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1. 发明授权

US5559962A Data transmission system selecting both source and destination using addressing mechanism 失效
标题翻译：数据传输系统使用寻址机制选择源和目的地
公开(公告)号：US5559962A
公开(公告)日：1996-09-24
申请号：US487660
申请日：1995-06-07
申请人： Yashikoi Okamura , Yasuo Kageyama , Takashi Suzuki , Junichi Fujimori , Takeshi Funada
发明人： Yashikoi Okamura , Yasuo Kageyama , Takashi Suzuki , Junichi Fujimori , Takeshi Funada
IPC分类号： G06F13/42 , G06F13/00
CPC分类号： G06F13/423
摘要： A data transmission system includes a main controlling unit for producing pieces of address information, each piece of address information being indicative of a first address for a data source and a second address for a destination. The data transmission system further includes a plurality of component units assigned individual addresses, respectively, and a timing controlling unit sequentially supplying the pieces of address information to the component units at predetermined timings. In operation, one of the component units with the individual address matched with the first address serves as the data source and another component unit with the individual address matched with the second address serves as the destination communicating with the data source.
摘要翻译：数据传输系统包括用于产生地址信息的主控制单元，每一地址信息指示数据源的第一地址和目的地的第二地址。数据传输系统还包括分别分配了各个地址的多个分量单元，以及定时控制单元，以预定的定时顺序地将这些地址信息提供给分量单元。在操作中，具有与第一地址匹配的单独地址的组件单元之一用作数据源，并且具有与第二地址匹配的单独地址的另一组件单元用作与数据源通信的目的地。

2. 发明授权

US08736832B2 Method of detecting specific defect, and system and program for detecting specific defect 有权
标题翻译：检测特定缺陷的方法，以及用于检测特定缺陷的系统和程序
公开(公告)号：US08736832B2
公开(公告)日：2014-05-27
申请号：US13428064
申请日：2012-03-23
申请人： Takeshi Funada
发明人： Takeshi Funada
IPC分类号： G01N21/956
CPC分类号： G01N21/9501
摘要： The present invention provides a detection method which allows specific defects that would occur on a wafer surface to be detected more reliably. A method of detecting a specific defect of the present invention includes the steps of: acquiring a light point map which is in-plane position information of a light point detected in a position corresponding to a defect on a surface of a wafer by irradiating the surface of the wafer with light (S101); specifying a determination region where a specific defect is expected to be formed and a reference region which is a given region other than the determination region in the light point map, and calculating a ratio of a light point density of the determination region to a light point density of the reference region (S102); and determining whether or not the specific defect is formed based on the calculated ratio (S103).
摘要翻译：本发明提供一种能够更可靠地检测在晶片表面发生的特定缺陷的检测方法。检测本发明的特定缺陷的方法包括以下步骤：通过照射表面获取在与晶片表面上的缺陷相对应的位置中检测到的光点的平面内位置信息的光点图的光（S101）; 指定期望形成特定缺陷的确定区域和作为光点图中的确定区域以外的给定区域的参考区域，并且计算确定区域的光点密度与光点的比率参考区域的密度（S102）; 以及基于所计算的比率来确定是否形成所述特定缺陷（S103）。

3. 发明申请

US20120176612A1 METHOD OF DETECTING SPECIFIC DEFECT, AND SYSTEM AND PROGRAM FOR DETECTING SPECIFIC DEFECT 有权
标题翻译：检测特定缺陷的方法，以及用于检测特定缺陷的系统和程序
公开(公告)号：US20120176612A1
公开(公告)日：2012-07-12
申请号：US13428064
申请日：2012-03-23
申请人： Takeshi Funada
发明人： Takeshi Funada
IPC分类号： G01N21/956
CPC分类号： G01N21/9501
摘要： The present invention provides a detection method which allows specific defects that would occur on a wafer surface to be detected more reliably. A method of detecting a specific defect of the present invention includes the steps of: acquiring a light point map which is in-plane position information of a light point detected in a position corresponding to a defect on a surface of a wafer by irradiating the surface of the wafer with light (S101); specifying a determination region where a specific defect is expected to be formed and a reference region which is a given region other than the determination region in the light point map, and calculating a ratio of a light point density of the determination region to a light point density of the reference region (S102); and determining whether or not the specific defect is formed based on the calculated ratio (S103).
摘要翻译：本发明提供一种能够更可靠地检测在晶片表面发生的特定缺陷的检测方法。检测本发明的特定缺陷的方法包括以下步骤：通过照射表面获取在与晶片表面上的缺陷相对应的位置中检测到的光点的平面内位置信息的光点图的光（S101）; 指定期望形成特定缺陷的确定区域和作为光点图中的确定区域以外的给定区域的参考区域，并且计算确定区域的光点密度与光点的比率参考区域的密度（S102）; 以及基于所计算的比率来确定是否形成所述特定缺陷（S103）。

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