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1. 发明申请

US20120042822A1 METHOD FOR FABRICATING SiC SUBSTRATE 审中-公开
标题翻译： SiC基板的制备方法
公开(公告)号：US20120042822A1
公开(公告)日：2012-02-23
申请号：US13266278
申请日：2009-04-30
申请人： Shinkichi Hamada , Nobuhiko Nakamura , Toru Matsunami
发明人： Shinkichi Hamada , Nobuhiko Nakamura , Toru Matsunami
IPC分类号： C30B19/04
CPC分类号： C30B29/36 , C30B19/04
摘要： A method for fabricating a SiC substrate using metastable solvent epitaxy comprises a Si evaporation step of evaporating a Si melt at an intermediate temperature between a SiC crystal growth temperature and a Si melting point after a crystal growth step of growing an SiC crystal with a predetermined film thickness on the surface of the SiC substrate at the SiC crystal growth temperature. In the method for fabricating the SiC substrate, the ambient pressure in the crystal growth step is higher than the saturated vapor pressure of the Si melt, and the ambient pressure in the Si evaporation step is lower than the saturated vapor pressure of the Si melt. Single-crystal SiC with no large irregularities on the surface thereof can be obtained by using the method.
摘要翻译：使用亚稳溶剂外延制造SiC衬底的方法包括在具有预定膜生长SiC晶体的晶体生长步骤之后，在SiC晶体生长温度和Si熔点之间的中间温度下蒸发Si熔体的Si蒸发步骤在SiC晶体生长温度下在SiC衬底的表面上的厚度。在制造SiC衬底的方法中，晶体生长步骤中的环境压力高于Si熔体的饱和蒸气压，并且Si蒸发步骤中的环境压力低于Si熔体的饱和蒸气压。通过使用该方法可以获得其表面上没有大的凹凸的单晶SiC。

2. 发明申请

US20100119849A1 SIC EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME 失效
标题翻译： SIC外延基板及其制造方法
公开(公告)号：US20100119849A1
公开(公告)日：2010-05-13
申请号：US12452084
申请日：2008-03-11
申请人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
发明人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
IPC分类号： B32B9/04 , C30B23/02
CPC分类号： C30B25/02 , C30B13/00 , C30B25/18 , C30B25/20 , C30B29/06 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/02628 , H01L33/0054
摘要： In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.
摘要翻译：在本发明的一个实施例中，制造了包括单晶SiC衬底的单晶SiC外延衬底; 由在单晶SiC衬底上形成的第一SiC外延膜制成的缓冲层; 以及由形成在缓冲层上的第二SiC外延膜制成的有源层。通过将一组单晶SiC衬底，碳源板和具有预定厚度的金属Si熔融层热处理并插入在单晶SiC衬底和金属Si熔融层之间，从而外延生长缓冲层，在单晶SiC衬底上生长单晶SiC。通过气相生长法在缓冲层上外延生长单晶SiC生长活性层。这允许制造包括缺陷低的高质量单晶SiC活性层的单晶SiC外延衬底。

3. 发明授权

US08585821B2 SiC epitaxial substrate and method for producing the same 失效
标题翻译： SiC外延基板及其制造方法
公开(公告)号：US08585821B2
公开(公告)日：2013-11-19
申请号：US12452084
申请日：2008-03-11
申请人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
发明人： Nobuhiko Nakamura , Toru Matsunami , Kimito Nishikawa
IPC分类号： C30B25/02 , C30B25/18 , C30B29/36 , C30B13/00 , C30B29/06
CPC分类号： C30B25/02 , C30B13/00 , C30B25/18 , C30B25/20 , C30B29/06 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/02628 , H01L33/0054
摘要： In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.
摘要翻译：在本发明的一个实施例中，制造了包括单晶SiC衬底的单晶SiC外延衬底; 由在单晶SiC衬底上形成的第一SiC外延膜制成的缓冲层; 以及由形成在缓冲层上的第二SiC外延膜制成的有源层。通过将一组单晶SiC衬底，碳源板和具有预定厚度的金属Si熔融层热处理并插入在单晶SiC衬底和金属Si熔融层之间，从而外延生长缓冲层，在单晶SiC衬底上生长单晶SiC。通过气相生长法在缓冲层上外延生长单晶SiC生长活性层。这允许制造包括缺陷低的高质量单晶SiC活性层的单晶SiC外延衬底。

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