专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08377829B2 Method of manufacturing a capacitor deep trench and of etching a deep trench opening 有权
标题翻译：制造电容器深沟槽并蚀刻深沟槽开口的方法
公开(公告)号：US08377829B2
公开(公告)日：2013-02-19
申请号：US11871166
申请日：2007-10-12
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

2. 发明授权

US10325066B2 System for mental health clinical application 有权
公开(公告)号：US10325066B2
公开(公告)日：2019-06-18
申请号：US15626609
申请日：2017-06-19
申请人： Ta-Chuan Yeh
发明人： Ta-Chuan Yeh
IPC分类号： G06F19/00 , G16H50/30 , A63B71/06 , A61M21/00 , A63B24/00
摘要： A system for mental health clinical application includes a virtual reality (VR) headset, a physiological sensor device and a computer device. The computer device is used to perform an illness test on a user by establishing a virtual 3D environment via the VR headset according to test data provided by the computer device. The computer device receives, from the physiological sensor device, a physiological signal of the user in response to the illness test to analyze an illness condition of the user.

3. 发明授权

US07344954B2 Method of manufacturing a capacitor deep trench and of etching a deep trench opening 有权
标题翻译：制造电容器深沟槽并蚀刻深沟槽开口的方法
公开(公告)号：US07344954B2
公开(公告)日：2008-03-18
申请号：US11306560
申请日：2006-01-03
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/20
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

4. 发明申请

US20080038931A1 METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING 有权
标题翻译：制造电容式深层电镀和蚀刻深层开关的方法
公开(公告)号：US20080038931A1
公开(公告)日：2008-02-14
申请号：US11871166
申请日：2007-10-12
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/306
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

5. 发明申请

US20070155089A1 METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING 有权
标题翻译：制造电容式深层电镀和蚀刻深层开关的方法
公开(公告)号：US20070155089A1
公开(公告)日：2007-07-05
申请号：US11306560
申请日：2006-01-03
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

6. 发明申请

US20180011971A1 SYSTEM FOR MENTAL HEALTH CLINICAL APPLICATION 审中-公开
公开(公告)号：US20180011971A1
公开(公告)日：2018-01-11
申请号：US15626609
申请日：2017-06-19
申请人： Ta-Chuan YEH
发明人： Ta-Chuan YEH
IPC分类号： G06F19/00 , A63B71/06 , A61M21/00 , A63B24/00
CPC分类号： G06F19/30 , A61M21/00 , A61M2021/0027 , A61M2021/005 , A61M2230/005 , A61M2230/04 , A61M2230/06 , A61M2230/10 , A61M2230/42 , A61M2230/50 , A61M2230/60 , A63B71/0622 , A63B2024/0012 , G06F19/00 , G16H50/30
摘要： A system for mental health clinical application includes a virtual reality (VR) headset, a physiological sensor device and a computer device. The computer device is used to perform an illness test on a user by establishing a virtual 3D environment via the VR headset according to test data provided by the computer device. The computer device receives, from the physiological sensor device, a physiological signal of the user in response to the illness test to analyze an illness condition of the user.

7. 发明申请

US20080213967A1 TRENCH CAPACITOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： TRENCH电容器及其制造方法
公开(公告)号：US20080213967A1
公开(公告)日：2008-09-04
申请号：US12030883
申请日：2008-02-14
申请人： Yi-Nan Su , Ta-Chuan Yeh
发明人： Yi-Nan Su , Ta-Chuan Yeh
IPC分类号： H01L21/20 , H01L29/92
CPC分类号： H01L29/66181 , H01L27/1087 , H01L27/10894 , H01L28/91 , H01L29/945
摘要： Method of manufacturing a trench capacitor includes providing a substrate having a memory array region and a logic region, performing a shallow trench isolation (STI) process for forming at least a STI in the substrate within each of the memory array regions and the logic regions, forming a patterned hard mask and the hard mask exposing a portion of the STI and a portion of the substrate surrounding the STI on the substrate, performing a first etching process to form first deep trenches through the patterned hard mask, performing a second etching process to form second deep trenches extending downwardly from the first deep trenches respectively, and forming a capacitor structure in each of the first deep trenches and the second deep trenches.
摘要翻译：制造沟槽电容器的方法包括提供具有存储器阵列区域和逻辑区域的衬底，执行用于在每个存储器阵列区域和逻辑区域内的衬底中至少形成STI的浅沟槽隔离（STI）工艺，形成图案化的硬掩模，并且所述硬掩模暴露所述STI的一部分和围绕所述衬底上的所述STI的所述衬底的一部分，执行第一蚀刻工艺以形成穿过所述图案化硬掩模的第一深沟槽，执行第二蚀刻工艺形成从第一深沟槽向下延伸的第二深沟槽，并且在第一深沟槽和第二深沟槽中的每一个中形成电容器结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式