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1. 发明授权

US5451549A Semiconductor dicing method which uses variable sawing speeds 失效
标题翻译：采用可变锯切速度的半导体切割方法
公开(公告)号：US5451549A
公开(公告)日：1995-09-19
申请号：US199746
申请日：1994-02-22
申请人： Tetsuro Oki , Yoshio Murakami
发明人： Tetsuro Oki , Yoshio Murakami
IPC分类号： B23D47/08 , B23D59/02 , B28D5/02 , H01L21/301 , H01L21/302 , H01L21/78 , H01L21/304
CPC分类号： H01L21/302 , B23D47/08 , B23D59/02 , B28D5/022 , H01L21/78 , Y10S148/028 , Y10S83/929 , Y10T83/04
摘要： A semiconductor dicing method capable of preventing the silver plating from refusing by heat generated during cutting at thick portions without reducing a large production amount. One end of a semiconductor wafer starts to be cut at a blade feeding speed of 16 mm/sec and the speed is gradually increased. The wafer is cut from a predetermined position to another predetermined position at the constant feeding speed of 40 mm/sec. The speed is then gradually decreased and another end of the semiconductor wafer finishes being cut at the feeding speed of 16 mm/sec. That is, at the cutting start, SPEED UP and at the cutting end, SLOW DOWN. Hence, the thick silver plating are slowly cut and the cutting part is cooled with cooling water. Thus, the heat generated by cutting friction can completely be controlled to prevent the silver plating from refusing.
摘要翻译：一种半导体切割方法，其能够防止镀银在厚部切割期间产生的热量而不会降低生产量。半导体晶片的一端开始以16mm / sec的叶片进给速度切割，速度逐渐增加。以40mm / sec的恒定进给速度将晶片从预定位置切割到另一个预定位置。然后逐渐降低速度，并以16mm / sec的进给速度切割半导体晶片的另一端。也就是说，在切割开始时，SPEED UP和切割端，SLOW DOWN。因此，将厚银镀层缓慢地切割，切割部分用冷却水冷却。因此，可以完全控制由切割摩擦产生的热量，以防止镀银被拒绝。

2. 发明授权

US5494549A Dicing method 失效
标题翻译：切片方法
公开(公告)号：US5494549A
公开(公告)日：1996-02-27
申请号：US131960
申请日：1993-10-08
申请人： Tetsuro Oki , Yoshio Murakami , Tsuyoshi Miyata
发明人： Tetsuro Oki , Yoshio Murakami , Tsuyoshi Miyata
IPC分类号： B28D5/00 , B32B31/18
CPC分类号： B28D5/0082 , Y10T156/1082
摘要： In a dicing method, a resin adhesive tape is stuck to one surface of a wafer mount frame, then a rubber plate is stuck to the tape from the open side of the frame. With the rubber plate stretched, an adhesive is sprayed over the rubber plate, whereupon a wafer is stuck to the rubber plate. A weight is placed on the rubber plate to extend it further, thus fixing the wafer to the frame. The thus mounted wafer is diced. Alternatively, a resin adhesive tape is stuck to one surface of the frame, then a thick adhesive rubber plate is stuck to the tape from the open side of the frame, whereupon a wafer with hard wax printed using a screen mask is stuck to the rubber plate. The thus mounted wafer is diced by cutting into it deeply. The cut wafer is soaked in a solvent for separation from the rubber plate. As a further alternative, screen mask printing is carried out on a wafer, and wax is coated over the wafer. A resin adhesive tape is stuck to one surface of a wafer mount frame, and then a thick adhesive rubber plate is stuck to the tape from the open side of the wafer mount frame, whereupon the wax-side surface of the wafer is stuck to the rubber plate. The mounted wafer is diced. The wafer is soaked in a solvent for separation of chips from the rubber plate.
摘要翻译：在切割方法中，将树脂粘合带粘贴在晶片安装框架的一个表面上，然后橡胶板从框架的开放侧粘附到带子上。在橡胶板拉伸的同时，将粘合剂喷在橡胶板上，然后将晶片粘在橡胶板上。将重物放置在橡胶板上以进一步延伸，从而将晶片固定到框架上。将如此安装的晶片切割。或者，将树脂粘合带粘贴在框架的一个表面上，然后将厚的粘合橡胶板从框架的开口侧粘附到带上，由此将使用筛网掩模印刷的具有硬蜡的晶片粘附到橡胶盘子。将这样安装的晶片深入切入。将切割的晶片浸入溶剂中以从橡胶板分离。作为另一替代方案，在晶片上进行屏幕掩模印刷，并且将蜡涂覆在晶片上。将树脂粘合带粘贴在晶片安装框架的一个表面上，然后将厚的粘合橡胶板从晶片安装框架的开放侧粘附到带上，由此将晶片的蜡侧表面粘附到橡胶板。安装的晶片被切割。将晶片浸泡在溶剂中以从橡胶板分离碎片。

3. 发明授权

US5462900A Method of manufacturing semiconductor elements without burrs 失效
标题翻译：制造半导体元件的方法
公开(公告)号：US5462900A
公开(公告)日：1995-10-31
申请号：US125547
申请日：1993-09-23
申请人： Tetsuro Oki , Koichiro Harada , Ryuichi Neki , Kazuo Kawakami , Tsuyoshi Miyata , Kozo Matsuo
发明人： Tetsuro Oki , Koichiro Harada , Ryuichi Neki , Kazuo Kawakami , Tsuyoshi Miyata , Kozo Matsuo
IPC分类号： H01L21/28 , H01L21/301 , H01L21/304 , H01L21/78 , H01L21/463
CPC分类号： H01L21/78 , Y10S148/028 , Y10T29/47
摘要： A method of manufacturing semiconductor elements with metal electrode films formed thereon in which the elements are spread on a metal screen having a mesh size small enough to prohibit the semiconductor elements from passing through it. The metal screen with the semiconductor elements on it is moved cyclically with a periodic motion substantially in a horizontal plane. As a result, burrs extending from the metal electrodes of the semiconductor elements are cut away or bent against the electrode surfaces of the semiconductor elements. The cyclic motion of the screen may be performed by tracing a figure-8 path.
摘要翻译：制造其上形成有金属电极膜的半导体元件的方法，其中元件铺展在具有足够小的网格尺寸的金属屏幕上，以防止半导体元件通过它。其上具有半导体元件的金属屏幕周期性地基本上在水平面上移动。结果，从半导体元件的金属电极延伸的毛刺被切掉或者相对于半导体元件的电极表面弯曲。可以通过跟踪图8路径来执行屏幕的循环运动。

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