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    • 1. 发明申请
    • QUANTUM CASCADE LASER
    • 量子CASCADE激光
    • US20120134380A1
    • 2012-05-31
    • US13297588
    • 2011-11-16
    • Tadataka EDAMURAKazuue FUJITATatsuo DOUGAKIUCHIMasamichi YAMANISHI
    • Tadataka EDAMURAKazuue FUJITATatsuo DOUGAKIUCHIMasamichi YAMANISHI
    • H01S5/34
    • H01S5/3402B82Y20/00H01S5/0014H01S5/0287H01S5/1039
    • A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.
    • 量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层,并且具有通过多级层压单元层叠结构交替层叠发射层和注入层而形成的级联结构,每个层叠结构由量子阱发射 层和注入层,并通过量子阱结构中的子带间跃迁产生光。 在用于有源层中产生的具有预定波长的光的激光腔结构中,在作为激光振荡光的前端面上形成具有不小于40%且不大于99%的反射率的前反射膜, 激光束输出面以及反射率比用于激光振荡光的前反射膜的反射率高的背反射膜形成在后端面上。
    • 2. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US08514903B2
    • 2013-08-20
    • US13110687
    • 2011-05-18
    • Kazuue FujitaTadataka EdamuraTatsuo Dougakiuchi
    • Kazuue FujitaTadataka EdamuraTatsuo Dougakiuchi
    • H01S5/00
    • H01S5/3402B82Y20/00H01S5/22
    • A quantum cascade laser includes a semiconductor substrate, and an active layer having a cascade structure formed by multistage-laminating unit laminate structures each including an emission layer and an injection layer. Further, the unit laminate structure 16 includes a first emission upper level, a second emission upper level, and a plurality of emission lower levels, one of the first and second upper levels is a level arising from a ground level in the first well layer, and the other is a level arising from an excitation level in the well layer except for the first well layer. Further, the energy interval between the first upper level and the second upper level is set smaller than the energy of an LO phonon, and the energy interval between the second upper level and a higher energy level is set larger than the energy of an LO phonon.
    • 量子级联激光器包括半导体衬底和具有通过多级层叠单元层压结构形成的级联结构的有源层,每个层叠结构各自包括发射层和注入层。 此外,单元层叠结构16包括第一发光上电平,第二发光上电平和多个发光下电平,第一和第二上电平之一是从第一阱层中的地电平产生的电平, 另一个是除了第一阱层之外的阱层中的激发水平产生的水平。 此外,将第一上限电平和第二上限电平之间的能量间隔设置为小于LO声子的能量,并且将第二上限电平与较高能量电平之间的能量间隔设置为大于LO声子的能量 。
    • 5. 发明申请
    • QUANTUM CASCADE LASER
    • 量子CASCADE激光
    • US20110286486A1
    • 2011-11-24
    • US13110687
    • 2011-05-18
    • Kazuue FUJITATadataka EdamuraTatsuo Dougakiuchi
    • Kazuue FUJITATadataka EdamuraTatsuo Dougakiuchi
    • H01S5/34
    • H01S5/3402B82Y20/00H01S5/22
    • A quantum cascade laser is configured to include a semiconductor substrate, and an active layer provided on the substrate and having a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18. Further, the unit laminate structure 16 includes, in its subband level structure, a first emission upper level Lup1, a second emission upper level Lup2, and a plurality of emission lower levels Llow, one of the first and second upper levels is a level arising from a ground level in the first well layer, and the other is a level arising from an excitation level in the well layer except for the first well layer. Further, the energy interval between the first upper level and the second upper level is set to be smaller than the energy of an LO phonon, and the energy interval between the second upper level and a higher energy level Lh is set to be larger than the energy of an LO phonon. Accordingly, a quantum cascade laser capable of preferably obtaining emission in a broad wavelength range is realized.
    • 量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层,并且具有由包括发射层17和注入层18的多层叠层单元层压结构16形成的级联结构。此外,单元 层叠结构16在其子带层结构中包括第一发射上限电平Lup1,第二发射上电平Lup2和多个发射较低电平Llow,第一和第二上电平之一是从地电平产生的电平 在第一阱层中,另一个是由除了第一阱层之外的阱层中的激发电平产生的电平。 此外,将第一上限电平和第二上限电平之间的能量间隔设置为小于LO声子的能量,并且将第二上限电平和较高能量电平Lh之间的能量间隔设置为大于 LO声子的能量。 因此,可以实现能够优选在宽波长范围内获得发射的量子级联激光器。
    • 7. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US08699538B2
    • 2014-04-15
    • US13297588
    • 2011-11-16
    • Tadataka EdamuraKazuue FujitaTatsuo DougakiuchiMasamichi Yamanishi
    • Tadataka EdamuraKazuue FujitaTatsuo DougakiuchiMasamichi Yamanishi
    • H01S5/00
    • H01S5/3402B82Y20/00H01S5/0014H01S5/0287H01S5/1039
    • A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.
    • 量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层,并且具有通过多级层压单元层叠结构交替层叠发射层和注入层而形成的级联结构,每个层叠结构由量子阱发射 层和注入层,并通过量子阱结构中的子带间跃迁产生光。 在用于有源层中产生的具有预定波长的光的激光腔结构中,在作为激光振荡光的前端面上形成具有不小于40%且不大于99%的反射率的前反射膜, 激光束输出面以及反射率比用于激光振荡光的前反射膜的反射率高的背反射膜形成在后端面上。