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1. 发明申请

US20110221077A1 WATER REPELLANT COMPOSITION FOR SUBSTRATE TO BE EXPOSED, METHOD FOR FORMING RESIST PATTERN, ELECTRONIC DEVICE PRODUCED BY THE FORMATION METHOD, TREATMENT METHOD FOR IMPARTING WATER REPELLENCY TO SUBSTRATE TO BE EXPOSED, WATER REPELLANT SET FOR SUBSTRATE TO BE EXPOSED, AND TREATMENT METHOD FOR IMPARTING WATER REPELLENCY TO SUBSTRATE TO BE EXPOSED USING THE SAME 失效
标题翻译：用于形成耐蚀图案的水性组合物，形成方法生产的电子装置，用于将水再循环到底层以进行喷涂的处理方法，待被暴露的基材的水刷组合物，以及用于改变水的处理方法使用相同方式进行基材曝光
公开(公告)号：US20110221077A1
公开(公告)日：2011-09-15
申请号：US12867670
申请日：2009-02-20
申请人： Takeo Ishibashi , Miwako Ishibashi , Mamoru Terai , Takuya Hagiwara , Osamu Yokokoji , Yoko Takebe
发明人： Takeo Ishibashi , Miwako Ishibashi , Mamoru Terai , Takuya Hagiwara , Osamu Yokokoji , Yoko Takebe
IPC分类号： H01L23/00 , C09D5/00 , G03F7/20
CPC分类号： G03F7/16 , G03F7/11 , G03F7/2041
摘要： It is an object of the present invention to provide a water repellant composition for a substrate to be exposed which inhibits the back side of a substrate to be exposed from being contaminated by an immersion liquid, can improve adhesion between a film to be processed and an organic film directly overlying that film to inhibit film peeling, and has excellent workability, a method for forming a resist pattern, an electronic device produced by the formation method, a treatment method for imparting water repellency to a substrate to be exposed, a water repellent set for a substrate to be exposed, and a treatment method for imparting water repellency to a substrate to be exposed using the same. A water repellent composition for a substrate to be exposed including at least an organosilicon compound represented by the following general formula (1) and a solvent is used. In the formula, R1 is a monovalent organic group having 14 to 30 carbon atoms, each R2, R3, and R4 is independently a monovalent organic group or a hydrolyzable group having 1 to 10 carbon atoms, and at least one of R2, R3, and R4 is a hydrolyzable group.
摘要翻译：本发明的目的是提供一种抑制待暴露基板的背面被浸没液体污染的待曝光基材的防水组合物，可提高被处理膜与有机膜直接覆盖该膜以抑制膜剥离，并且具有优异的可加工性，形成抗蚀剂图案的方法，通过形成方法制造的电子器件，对待暴露的基底赋予拒水性的处理方法，防水剂设置为要暴露的基底，以及用于使用其进行曝光的基底赋予拒水性的处理方法。使用至少包含由以下通式（1）表示的有机硅化合物和溶剂的待曝光底物用防水组合物。式中，R1为碳原子数为14〜30的一价有机基团，R2，R3，R4分别独立为1价有机基团或碳原子数1〜10的可水解基团，R2，R3， R4是可水解基团。

2. 发明授权

US07883834B2 Method for forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US07883834B2
公开(公告)日：2011-02-08
申请号：US12652760
申请日：2010-01-06
申请人： Takuya Hagiwara
发明人： Takuya Hagiwara
IPC分类号： G03F7/26 , G03F1/00 , H01L21/027
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/70433 , G03F7/70458 , H01L21/31144 , H01L21/76816
摘要： In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.
摘要翻译：在曝光步骤中，使用第一光掩模和第二掩模的组合。第一掩模具有对应于实际形成在待处理的膜上的图案的实际图案，以及添加用于将第一光掩模中的图案间距控制在规定范围内的虚拟图案; 并且第二光掩模具有将实图案形成区域与伪图案形成区域隔离的图案。在形成图案时，在基板上形成待处理的膜之后，通过光刻法，使用第一光掩模，在待加工的膜上形成第一掩模，并且在被处理膜上形成第二掩模，通过光刻，使用第二光掩模。此后，使用第一和第二掩模作为掩模蚀刻并除去待处理的膜以形成图案。

3. 发明申请

US20080241489A1 Method of forming resist pattern and semiconductor device manufactured with the same 审中-公开
标题翻译：形成抗蚀剂图案的方法和用其制造的半导体器件
公开(公告)号：US20080241489A1
公开(公告)日：2008-10-02
申请号：US12078098
申请日：2008-03-27
申请人： Takeo Ishibashi , Mamoru Terai , Takuya Hagiwara , Atsumi Yamaguchi
发明人： Takeo Ishibashi , Mamoru Terai , Takuya Hagiwara , Atsumi Yamaguchi
IPC分类号： H01L23/00 , B32B3/00 , G03F7/207
CPC分类号： G03F7/2041 , G03F7/11 , Y10T428/24835
摘要： A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.
摘要翻译：提供了一种通过液浸曝光形成抗蚀剂图案的方法，其中进行曝光，使得在其上形成有处理膜的半导体器件的基板和布置在基板上方的物镜之间形成液膜，并且用至少由拒水剂和溶剂组成的拒水剂溶液处理的基材曝光。

4. 发明授权

US06787459B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06787459B2
公开(公告)日：2004-09-07
申请号：US10294700
申请日：2002-11-15
申请人： Akemi Moniwa , Takuya Hagiwara , Keitaro Katabuchi , Hiroshi Fukuda , Mineko Adachi
发明人： Akemi Moniwa , Takuya Hagiwara , Keitaro Katabuchi , Hiroshi Fukuda , Mineko Adachi
IPC分类号： H01C2144
CPC分类号： G03F1/70 , G03F1/26 , Y10S438/942
摘要： There is provided a method of fabricating a semiconductor device whereby fine patterns are formed with high dimensional accuracy by means of multiple exposures, using a phase shift mask and a trim mask. Phases are periodically assigned to shifter patterns within a given range from patterns generated with the phase shift mask, respectively.
摘要翻译：提供一种制造半导体器件的方法，由此通过使用相移掩模和修剪掩模，通过多次曝光以高尺寸精度形成精细图案。相位分别定期地分配给给定范围内的移相器图案，从用相移掩模生成的图案。

5. 发明授权

US08530145B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08530145B2
公开(公告)日：2013-09-10
申请号：US12979405
申请日：2010-12-28
申请人： Takuya Hagiwara
发明人： Takuya Hagiwara
IPC分类号： G03F7/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/70433 , G03F7/70458 , H01L21/31144 , H01L21/76816
摘要： In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed,by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.
摘要翻译：在曝光步骤中，使用第一光掩模和第二掩模的组合。第一掩模具有对应于实际形成在待处理的膜上的图案的实际图案，以及添加用于将第一光掩模中的图案间距控制在规定范围内的虚拟图案; 并且第二光掩模具有将实图案形成区域与伪图案形成区域隔离的图案。在形成图案时，在基板上形成待处理的膜之后，通过光刻法，使用第一光掩模，在待加工的膜上形成第一掩模，并且在被处理膜上形成第二掩模，通过光刻，使用第二光掩模。此后，使用第一和第二掩模作为掩模蚀刻并除去待处理的膜以形成图案。

6. 发明授权

US08323879B2 Method of forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US08323879B2
公开(公告)日：2012-12-04
申请号：US12720924
申请日：2010-03-10
申请人： Mamoru Terai , Takuya Hagiwara
发明人： Mamoru Terai , Takuya Hagiwara
IPC分类号： G03F7/26
CPC分类号： G03F7/38 , G03F7/2041 , G03F7/70341 , Y10T428/24802
摘要： The present invention relates to a method of forming a resist pattern for obtaining an electronic device in which a development defect is eliminated, and aims at providing a process that is simple and low-cost, and can impart a high hydrophobicity capable of high-speed scan. It relates to a method of forming a resist pattern including the steps of: providing immersion exposure to a resist film; solubilizing the resist film subjected to the immersion exposure in an alkaline developer; developing the resist film solubilized in the alkaline developer by alkali immersion; and performing a deionized water rinse treatment on the developed resist film in this order, wherein the step of solubilization in the alkaline developer is performed by exposing the resist film subjected to the immersion exposure to ozone gas without irradiating ultraviolet rays (hereinafter, sometimes referred to as ozone treatment).
摘要翻译：本发明涉及一种形成抗蚀剂图形的方法，其用于获得其中消除显影缺陷的电子器件，并且旨在提供简单且低成本的工艺，并且可以赋予高速度的高疏水性扫描涉及一种形成抗蚀剂图案的方法，包括以下步骤：向抗蚀剂膜提供浸渍曝光; 将浸渍曝光的抗蚀剂膜溶解在碱性显影剂中; 通过碱浸渍显影溶解在碱性显影剂中的抗蚀剂膜; 并对所形成的抗蚀剂膜进行去离子水冲洗处理，其中在碱性显影剂中溶解的步骤是通过将经浸渍曝光的抗蚀剂膜暴露于臭氧气体而不照射紫外线（以下有时称为作为臭氧处理）。

7. 发明申请

US20050100799A1 Photomask, and method for forming pattern 有权
标题翻译：光掩模和形成图案的方法
公开(公告)号：US20050100799A1
公开(公告)日：2005-05-12
申请号：US10974813
申请日：2004-10-28
申请人： Takuya Hagiwara
发明人： Takuya Hagiwara
IPC分类号： G03C5/00 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/00 , G03F7/20 , G03F7/26 , G03F7/40 , G03F9/00 , H01L21/027
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/70433 , G03F7/70458 , H01L21/31144 , H01L21/76816
摘要： In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.
摘要翻译：在曝光步骤中，使用第一光掩模和第二掩模的组合。第一掩模具有对应于实际形成在待处理的膜上的图案的实际图案，以及添加用于将第一光掩模中的图案间距控制在规定范围内的虚拟图案; 并且第二光掩模具有将实图案形成区域与伪图案形成区域隔离的图案。在形成图案时，在基板上形成待处理的膜之后，通过光刻法，使用第一光掩模，在待加工的膜上形成第一掩模，并且在被处理膜上形成第二掩模，通过光刻，使用第二光掩模。此后，使用第一和第二掩模作为掩模蚀刻并除去待处理的膜以形成图案。

8. 发明授权

US08808970B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08808970B2
公开(公告)日：2014-08-19
申请号：US13591214
申请日：2012-08-21
申请人： Takuya Hagiwara
发明人： Takuya Hagiwara
IPC分类号： G03F7/26
CPC分类号： H01L21/0274 , G03F7/0046 , G03F7/0392 , G03F7/0752 , G03F7/091 , G03F7/11 , G03F7/16 , G03F7/2041 , G03F7/40 , H01L21/0271 , H01L21/0276 , H01L21/3081 , H01L21/3083 , H01L21/31058 , H01L21/31144 , H01L21/76232 , H01L21/76802
摘要： To improve the manufacturing yield of semiconductor devices. Over a semiconductor wafer, a film to be processed is formed; over that film, an antireflection film is formed; and, over the antireflection film, a resist layer is formed. Then, the resist layer is subjected to liquid immersion exposure, and a development and rinsing process to form a resist pattern. After that, the antireflection film and the film to be processed are etched sequentially using the resist pattern as an etching mask. In the development process of the resist layer, the antireflection film is exposed from parts from which the resist layer has been removed by the development process. When performing a rinsing process after the development, the water repellent property of the surface of the antireflection film exposed from the resist layer is not lower than the water repellent property of the surface of the resist layer.
摘要翻译：提高半导体器件的制造成品率。在半导体晶片上形成被处理膜，在该膜上形成抗反射膜; 并且在抗反射膜上方形成抗蚀剂层。然后，对抗蚀剂层进行液浸曝光，并进行显影和漂洗处理以形成抗蚀剂图案。之后，使用抗蚀剂图案作为蚀刻掩模，顺序地蚀刻防反射膜和待处理的膜。在抗蚀剂层的显影过程中，抗反射膜通过显影处理从已经除去了抗蚀剂层的部分露出。在显影后进行漂洗处理时，从抗蚀剂层露出的防反射膜的表面的防水性不低于抗蚀剂层的表面的防水性。

9. 发明申请

US20130052824A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20130052824A1
公开(公告)日：2013-02-28
申请号：US13591214
申请日：2012-08-21
申请人： Takuya HAGIWARA
发明人： Takuya HAGIWARA
IPC分类号： H01L21/302
CPC分类号： H01L21/0274 , G03F7/0046 , G03F7/0392 , G03F7/0752 , G03F7/091 , G03F7/11 , G03F7/16 , G03F7/2041 , G03F7/40 , H01L21/0271 , H01L21/0276 , H01L21/3081 , H01L21/3083 , H01L21/31058 , H01L21/31144 , H01L21/76232 , H01L21/76802
摘要： To improve the manufacturing yield of semiconductor devices. Over a semiconductor wafer, a film to be processed is formed; over that film, an antireflection film is formed; and, over the antireflection film, a resist layer is formed. Then, the resist layer is subjected to liquid immersion exposure, and a development and rinsing process to form a resist pattern. After that, the antireflection film and the film to be processed are etched sequentially using the resist pattern as an etching mask. In the development process of the resist layer, the antireflection film is exposed from parts from which the resist layer has been removed by the development process. When performing a rinsing process after the development, the water repellent property of the surface of the antireflection film exposed from the resist layer is not lower than the water repellent property of the surface of the resist layer.
摘要翻译：提高半导体器件的制造成品率。在半导体晶片上形成被处理膜，在该膜上形成抗反射膜; 并且在抗反射膜上方形成抗蚀剂层。然后，对抗蚀剂层进行液浸曝光，并进行显影和漂洗处理以形成抗蚀剂图案。之后，使用抗蚀剂图案作为蚀刻掩模，顺序地蚀刻防反射膜和待处理的膜。在抗蚀剂层的显影过程中，抗反射膜通过显影处理从已经除去了抗蚀剂层的部分露出。在显影后进行漂洗处理时，从抗蚀剂层露出的防反射膜的表面的防水性不低于抗蚀剂层的表面的防水性。

10. 发明授权

US08178983B2 Water repellant composition for substrate to be exposed, method for forming resist pattern, electronic device produced by the formation method, treatment method for imparting water repellency to substrate to be exposed, water repellant set for substrate to be exposed, and treatment method for imparting water repellency to substrate to be exposed using the same 失效
标题翻译：用于曝光的基材的防水组合物，抗蚀剂图案的形成方法，通过形成方法制造的电子装置，用于赋予待暴露的基板的拒水性的处理方法，待曝光的基板的防水组和用于赋予水的处理方法对使用其曝光的基板的排斥性
公开(公告)号：US08178983B2
公开(公告)日：2012-05-15
申请号：US12867670
申请日：2009-02-20
申请人： Takeo Ishibashi , Miwako Ishibashi, legal representative , Mamoru Terai , Takuya Hagiwara , Osamu Yokokoji , Yoko Takebe
发明人： Takeo Ishibashi , Mamoru Terai , Takuya Hagiwara , Osamu Yokokoji , Yoko Takebe
IPC分类号： H01L23/29 , B05D3/02
CPC分类号： G03F7/16 , G03F7/11 , G03F7/2041
摘要： It is an object of the present invention to provide a water repellant composition for a substrate to be exposed which inhibits the back side of a substrate to be exposed from being contaminated by an immersion liquid, can improve adhesion between a film to be processed and an organic film directly overlying that film to inhibit film peeling, and has excellent workability, a method for forming a resist pattern, an electronic device produced by the formation method, a treatment method for imparting water repellency to a substrate to be exposed, a water repellent set for a substrate to be exposed, and a treatment method for imparting water repellency to a substrate to be exposed using the same. A water repellent composition for a substrate to be exposed including at least an organosilicon compound represented by the following general formula (1) and a solvent is used. In the formula, R1 is a monovalent organic group having 14 to 30 carbon atoms, each R2, R3, and R4 is independently a monovalent organic group or a hydrolyzable group having 1 to 10 carbon atoms, and at least one of R2, R3, and R4 is a hydrolyzable group.
摘要翻译：本发明的目的是提供一种抑制待暴露基板的背面被浸没液体污染的待曝光基材的防水组合物，可提高被处理膜与有机膜直接覆盖该膜以抑制膜剥离，并且具有优异的可加工性，形成抗蚀剂图案的方法，通过形成方法制造的电子器件，对待暴露的基底赋予拒水性的处理方法，防水剂设置为要暴露的基底，以及用于使用其进行曝光的基底赋予拒水性的处理方法。使用至少包含由以下通式（1）表示的有机硅化合物和溶剂的待曝光底物用防水组合物。式中，R1为碳原子数为14〜30的一价有机基团，R2，R3，R4分别独立为1价有机基团或碳原子数1〜10的可水解基团，R2，R3， R4是可水解基团。

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