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1. 发明授权

US5692002A Buried heterostructure semiconductor laser fabricated on a p-type substrate 失效
标题翻译：埋在p型衬底上的异质结构半导体激光器
公开(公告)号：US5692002A
公开(公告)日：1997-11-25
申请号：US531314
申请日：1995-09-20
申请人： Tomoko Mizutani
发明人： Tomoko Mizutani
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/026 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2277
摘要： A buried heterostructure semiconductor laser formed on a substrate having a first semiconductor of p-type conductivity has a mesa-striped active layer region having a height extending from a first p-type semiconductor layer at the foot of the mesa to a n-type cladding layer on the top of the mesa. On both sides of the mesa-striped region, a second p-type semiconductor layer, a first n-type semiconductor layer, a third p-type semiconductor layer, and a second semiconductor layer having a band gap smaller than that of the other layers except the active layer are sequentially formed from the substrate side. Additionally, the entire structure is further buried with a n-type semiconductor layer. The second semiconductor layer may be inserted in between the second p-type semiconductor layer and the first n-type semiconductor layer as well. Furthermore, the second semiconductor layer may be of a semiconductor material with lower carrier concentration doping than the other layers except the active layer, which is usually undoped. In an alternative configuration, the two sides of the mesa structure may form a channel into which the aforementioned layers will be buried.
摘要翻译：形成在具有p型导电体的第一半导体的基板上的掩埋异质结构半导体激光器具有台阶条形有源层区域，其具有从台面的底部处的第一p型半导体层延伸到n型包层层的顶部的台面。在台面条纹区域的两侧，具有比其他层的带隙小的带隙的第二p型半导体层，第一n型半导体层，第三p型半导体层和第二半导体层除了有源层从衬底侧依次形成。此外，整个结构进一步用n型半导体层掩埋。也可以在第二p型半导体层和第一n型半导体层之间插入第二半导体层。此外，第二半导体层可以是具有比通常不掺杂的有源层以外的除了其它层以外的较低载流子浓度掺杂的半导体材料。在替代配置中，台面结构的两侧可以形成上述层将被埋入的通道。

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