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    • 2. 发明申请
    • ELECTRODES LOCATED AT STORAGE CAPACITOR WIRING IN ACTIVE MATRIX SUBSTRATE
    • 电极位于有源矩阵基板中的存储电容器接线
    • US20110025937A1
    • 2011-02-03
    • US12897344
    • 2010-10-04
    • Toshifumi YAGIToshihide TsubataMasanori TakeuchiYuhko Hisada
    • Toshifumi YAGIToshihide TsubataMasanori TakeuchiYuhko Hisada
    • G02F1/1343
    • G02F1/136259G02F2001/136263H01L27/124H01L27/1255
    • The active matrix substrate of the present invention is the active matrix substrate in which the faulty connection in a storage capacitor element as caused by a short circuit between storage capacitor electrodes due to a conductive foreign material or a pinhole in an insulating layer or by a short circuit between a data signal line and a storage capacitor upper electrode can be repaired with ease. The active matrix substrate of the present invention is the active matrix substrate comprising a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode, wherein the storage capacitor upper electrode comprises at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
    • 本发明的有源矩阵基板是有源矩阵基板,其中由于导电异物或绝缘层中的针孔或由短路引起的存储电容器电极之间的短路而导致的存储电容器元件中的故障连接 可以容易地修复数据信号线和存储电容器上电极之间的电路。 本发明的有源矩阵基板是有源矩阵基板,包括设置在扫描信号线与基板上的数据信号线的交叉点的薄膜晶体管,晶体管的栅电极连接到扫描信号 线,其源电极连接到数据信号线,其漏电极连接到互连电极,以及存储电容器上电极,至少经由绝缘层与辅助电容布线图案相对设置,并且连接到 互连电极和像素电极,其中所述存储电容器上电极在与所述辅助电容器布线图案相对的区域中包括至少三个分割电极。