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1. 发明授权

US08913172B2 Information processing apparatus and computer-readable storage medium recording information processing program 有权
标题翻译：信息处理装置和计算机可读存储介质记录信息处理程序
公开(公告)号：US08913172B2
公开(公告)日：2014-12-16
申请号：US13156529
申请日：2011-06-09
申请人： Yoshihiro Matsushima , Tomohiro Kawase
发明人： Yoshihiro Matsushima , Tomohiro Kawase
IPC分类号： H04N5/222 , G06F9/445 , H04N101/00
CPC分类号： G06F3/0482 , G06F3/04842 , G06F3/0488 , G06F9/445 , H04N5/23293 , H04N2101/00 , Y02D10/43
摘要： An information processing apparatus capable of being opened and closed includes storage means, display means, and taken image display control means. The storage means stores a taken image therein. The display means has a display screen provided in a surface which is located inside when the information processing apparatus is closed and which is located outside when the information processing apparatus is opened. The taken image display control means displays a taken image on the display screen, and changes a taken image to be displayed between before and after closing and opening the information processing apparatus when the information processing apparatus is closed and opened again.
摘要翻译：能够打开和关闭的信息处理装置包括存储装置，显示装置和拍摄图像显示控制装置。存储装置将拍摄图像存储在其中。显示装置具有设置在当信息处理装置关闭时位于内部并且当信息处理装置打开时位于外部的表面中的显示屏幕。拍摄图像显示控制装置在显示屏幕上显示拍摄图像，并且当信息处理装置再次闭合并打开时，在关闭和打开信息处理装置之前和之后改变要显示的拍摄图像。

2. 发明授权

US08276093B2 Computer-readable storage medium having object display order changing program stored therein and apparatus 有权
标题翻译：具有存储在其中的对象显示顺序改变程序的计算机可读存储介质和装置
公开(公告)号：US08276093B2
公开(公告)日：2012-09-25
申请号：US12544557
申请日：2009-08-20
申请人： Yoshihiro Matsushima , Tomohiro Kawase
发明人： Yoshihiro Matsushima , Tomohiro Kawase
IPC分类号： G06F15/00 , G06F13/00
CPC分类号： G06F3/0482 , G06F9/451
摘要： An icon line is displayed on a screen. A display order for the icon line can be changed by using a switch input unit enabling a direction input. When an input in a first direction is made, objects are scrolled so as to sequentially display each object at a specific position or the objects are scrolled across the specific position. When an input in the second direction is made, an object positioned at the specific position is saved at a saving position or an object positioned at the saving position is positioned at the specific position. Thus, a user is allowed to easily change the display order in which a plurality of objects are displayed on a screen.
摘要翻译：屏幕上显示图标线。可以通过使用能够进行方向输入的开关输入单元来改变图标线的显示顺序。当进行第一方向的输入时，滚动对象以便在特定位置顺序地显示每个对象，或者对象在特定位置滚动。当进行第二方向的输入时，位于特定位置的物体被保存在保存位置，或者位于保存位置的物体位于特定位置。因此，允许用户容易地改变在屏幕上显示多个对象的显示顺序。

3. 发明申请

US20110274879A1 CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：导电GaAs的晶体和衬底及其形成方法
公开(公告)号：US20110274879A1
公开(公告)日：2011-11-10
申请号：US13145145
申请日：2010-01-20
申请人： Takashi Sakurada , Tomohiro Kawase
发明人： Takashi Sakurada , Tomohiro Kawase
IPC分类号： B32B3/00 , C30B11/00 , H01B1/02
CPC分类号： H01B1/02 , C22F1/16 , C30B29/42 , C30B33/02 , Y10T428/24355
摘要： An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.
摘要翻译：导电GaAs晶体的Si原子浓度大于1×1017cm-3，其中包含在晶体中的尺寸至少为30nm的析出物的密度为至多400cm-2。在这种情况下，优选导电性GaAs晶体的位错密度为2×10 -2 cm 2以下或至少1×10 -3 cm 2。

4. 发明授权

US07988842B2 Continuous copper electroplating method 有权
标题翻译：连续铜电镀方法
公开(公告)号：US07988842B2
公开(公告)日：2011-08-02
申请号：US12179352
申请日：2008-07-24
申请人： Shinji Tachibana , Koji Shimizu , Tomohiro Kawase , Naoyuki Omura , Toshihisa Isono , Kazuyoshi Nishimoto
发明人： Shinji Tachibana , Koji Shimizu , Tomohiro Kawase , Naoyuki Omura , Toshihisa Isono , Kazuyoshi Nishimoto
IPC分类号： C25D21/18 , C25B9/00
CPC分类号： C25D21/18
摘要： A continuous copper electroplating method wherein copper is continuously plated on a workpiece to be placed in a plating vessel accommodating a copper sulfate plating bath containing organic additives by use of a soluble or insoluble anode and a workpiece as a cathode, the method including overflowing the plating bath from the plating vessel in an overflow vessel under which the plating bath in the overflow vessel is returned to the plating vessel, providing an oxidative decomposition vessel, and returning a plating bath from the oxidative decomposition vessel through the overflow vessel to the plating vessel to circulate the plating bath between the plating vessel and oxidative decomposition vessel, and metallic copper is immersed in the plating bath in the oxidative decomposition vessel and exposed to air bubbling, so that decomposed/degenerated organic products formed by decomposition or degeneration produced during the copper electroplating can be oxidatively decomposed.
摘要翻译：一种连续铜电镀方法，其中铜连续地镀在工件上，以通过使用可溶性或不溶性阳极和工件作为阴极而放置在容纳含有有机添加剂的硫酸铜电镀液的电镀槽中，该方法包括使镀层溢出在溢流容器中从电镀槽中洗涤，在溢流容器中将溢流容器中的电镀液返回到电镀槽中，提供氧化分解容器，并将来自氧化分解容器的电镀槽通过溢流容器返回到电镀槽在电镀槽和氧化分解容器之间循环电镀槽，将金属铜浸入氧化分解容器中的电镀槽中，暴露于鼓泡状态，从而在铜电镀期间产生的分解/退化的有机产物可以氧化分解。

5. 发明申请

US20100219081A1 COPPER ELECTROPLATING BATH 有权
标题翻译：铜电镀浴
公开(公告)号：US20100219081A1
公开(公告)日：2010-09-02
申请号：US12599436
申请日：2007-05-21
申请人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
发明人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D3/00 , C25D3/02 , H01L21/02 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H05K3/423 , H05K3/424
摘要： A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.
摘要翻译：一种铜电镀槽，其可用于填充形成在包含水溶性铜盐，硫酸和氯离子的基底上的非通孔，并且还包含作为添加剂的增白剂，载体和矫味剂，其中所述矫平剂含有含有在溶液中可阳离子化的季氮，叔氮或二者的至少一种水溶性聚合物。在铜电镀槽中，通过将水溶性聚合物的季氮与叔氮比例变更为容易控制，可以容易地控制在基板上形成的非贯通孔的填充力，以适应孔的尺寸用作平整机，其使得能够对各种尺寸的非通孔的铜电镀具有很好的尺寸。

6. 发明申请

US20100017732A1 COMPUTER-READABLE STORAGE MEDIUM HAVING OBJECT DISPLAY ORDER CHANGING PROGRAM STORED THEREIN AND APPARATUS 有权
标题翻译：具有对象显示顺序的计算机可读存储介质更改其存储的程序和设备
公开(公告)号：US20100017732A1
公开(公告)日：2010-01-21
申请号：US12544557
申请日：2009-08-20
申请人： Yoshihiro Matsushima , Tomohiro Kawase
发明人： Yoshihiro Matsushima , Tomohiro Kawase
IPC分类号： G06F3/048
CPC分类号： G06F3/0482 , G06F9/451
摘要： An icon line is displayed on a screen. A display order for the icon line can be changed by using switch input means enabling a direction input. When an input in a first direction is made, objects are scrolled so as to sequentially display each object at a specific position or the objects are scrolled across the specific position. When an input in the second direction is made, an object positioned at the specific position is saved at a saving position or an object positioned at the saving position is positioned at the specific position. Thus, a user is allowed to easily change the display order in which a plurality of objects are displayed on a screen.
摘要翻译：屏幕上显示图标线。可以通过使用能够进行方向输入的开关输入装置来改变图标线的显示顺序。当进行第一方向的输入时，滚动对象以便在特定位置顺序地显示每个对象，或者对象在特定位置滚动。当进行第二方向的输入时，位于特定位置的物体被保存在保存位置，或者位于保存位置的物体位于特定位置。因此，允许用户容易地改变在屏幕上显示多个对象的显示顺序。

7. 发明申请

US20090280354A1 Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal 审中-公开
标题翻译：制备AlN晶体基板的方法，生长AlN晶体的方法和AlN晶体的基板
公开(公告)号：US20090280354A1
公开(公告)日：2009-11-12
申请号：US12306695
申请日：2007-06-15
申请人： Naho Mizuhara , Tomohiro Kawase , Michimasa Miyanaga
发明人： Naho Mizuhara , Tomohiro Kawase , Michimasa Miyanaga
IPC分类号： B05D5/12 , B32B9/00
CPC分类号： C30B29/403 , C30B23/02 , H01L21/02378 , H01L21/0254 , H01L21/02631
摘要： Affords AlN crystal substrate manufacturing methods whereby large-scale, high-quality AlN crystal substrates can be manufactured; AlN crystal growth methods whereby bulk AlN of superior crystallinity can be grown; and AlN crystal substrates composed of the AlN crystal grown by the growth methods. AlN crystal substrate manufacturing method including: a step of growing an AlN crystal by sublimation onto a heterogeneous substrate to a thickness of, with respect to the heterogeneous-substrate diameter r, 0.4r or more; and a step of forming an AlN crystal substrate from a region of the AlN crystal not less than 200 μm away from the heterogeneous substrate. Also, AlN crystal growth technique of growing an AlN crystal by sublimation onto an AlN crystal substrate manufactured by the manufacturing method, and AlN crystal substrates composed of the AlN crystal grown by the growth technique.
摘要翻译：提供可以制造大规模，高质量的AlN晶体基板的AlN晶体基板制造方法; AlN晶体生长方法可以生长具有优异结晶度的块状AlN; 和由通过生长方法生长的AlN晶体组成的AlN晶体衬底。 AlN晶体基板的制造方法，其特征在于，包括以下步骤：将AlN晶体通过升华成非均相基板直径r的厚度为0.4r以上，以及从不均匀衬底的不小于200μm的AlN晶体的区域形成AlN晶体衬底的步骤。此外，通过升华将AlN晶体生长到通过制造方法制造的AlN晶体衬底上的AlN晶体生长技术和由通过生长技术生长的AlN晶体组成的AlN晶体衬底。

8. 发明申请

US20090229986A1 CONTINUOUS COPPER ELECTROPLATING METHOD 有权
标题翻译：连续电镀方法
公开(公告)号：US20090229986A1
公开(公告)日：2009-09-17
申请号：US12401113
申请日：2009-03-10
申请人： Naoyuki OMURA , Toshihisa ISONO , Koji SHIMIZU , Shinji TACHIBANA , Tomohiro KAWASE , Shunsaku HOSHI
发明人： Naoyuki OMURA , Toshihisa ISONO , Koji SHIMIZU , Shinji TACHIBANA , Tomohiro KAWASE , Shunsaku HOSHI
IPC分类号： C25D21/18
CPC分类号： C25D17/00 , C25D3/38 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/18 , H05K3/241
摘要： Disclosed is a method for a repeated electroplating of a workpiece to be plated as a cathode by using an insoluble anode in a plating vessel accommodating a copper sulfate plating bath, wherein a copper dissolution vessel different from the plating vessel is provided, the plating bath is transferred to the copper dissolution vessel and is returned from the copper dissolution vessel to the plating vessel for circulating the plating bath between the plating vessel and the copper dissolution vessel, copper ion supplying salt is charged into the copper dissolution vessel and dissolved in the plating bath so that copper ions consumed by the plating can be replenished, and the workpiece to be plated is continuously electroplated, characterized in that the plating bath is permitted to transfer between the anode side and the cathode side, and the plating bath is returned to vicinity of the anode in the return of the plating bath from the copper dissolution vessel to the plating vessel. Plating performance impairing components, which are produced when the copper ion supplying salt is dissolved in the plating bath for replenishing the copper ions, are oxidized and decomposed, whereby defective plating due to the presence of the plating performance impairing components can be prevented.
摘要翻译：公开了一种通过在容纳硫酸铜电镀浴的电镀槽中使用不溶性阳极来重复电镀作为阴极的工件的方法，其中提供了不同于电镀槽的铜溶解容器，电镀浴是转移到铜溶解容器中，并从铜溶解容器返回到电镀槽，用于使电镀槽和铜溶解容器之间的电镀槽循环，将铜离子供应盐装入铜溶解容器中并溶解在镀浴中使得可以补充由电镀消耗的铜离子，并且将被镀工件连续电镀，其特征在于允许电镀液在阳极侧和阴极侧之间转移，电镀浴返回到阳极将电镀液从铜溶解容器返回到电镀槽中。当铜离子供应盐溶解在用于补充铜离子的镀浴中时产生的电镀性能损害部件被氧化分解，从而可以防止由于存在电镀性能损害部件而导致的不良电镀。

9. 发明授权

US07220347B2 Electrolytic copper plating bath and plating process therewith 有权
标题翻译：电解镀铜浴和电镀工艺
公开(公告)号：US07220347B2
公开(公告)日：2007-05-22
申请号：US11181856
申请日：2005-07-15
申请人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
发明人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
IPC分类号： C25D5/02 , C25D3/38 , C23C16/00
CPC分类号： C25D3/38 , H05K3/423
摘要： An electrolytic copper plating bath used for via-filling plating of blind via-holes formed on a substrate, containing a water-soluble copper salt, sulfuric acid, chloride ions, and a leveler as an additive, wherein the leveler is either one or both of a quaternary polyvinylimidazolium compound represented by the following formula (1) and a copolymer, represented by the following formula (2), of vinylpyrrolidone and a quaternary vinylimidazolium compound: where R1 and R2 are each an alkyl group, m is an integer of not less than 2, and p and q are each an integer of not less than 1, and a copper electroplating method for via-filling plating of blind via-holes formed on a substrate by use of the electrolytic copper plating bath.
摘要翻译：一种用于通孔填充电镀铜的电解镀铜浴，其形成在基底上，含有水溶性铜盐，硫酸，氯离子和矫味剂作为添加剂，其中矫直机是一个或两个由下式（1）表示的季铵聚乙烯基咪唑化合物和由下式（2）表示的共聚物，乙烯基吡咯烷酮和季乙烯基咪唑鎓化合物：其中R 1和R 2 各自为烷基，m为不小于2的整数，p和q各自为1以上的整数，形成盲孔的通孔充电电镀铜电镀法通过使用电解镀铜浴在基板上。

10. 发明申请

US20060207886A1 Electrolytic copper plating bath and plating process therewith 有权
标题翻译：电解镀铜浴和电镀工艺
公开(公告)号：US20060207886A1
公开(公告)日：2006-09-21
申请号：US11181856
申请日：2005-07-15
申请人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
发明人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , H05K3/423
摘要： An electrolytic copper plating bath used for via-filling plating of blind via-holes formed on a substrate, containing a water-soluble copper salt, sulfuric acid, chloride ions, and a leveler as an additive, wherein the leveler is either one or both of a quaternary polyvinylimidazolium compound represented by the following formula (1) and a copolymer, represented by the following formula (2), of vinylpyrrolidone and a quaternary vinylimidazolium compound: where R1 and R2 are each an alkyl group, m is an integer of not less than 2, and p and q are each an integer of not less than 1, and a copper electroplating method for via-filling plating of blind via-holes formed on a substrate by use of the electrolytic copper plating bath.
摘要翻译：一种用于通孔填充电镀铜的电解镀铜浴，其形成在基底上，含有水溶性铜盐，硫酸，氯离子和矫味剂作为添加剂，其中矫直机是一个或两个由下式（1）表示的季铵聚乙烯基咪唑化合物和由下式（2）表示的共聚物，乙烯基吡咯烷酮和季乙烯基咪唑鎓化合物：其中R 1和R 2 各自为烷基，m为不小于2的整数，p和q各自为1以上的整数，形成盲孔的通孔充电电镀铜电镀法通过使用电解镀铜浴在基板上。

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