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1. 发明申请

US20120307406A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20120307406A1
公开(公告)日：2012-12-06
申请号：US13481361
申请日：2012-05-25
申请人： Takaaki Tatsumi
发明人： Takaaki Tatsumi
IPC分类号： H02H9/04
CPC分类号： H01L27/0285 , H01L27/092
摘要： Disclosed herein is a semiconductor integrated circuit including in a same semiconductor substrate: first and second power supply lines; a protected circuit being connected between the first and second power supply lines and provided with a supply voltage; a detecting circuit detecting a surge generated in the first power supply line; an inverter circuit having one or more inverters connected in series to each other; and a protection transistor being connected between the first and second power supply lines and controlled by output of the detecting circuit to discharge the surge to the second power supply line. In the inverter circuit, an inverter whose output is connected to a control node of the protection transistor is connected between the first power supply line and a third power supply line that is different from the first and second power supply lines.
摘要翻译：这里公开了一种半导体集成电路，其包括在同一半导体衬底中：第一和第二电源线; 被保护电路连接在第一和第二电源线之间并且具有电源电压; 检测电路，检测在第一电源线中产生的浪涌; 具有彼此串联连接的一个或多个逆变器的逆变器电路; 以及保护晶体管，连接在第一和第二电源线之间，并由检测电路的输出控制，以将浪涌放电到第二电源线。在逆变器电路中，输出连接到保护晶体管的控制节点的逆变器连接在第一电源线和与第一和第二电源线不同的第三电源线之间。

2. 发明授权

US08711533B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US08711533B2
公开(公告)日：2014-04-29
申请号：US13481361
申请日：2012-05-25
申请人： Takaaki Tatsumi
发明人： Takaaki Tatsumi
IPC分类号： H02H3/22
CPC分类号： H01L27/0285 , H01L27/092
摘要： Disclosed herein is a semiconductor integrated circuit including in a same semiconductor substrate: first and second power supply lines; a protected circuit being connected between the first and second power supply lines and provided with a supply voltage; a detecting circuit detecting a surge generated in the first power supply line; an inverter circuit having one or more inverters connected in series to each other; and a protection transistor being connected between the first and second power supply lines and controlled by output of the detecting circuit to discharge the surge to the second power supply line. In the inverter circuit, an inverter whose output is connected to a control node of the protection transistor is connected between the first power supply line and a third power supply line that is different from the first and second power supply lines.
摘要翻译：这里公开了一种半导体集成电路，其包括在同一半导体衬底中：第一和第二电源线; 被保护电路连接在第一和第二电源线之间并且具有电源电压; 检测电路，检测在第一电源线中产生的浪涌; 具有彼此串联连接的一个或多个逆变器的逆变器电路; 以及保护晶体管，连接在第一和第二电源线之间，并由检测电路的输出控制，以将浪涌放电到第二电源线。在逆变器电路中，输出连接到保护晶体管的控制节点的逆变器连接在第一电源线和与第一和第二电源线不同的第三电源线之间。

3. 发明授权

US06446033B1 Method for simulating electrical characteristics of electronic device 失效
标题翻译：模拟电子设备电气特性的方法
公开(公告)号：US06446033B1
公开(公告)日：2002-09-03
申请号：US08533939
申请日：1995-09-26
申请人： Takaaki Tatsumi
发明人： Takaaki Tatsumi
IPC分类号： G06F9455
CPC分类号： G06F17/5018
摘要： There is provided a method for simulating the electrical characteristics of an electronic device including a step of specifying the material, electrical characteristics, and shape of a part of interest of the electronic device, the specification of the shape being performed by selecting it from among several preselected simplified shape models to obtain required data easily. Further, it is possible to reuse such data as input data for various simulators. The data can be accurately created in a shorter period of time.
摘要翻译：提供了一种用于模拟电子设备的电气特性的方法，包括指定电子设备的感兴趣部分的材料，电特性和形状的步骤，通过从几个预选的简化形状模型可以轻松获取所需数据。此外，可以重用这些数据作为各种模拟器的输入数据。数据可以在更短的时间内精确地创建。

4. 发明授权

US08487381B2 Protection element and semiconductor device having the protection element 失效
标题翻译：具有保护元件的保护元件和半导体器件
公开(公告)号：US08487381B2
公开(公告)日：2013-07-16
申请号：US13332606
申请日：2011-12-21
申请人： Takaaki Tatsumi
发明人： Takaaki Tatsumi
IPC分类号： H01L23/62
CPC分类号： H01L27/0255 , H01L29/78
摘要： Disclosed herein is a protection element for protecting a circuit element. The protection element includes source and drain areas created in a semiconductor layer, a gate created on the semiconductor layer, sandwiching a gate insulation film between the gate and the semiconductor layer, a source electrode connected to the surface of the source area and electrically connected to the ground, a drain electrode connected to the surface of the drain area and used for receiving a surge input, and a diode connected between the source electrode and the gate.
摘要翻译：这里公开了一种用于保护电路元件的保护元件。保护元件包括在半导体层中产生的源极和漏极区域，在半导体层上形成的栅极，在栅极和半导体层之间夹着栅极绝缘膜，源极连接到源极区域的表面并电连接到接地，连接到漏极区域的表面并用于接收浪涌输入的漏电极，以及连接在源电极和栅极之间的二极管。

5. 发明申请

US20120168867A1 PROTECTION ELEMENT AND SEMICONDUCTOR DEVICE HAVING THE PROTECTION ELEMENT 失效
标题翻译：具有保护元件的保护元件和半导体器件
公开(公告)号：US20120168867A1
公开(公告)日：2012-07-05
申请号：US13332606
申请日：2011-12-21
申请人： Takaaki TATSUMI
发明人： Takaaki TATSUMI
IPC分类号： H01L27/06
CPC分类号： H01L27/0255 , H01L29/78
摘要： Disclosed herein is a protection element for protecting a circuit element. The protection element includes source and drain areas created in a semiconductor layer, a gate created on the semiconductor layer, sandwiching a gate insulation film between the gate and the semiconductor layer, a source electrode connected to the surface of the source area and electrically connected to the ground, a drain electrode connected to the surface of the drain area and used for receiving a surge input, and a diode connected between the source electrode and the gate.
摘要翻译：这里公开了一种用于保护电路元件的保护元件。保护元件包括在半导体层中产生的源极和漏极区域，在半导体层上形成的栅极，在栅极和半导体层之间夹着栅极绝缘膜，源极连接到源极区域的表面并电连接到接地，连接到漏极区域的表面并用于接收浪涌输入的漏电极，以及连接在源电极和栅极之间的二极管。

6. 发明授权

US06321183B1 Semiconductor device characteristic simulation apparatus and its method 失效
标题翻译：半导体器件特性仿真装置及其方法
公开(公告)号：US06321183B1
公开(公告)日：2001-11-20
申请号：US09103709
申请日：1998-06-24
申请人： Takaaki Tatsumi
发明人： Takaaki Tatsumi
IPC分类号： G06F1750
CPC分类号： H01L22/20
摘要： In a semiconductor device characteristic simulation apparatus and its method, performance characteristics of a semiconductor integrated circuit are image-displayed as a distribution on a semiconductor substrate without actually fabricating the semiconductor integrated circuit. To simulate the fluctuation in device characteristic values of a plurality of semiconductor integrated circuits formed on a semiconductor substrate by applying various types of processing to the semiconductor substrate, the present invention generates simulation data for executing simulations in accordance with measured data for a plurality of predetermined portions on the semiconductor substrate after processed, calculates device characteristic values of the semiconductor integrated circuits in accordance with the simulation data, and displays the fluctuation of device characteristic values as a distribution on the semiconductor substrate.
摘要翻译：在半导体器件特征模拟装置及其方法中，半导体集成电路的性能特性在半导体衬底上作为分布进行图像显示，而不实际制造半导体集成电路。为了通过对半导体衬底应用各种类型的处理来模拟在半导体衬底上形成的多个半导体集成电路的器件特性值的波动，本发明根据多个预定的测量数据产生用于执行模拟的仿真数据处理后的半导体衬底上的部分根据模拟数据计算半导体集成电路的器件特性值，并将器件特性值的波动作为分布显示在半导体衬底上。

7. 发明授权

US06214701B1 Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus 失效
标题翻译：半导体衬底和薄膜半导体器件，其制造方法和阳极氧化设备
公开(公告)号：US06214701B1
公开(公告)日：2001-04-10
申请号：US09215314
申请日：1998-12-18
申请人： Takeshi Matsushita , Misao Kusunoki , Takaaki Tatsumi
发明人： Takeshi Matsushita , Misao Kusunoki , Takaaki Tatsumi
IPC分类号： H01L2146
CPC分类号： H01L31/184 , H01L21/2007 , H01L21/7624 , H01L21/76259 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/96 , Y10S438/977
摘要： A semiconductor substrate, a thin film semiconductor device, a manufacturing method thereof and an anodizing apparatus which can reduce the manufacturing cost and save the resources are provided. According to this invention, a semiconductor thin film is formed through a separation layer of a porous semiconductor on a substrate body of sapphire; the semiconductor thin film is separated from the porosity layer and used for a thin film semiconductor device; and the substrate body from which the semiconductor thin film is separated is used again after the separation layer attached thereto is removed by etching. Since sapphire has high strength, high rigidity, high resistance to wearing, high heat resistance, high abrasion resistance and high chemicals resistance, no deterioration and no damage occur even when the substrate body is repetitively used. Thus, the recycle frequency can be increased, and the reduction of the manufacturing cost and the saving of the resources can be promoted.
摘要翻译：提供了可以降低制造成本并节省资源的半导体衬底，薄膜半导体器件，其制造方法和阳极氧化设备。根据本发明，通过蓝宝石衬底主体上的多孔半导体的分离层形成半导体薄膜; 半导体薄膜与孔隙层分离并用于薄膜半导体器件; 并且在通过蚀刻去除附着于其上的分离层之后，再次使用分离有半导体薄膜的基板体。由于蓝宝石具有高强度，高刚性，高耐磨性，高耐热性，高耐磨性和高耐化学性，因此即使重复使用基板体也不会发生劣化和不损坏。因此，可以提高再循环频率，可以促进制造成本的降低和资源的节省。

8. 发明授权

US5886906A Method and apparatus of simulating semiconductor circuit 失效
标题翻译：模拟半导体电路的方法和装置
公开(公告)号：US5886906A
公开(公告)日：1999-03-23
申请号：US768400
申请日：1996-12-18
申请人： Takaaki Tatsumi , Koichi Hayakawa
发明人： Takaaki Tatsumi , Koichi Hayakawa
IPC分类号： H01L21/66 , G06F17/50 , G06F19/00 , H01L21/00 , H01L29/00
CPC分类号： G06F17/5036
摘要： A simulation apparatus for simulating a characteristic of a semiconductor circuit, including; a distribution information input unit for receiving a distribution information, the distribution information including a range and/or profile of distribution of a variation of a device parameter and/or a process parameter of the semiconductor circuit and being adaptive to an actual distribution; a random number generating unit for generating a random number on the basis of a probability responsive to the received distribution information; a characteristic calculation unit for calculating a dominant formula by using the random number to obtain a characteristic of the semiconductor circuit; and an output unit for outputting the resultant characteristic of the semiconductor circuit.
摘要翻译：一种用于模拟半导体电路的特性的模拟装置，包括：分发信息输入单元，用于接收分发信息，所述分发信息包括半导体电路的设备参数和/或处理参数的变化的分布的范围和/或分布，并且适应于实际分布; 随机数生成单元，用于基于响应于所接收的分发信息的概率来生成随机数; 特征计算单元，用于通过使用所述随机数来计算所述主要公式以获得所述半导体电路的特性; 以及用于输出所得到的半导体电路的特性的输出单元。

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