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2. 发明授权

US5942931A Circuit for protecting an IC from noise 失效
标题翻译：用于保护IC免受噪音的电路
公开(公告)号：US5942931A
公开(公告)日：1999-08-24
申请号：US837360
申请日：1997-04-17
申请人： Tetsuro Yanai
发明人： Tetsuro Yanai
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H02H7/20 , H03K19/003 , H05F3/02 , H03K5/08
CPC分类号： H01L27/0266
摘要： A first MOS transistor (5) is provided between a power source terminal and an input terminal (3). A second MOS transistor (6) is provided between a ground terminal (2) and the input terminal (3). The gate of the first MOS transistor (5) is electrically connected to a node (8) and a resistor (9) is electrically connected between the node (8) and another ground terminal (2). The gate of the second transistor (6) is electrically connected to the ground terminal (2). When negative pulse-shaped static electricity is applied to a circuit constructed as described above, the potential applied to the gate of the first MOS transistor (5) is limited low by a voltage drop developed across the resistor (9). Therefore, the current flowing between the source and drain of the first MOS transistor (5) can be controlled low and a substrate current produced due to impact ionization can be prevented from flowing. It is thus possible to obtain a stabler operation of a semiconductor integrated circuit device.
摘要翻译：第一MOS晶体管（5）设置在电源端子和输入端子（3）之间。第二MOS晶体管（6）设置在接地端子（2）和输入端子（3）之间。第一MOS晶体管（5）的栅极电连接到节点（8），并且电阻器（9）电连接在节点（8）和另一接地端子（2）之间。第二晶体管（6）的栅极电连接到接地端子（2）。当对如上所述构成的电路施加负的脉冲状静电时，施加到第一MOS晶体管（5）的栅极的电位被跨越电阻器（9）的电压降限制为低。因此，可以将第一MOS晶体管（5）的源极和漏极之间流动的电流控制得较低，并且可以防止由于冲击电离而产生的衬底电流流动。因此，可以获得半导体集成电路器件的稳定操作。

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