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1. 发明授权

US08507296B2 Substrate processing method and film forming method 有权
公开(公告)号：US08507296B2
公开(公告)日：2013-08-13
申请号：US12382343
申请日：2009-03-13
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/00 , B05C11/02 , G06F19/00
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.

2. 发明授权

US07795143B2 Substrate processing apparatus and manufacturing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US07795143B2
公开(公告)日：2010-09-14
申请号：US12226323
申请日：2007-08-09
申请人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
发明人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
IPC分类号： H01L21/44
CPC分类号： C23C16/455 , H01L21/67126 , H01L21/68792 , Y10S438/914
摘要： A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.
摘要翻译：一种基板处理装置，包括：处理基板的反应容器; 密封盖，经由第一密封构件和第二密封构件与反应容器的开口侧的一端接触，以便气密地密封反应容器的开口; 第一气体通道，在密封盖与反应容器接触的状态下，形成在第一密封构件和第二密封构件之间的区域中; 第二气体通道，设置在所述密封盖上，所述第一气体通道与所述反应容器的内部连通; 第一气体供给口，其设置在所述反应容器上，并向第一气体通道供给第一气体; 以及第二供气口，其设置在所述反应容器上并将第二气体供应到所述反应容器中，其中，朝向所述第一气体通道开口的所述第一气体供给口的前端开口和所述第二气体通道的基部开口在密封盖与反应容器接触的状态下，开口到第一气体通道彼此分离。

3. 发明申请

US20100190355A1 Substrate processing apparatus and manufacturing method of semiconductor device 有权
公开(公告)号：US20100190355A1
公开(公告)日：2010-07-29
申请号：US12659999
申请日：2010-03-26
申请人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
发明人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
IPC分类号： H01L21/318
CPC分类号： C23C16/455 , H01L21/67126 , H01L21/68792 , Y10S438/914
摘要： A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.

4. 发明申请

US20090197352A1 Substrate processing method and film forming method 有权
标题翻译：基板加工方法和成膜方法
公开(公告)号：US20090197352A1
公开(公告)日：2009-08-06
申请号：US12382343
申请日：2009-03-13
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/66
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.
摘要翻译：处理室中的基板处理方法具有：将基板容纳到处理室中; 基于加热装置的预设温度，由冷却装置供应的流体的流量与容纳在处理室中的基板的中心侧之间的温度偏差的相关性来处理处理室中的基板;以及通过加热装置，在校正的预设温度下从衬底的外周侧对容纳在处理室中的衬底进行光学加热的衬底的外周侧，并且流体以流动被供给到处理室的外部基于相关关系，通过冷却装置冷却基板的外周侧。

5. 发明授权

US08501599B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08501599B2
公开(公告)日：2013-08-06
申请号：US12087479
申请日：2007-02-21
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/20 , H01L21/36 , H05B1/02 , C23C16/00
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
摘要翻译：基板处理装置具有：处理基板的处理室; 加热装置，其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置，其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部，其检测处理室内的温度; 以及加热控制部，其以这样的方式控制加热装置和冷却装置，以在基板的中心部分和基板的端部之间提供温度差，同时将中心部分处的温度保持在预先根据由温度检测部分检测的温度确定温度。

6. 发明授权

US08367530B2 Substrate processing apparatus and manufacturing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US08367530B2
公开(公告)日：2013-02-05
申请号：US12659999
申请日：2010-03-26
申请人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
发明人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： C23C16/455 , H01L21/67126 , H01L21/68792 , Y10S438/914
摘要： A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.
摘要翻译：一种基板处理装置，包括：处理基板的反应容器; 密封盖，经由第一密封构件和第二密封构件与反应容器的开口侧的一端接触，以便气密地密封反应容器的开口; 第一气体通道，在密封盖与反应容器接触的状态下，形成在第一密封构件和第二密封构件之间的区域中; 第二气体通道，设置在所述密封盖上，所述第一气体通道与所述反应容器的内部连通; 第一气体供给口，其设置在所述反应容器上，并向第一气体通道供给第一气体; 以及第二供气口，其设置在所述反应容器上并将第二气体供应到所述反应容器中，其中，朝向所述第一气体通道开口的所述第一气体供给口的前端开口和所述第二气体通道的基部开口在密封盖与反应容器接触的状态下，开口到第一气体通道彼此分离。

7. 发明申请

US20090163040A1 Substrate Processing Apparatus and Manufacturing Method of Semiconductor Device 有权
标题翻译：半导体器件的基板加工装置及其制造方法
公开(公告)号：US20090163040A1
公开(公告)日：2009-06-25
申请号：US12226323
申请日：2007-08-09
申请人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
发明人： Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
IPC分类号： H01L21/30 , C23C16/458
CPC分类号： C23C16/455 , H01L21/67126 , H01L21/68792 , Y10S438/914
摘要： A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.
摘要翻译：一种基板处理装置，包括：处理基板的反应容器; 密封盖，经由第一密封构件和第二密封构件与反应容器的开口侧的一端接触，以便气密地密封反应容器的开口; 第一气体通道，在密封盖与反应容器接触的状态下，形成在第一密封构件和第二密封构件之间的区域中; 第二气体通道，设置在所述密封盖上，所述第一气体通道与所述反应容器的内部连通; 第一气体供给口，其设置在所述反应容器上，并向第一气体通道供给第一气体; 以及第二供气口，其设置在所述反应容器上并将第二气体供应到所述反应容器中，其中，朝向所述第一气体通道开口的所述第一气体供给口的前端开口和所述第二气体通道的基部开口在密封盖与反应容器接触的状态下，开口到第一气体通道彼此分离。

8. 发明申请

US20110104879A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20110104879A1
公开(公告)日：2011-05-05
申请号：US12897037
申请日：2010-10-04
申请人： Takeo HANASHIMA
发明人： Takeo HANASHIMA
IPC分类号： H01L21/20 , C23C16/30 , B05C11/10
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45557 , C23C16/52 , H01L21/02532 , H01L21/02592
摘要： Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus, which can improve the surface roughness of an amorphous silicon film. The method of manufacturing a semiconductor device comprises: in a process of forming an amorphous silicon film on a substrate, setting, in an initial stage of the process, an in-furnace pressure to a first pressure to supply SiH4; and setting, in a stage after the initial stage, the in-furnace pressure to a second pressure lower than the first pressure to supply SiH4.
摘要翻译：提供一种可以提高非晶硅膜的表面粗糙度的半导体装置和基板处理装置的制造方法。制造半导体器件的方法包括：在衬底上形成非晶硅膜的工艺中，在工艺的初始阶段将炉内压力设定为第一压力以供应SiH4; 并且在初始阶段之后的阶段将炉内压力设定为低于第一压力的第二压力以供应SiH4。

9. 发明申请

US20090029486A1 Substrate Processing Apparatus and Substrate Processing Method 有权
标题翻译：基板加工装置及基板加工方法
公开(公告)号：US20090029486A1
公开(公告)日：2009-01-29
申请号：US12087479
申请日：2007-02-21
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
摘要翻译：基板处理装置具有：处理基板的处理室; 加热装置，其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置，其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部，其检测处理室内的温度; 以及加热控制部，其以这样的方式控制加热装置和冷却装置，以在基板的中心部分和基板的端部之间提供温度差，同时将中心部分处的温度保持在预先根据由温度检测部分检测的温度确定温度。

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