also, the accumulated value of the alarms and the respective accumulated values of the alarms for each of causes of alarming are stored in the external memory unit. At the end of a driving, the external memory unit is demounted, so that any habits of the driver is determined from the data stored in the external memory unit to contribute to the correction thereof.
摘要翻译：一种汽车驾驶指令系统，其包括安装在汽车的各个部分的包括车速传感器等的多个传感器，用于读取用于计算汽车的驾驶状况的传感器的输出的计算机，以及可替换的外部存储单元。计算机基于传感器的输出计算表示汽车的驾驶状况的多个值，并且当这些计算的任何值变为多个预定值中的相应一个时，进行控制以产生报警。此外，报警的累积值和各种报警原因的报警的累积值存储在外部存储单元中。在驱动结束时，拆卸外部存储器单元，从而根据存储在外部存储器单元中的数据来确定驾驶员的任何习惯以有助于其校正。

10. 发明授权

US07759696B2 High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same 有权
标题翻译：高耐压半导体开关器件和使用其的开关式电源装置
公开(公告)号：US07759696B2
公开(公告)日：2010-07-20
申请号：US11582441
申请日：2006-10-18
申请人： Saichirou Kaneko , Tetsuji Yamashita , Toshihiko Uno
发明人： Saichirou Kaneko , Tetsuji Yamashita , Toshihiko Uno
IPC分类号： H01L29/735 , H01L29/78
CPC分类号： H01L29/7393 , H01L29/063 , H01L2924/0002 , H01L2924/00
摘要： A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.
摘要翻译：高耐压半导体开关器件包括第二导电类型的复位区域; 形成为与复原区域相邻的第一导电类型的基极区域; 所述第二导电类型的发射极/源极区域形成在所述基极区域中以与所述固体区域间隔开; 形成为覆盖所述发射极/源极区域的一部分和所述再生区域的一部分的栅电极; 所述第二导电类型的漏极区域形成在所述复原区域中以与所述基极区域间隔开; 以及形成在所述再生区域中的与所述基底区域间隔开的所述第一导电类型的集电极区域。此外，它包括连接到集电极区域和漏极区域的电极以及连接到基极区域和发射极/源极区域的电极。

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