会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Deep bass sound booster device
    • 深低音增音装置
    • US06920224B2
    • 2005-07-19
    • US09976025
    • 2001-10-15
    • Takashi Oki
    • Takashi Oki
    • H04R3/04H03G5/00H03G5/02H02B1/00H04R1/10H04R5/02
    • H03G5/00
    • A deep bass sound booster device comprises a high-pass filter to which an input sound signal is fed and which permits only a frequency component higher than a predetermined frequency to pass through so as to output a resulting signal, a bass booster to which the input sound signal is fed and which amplifies only a frequency component lower than the predetermined frequency and attenuates another frequency component so as to output a resulting signal, a switch to which the signal output from the bass booster is fed at one end and which, when turned on, outputs that signal at another end, and an adder to which the signal output from the high-pass filter is fed and to which the signal output from the switch is fed, the adder adding together those two signals and outputting a resulting signal.
    • 深低音增音装置包括高通滤波器,输入声音信号被馈送到该高通滤波器,并且仅允许高于预定频率的频率分量通过,以输出结果信号;低音增强器,输入 声音信号被馈送并且仅放大低于预定频率的频率分量,并且衰减另一频率分量以便输出结果信号,从一个端部输入从低音增强器输出的信号的开关,当转动时 在另一端输出信号,以及从高通滤波器输出的信号被馈送到加法器,加法器从该开关输出信号,加法器将这两个信号相加并输出结果信号。
    • 3. 发明授权
    • Current driving circuit
    • 电流驱动电路
    • US08653754B2
    • 2014-02-18
    • US13008125
    • 2011-01-18
    • Hiroki KikuchiMasao YonemaruTakashi Oki
    • Hiroki KikuchiMasao YonemaruTakashi Oki
    • H05B37/02H03K3/26G05F1/10
    • H03F3/347G05F3/262H03F3/087H03F2200/456H03F2200/91
    • A current driving circuit may include a reference voltage input terminal; a resistor connection terminal; an output terminal via which the light emitting element is connected; a reference voltage generating unit; a transistor arranged such that one terminal thereof is connected to the resistor connection terminal; and an operational amplifier including first and second non-inverting input terminals and a single inverting input terminal, and arranged such that the output terminal thereof is connected to a control terminal of the transistor, the internal reference voltage is input to the first non-inverting input terminal, the external reference voltage is input to the second non-inverting input terminal, and the inverting input terminal thereof is connected to the resistor connection terminal. When the external resistor is connected between the resistor connection terminal and a ground terminal, a driving current is output via the output terminal.
    • 电流驱动电路可以包括参考电压输入端; 电阻连接端子; 连接发光元件的输出端子; 参考电压产生单元; 晶体管,其一端连接到电阻器连接端子; 以及包括第一和第二非反相输入端子和单反相输入端子的运算放大器,并且被布置为使得其输出端子连接到晶体管的控制端子,内部参考电压被输入到第一非反相 输入端子,外部参考电压输入到第二同相输入端子,其反相输入端子连接到电阻器连接端子。 当外部电阻连接在电阻连接端子和接地端子之间时,通过输出端子输出驱动电流。
    • 4. 发明授权
    • Method of producing composite metal hydroxide, composite metal hydroxide
obtained thereby and a flame retardant composition obtained thereby and
therewith
    • 制备复合金属氢氧化物的方法,由此获得的复合金属氢氧化物和由此得到的阻燃组合物
    • US5766568A
    • 1998-06-16
    • US691310
    • 1996-08-02
    • Hirofumi KurisuToshikazu KodaniAtsuya KawaseTakashi Oki
    • Hirofumi KurisuToshikazu KodaniAtsuya KawaseTakashi Oki
    • C01F5/22C01F5/00C01G9/00C08K3/22C09K21/02C01B13/36C01F5/14
    • C01F5/00C01G9/00C09K21/02C01P2002/54
    • A composite metal hydroxide is produced by reacting magnesium-containing aqueous solution (X) including water soluble zinc compound wherein magnesium ion concentration is 0.01 to 1 mol/liter with alkaline material (Y) at a specific reaction equivalent ratio. Further, a composite metal hydroxide represented by the following general formula (1) is produced by hydrothermally treating thus obtained composite metal hydroxide within a temperature range of 100.degree. to 200.degree. C. for aging in chlorine-containing aqueous solution having a specific chlorine ion concentration: Mg.sub.1-x Zn.sub.x (OH).sub.2 (1) wherein x indicates a positive number within a range of 0.003.ltoreq.x.ltoreq.0.1. A uniform metallic solid solution can be obtained as a composite metal hydroxide by the above series of processes. Further, its crystal shape can be controlled thereby so as to restrain occurrence of secondary aggregation. Still further, a flame retardant high-molecular composition obtained by including thus obtained composite metal hydroxide into a high-molecular weight composition exerts high flame retardancy and shows superiority in mechanical strength.
    • 通过使镁离子浓度为0.01〜1摩尔/升的水溶性锌化合物的含镁水溶液(X)与碱性物质(Y)以特定的反应当量比进行反应来制造复合金属氢氧化物。 此外,通过在100℃〜200℃的温度范围内对这样得到的复合金属氢氧化物进行水热处理,制造由以下通式(1)表示的复合金属氢氧化物,以在具有特定氯离子的含氯水溶液中老化 浓度:Mg1-xZnx(OH)2(1)其中x表示在0.003≤x≤0.1的范围内的正数。 通过上述一系列方法可以得到均匀的金属固溶体作为复合金属氢氧化物。 此外,可以控制其晶体形状,从而抑制二次聚集的发生。 此外,通过将由此得到的复合金属氢氧化物包含在高分子量组合物中获得的阻燃性高分子组合物发挥高阻燃性并且显示机械强度的优异性。
    • 6. 发明申请
    • Abnormality detection circuit
    • 异常检测电路
    • US20080048732A1
    • 2008-02-28
    • US11880506
    • 2007-07-23
    • Takashi Oki
    • Takashi Oki
    • H02H1/00H03F1/00H03F3/217H03K5/19
    • G01R31/40G01R19/16547H03F1/52H03F3/217
    • An abnormality detection circuit monitors a power supply voltage and, when the power supply voltage drops, outputs an abnormality detection signal of a predetermined level. The source of a detection transistor as a P-channel MOSFET is connected to a power supply line to which a power supply voltage to be monitored is applied. A detection resistor as an impedance element is provided between the drain of the detection transistor and a ground terminal. A capacitor is provided between the gate of the detection transistor and the ground terminal. A charging path is provided between the gate of the detection transistor and the power supply line. The abnormality detection circuit outputs a drain voltage of the detection transistor as an abnormality detection signal.
    • 异常检测电路监视电源电压,当电源电压下降时,输出预定电平的异常检测信号。 作为P沟道MOSFET的检测晶体管的源极连接到施加要监视的电源电压的电源线。 作为阻抗元件的检测电阻器设置在检测晶体管的漏极和接地端子之间。 在检测晶体管的栅极和接地端子之间提供电容器。 在检测晶体管的栅极和电源线之间设置充电路径。 异常检测电路将检测晶体管的漏极电压作为异常检测信号输出。