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1. 发明授权

US4908921A Method of making capacitive pressure sensors 失效
标题翻译：制造电容式压力传感器的方法
公开(公告)号：US4908921A
公开(公告)日：1990-03-20
申请号：US227848
申请日：1988-08-03
申请人： Frank Chen , Tony W. Rogers , David E. Blackaby
发明人： Frank Chen , Tony W. Rogers , David E. Blackaby
IPC分类号： G01L9/00
CPC分类号： G01L9/0073 , Y10T29/43
摘要： A method of batch producing capacitive pressure sensors in which a sheet of semiconductive material is provided with an insulating layer 4 on one side thereof and a plurality of cavities 1 are formed in the semiconductive sheet by removing part of the insulating layer and part of the semiconductive sheet. Simultaneously with producing the cavities in the semiconductive sheet, at least one recess is provided, again by removing part of the insulating layer and part of the semiconductive sheet. The semiconductive sheet is then bonded to a non-conductive substrate 3 to form a composite sheet with the insulating layer 4 in contact with the substrate, the substrate being provided with a number of electrodes 5 corresponding to the number of cavities in the semiconductive sheet and arranged such that they are located within the cavities on bonding of the semiconductive sheet to the substrate, each electrode having an electrical feedthrough 6 extending therefrom and terminating at a point outside of the associated cavity but within an associated recess in the semiconductive sheet. The bonded composite sheet is patterned with a series of grid lines to delineate the plurality of pressure sensors and the semiconductive sheet is scored from the side opposite that provided with the insulating layer so as to break into each recess to reveal, at a stage in the method of production, the terminal end of each electrical feedthrough 6, and the bonded composite sheet is diced along the grid lines so as to separate the pressure sensors one from another.

2. 发明授权

US5041900A Semiconductor device having sealed electrical feedthrough 失效
标题翻译：具有密封电馈通的半导体器件
公开(公告)号：US5041900A
公开(公告)日：1991-08-20
申请号：US366556
申请日：1989-06-15
申请人： Frank Chen , Tony W. Rogers , David E. Blackaby
发明人： Frank Chen , Tony W. Rogers , David E. Blackaby
IPC分类号： B81B7/00 , G01L9/00 , H01L21/58
CPC分类号： B81B7/0077 , G01L9/0042 , G01L9/0073 , H01L24/26 , H01L24/83 , G01B2210/64 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/01051 , H01L2924/01057 , H01L2924/0106 , H01L2924/01067 , H01L2924/01072 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/30105 , Y10T29/43 , Y10T29/435
摘要： A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.

3. 发明授权

US4849374A Method of sealing an electrical feedthrough in a semiconductor device 失效
标题翻译：在半导体器件中密封电馈通的方法
公开(公告)号：US4849374A
公开(公告)日：1989-07-18
申请号：US227849
申请日：1988-08-03
申请人： Frank Chen , Tony W. Rogers , David E. Blackaby
发明人： Frank Chen , Tony W. Rogers , David E. Blackaby
IPC分类号： B81B7/00 , G01L9/00 , H01L21/58
CPC分类号： B81B7/0077 , G01L9/0042 , G01L9/0073 , H01L24/26 , H01L24/83 , G01B2210/64 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/01051 , H01L2924/01057 , H01L2924/0106 , H01L2924/01067 , H01L2924/01072 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/30105 , Y10T29/43 , Y10T29/435
摘要： A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.

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