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1. 发明授权

US07190010B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07190010B2
公开(公告)日：2007-03-13
申请号：US11011140
申请日：2004-12-15
申请人： Takachika Imato , Hiroshi Matsuoka
发明人： Takachika Imato , Hiroshi Matsuoka
IPC分类号： H01L31/113
CPC分类号： H01L21/28587 , H01L29/42316
摘要： A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and covers a side surface of the leg portion of the T-shaped gate electrode. The interlayer dielectric film is located between the overhanging head portion of the T-shaped gate electrode and the semiconductor substrate and has a dielectric constant that is lower than that of the moisture-proof insulating film.
摘要翻译：半导体器件包括半导体衬底，T形栅电极，防潮绝缘膜和层间绝缘膜。 T形栅极具有连接到半导体衬底的腿部和与半导体衬底间隔开的悬垂头部。 T形栅电极包括含有与水反应的材料的栅极金属。防潮绝缘膜仅位于腿部附近，并且覆盖T形栅电极的腿部的侧表面。层间电介质膜位于T形栅电极的伸出头部与半导体基板之间，其介电常数比防湿绝缘膜低。

2. 发明申请

US20050224846A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050224846A1
公开(公告)日：2005-10-13
申请号：US11011140
申请日：2004-12-15
申请人： Takachika Imato , Hiroshi Matsuoka
发明人： Takachika Imato , Hiroshi Matsuoka
IPC分类号： H01L29/41 , H01L21/285 , H01L21/338 , H01L29/423 , H01L29/812 , H01L31/113
CPC分类号： H01L21/28587 , H01L29/42316
摘要： A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and covers a side surface of the leg portion of the T-shaped gate electrode. The interlayer dielectric film is located between the overhanging head portion of the T-shaped gate electrode and the semiconductor substrate and has a dielectric constant that is lower than that of the moisture-proof insulating film.
摘要翻译：半导体器件包括半导体衬底，T形栅电极，防潮绝缘膜和层间绝缘膜。 T形栅极具有连接到半导体衬底的腿部和与半导体衬底间隔开的悬垂头部。 T形栅电极包括含有与水反应的材料的栅极金属。防潮绝缘膜仅位于腿部附近，并且覆盖T形栅电极的腿部的侧表面。层间电介质膜位于T形栅电极的伸出头部与半导体基板之间，其介电常数低于防湿绝缘膜的介电常数。

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