专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06762476B2 Dielectric element including oxide dielectric film and method of manufacturing the same 有权
标题翻译：包含氧化物介电膜的电介质元件及其制造方法
公开(公告)号：US06762476B2
公开(公告)日：2004-07-13
申请号：US10060260
申请日：2002-02-01
申请人： Shigeharu Matsushita , Tatsurou Gueshi
发明人： Shigeharu Matsushita , Tatsurou Gueshi
IPC分类号： H01L2900
CPC分类号： H01L28/60 , H01L28/55
摘要： A dielectric element capable of attaining excellent element characteristics by suppressing an oxide dielectric film from deterioration of characteristics caused by hydrogen is obtained. This dielectric element comprises a lower electrode including a first conductor film containing a metal, silicon and nitrogen, a first insulator film including the oxide dielectric film and an upper electrode including a second conductor film containing the metal, silicon and nitrogen, while the metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. According to this structure, the first conductor film and the second conductor film function as barrier films preventing diffusion of hydrogen. Consequently, the first conductor film and the second conductor film suppress hydrogen from diffusing into the oxide dielectric film. Thus, the oxide dielectric film is prevented from deterioration of characteristics.
摘要翻译：获得能够通过抑制氧化物电介质膜由氢引起的特性劣化而获得优异元素特性的电介质元件。该电介质元件包括下电极，其包括含有金属，硅和氮的第一导体膜，包括氧化物电介质膜的第一绝缘膜和包括含有金属，硅和氮的第二导体膜的上电极，而金属包括选自由Ir，Pt，Ru，Re，Ni，Co和Mo组成的组中的至少一种金属。根据该结构，第一导体膜和第二导体膜用作阻止氢扩散的阻挡膜。因此，第一导体膜和第二导体膜抑制氢扩散到氧化物介电膜中。因此，防止了氧化物介电膜的特性劣化。

IPRDB

热门服务

关于我们

友情链接

联系方式