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1. 发明公开

US20240387768A1 SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, PHOTOVOLTAIC MODULE, AND PHOTOVOLTAIC SYSTEM 审中-公开
公开(公告)号：US20240387768A1
公开(公告)日：2024-11-21
申请号：US18654091
申请日：2024-05-03
申请人： TRINA SOLAR CO., LTD.
发明人： Chengfa LIU , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/1868 , H01L31/022425 , H01L31/02363 , H01L31/1804 , H01L31/186 , H01L31/02167
摘要： The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

2. 发明公开

US20240379882A1 SOLAR CELLS 审中-公开
公开(公告)号：US20240379882A1
公开(公告)日：2024-11-14
申请号：US18501236
申请日：2023-11-03
申请人： Trina Solar Co., Ltd
发明人： Guangtao Yang , Daming Chen , Yifeng Chen
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022466 , H01L31/0682
摘要： A solar cell comprises a substrate having an opposite first surface and a second surface, and the second surface has a first regions and a second regions adjacent in the first direction; a first passivation layer located on the first surface; a first doped layer and a tunnel oxide layer sequentially stacked in the first region; a first insulating layer located on a surface of the first doped layer away from the substrate; a second passivation layer located in the second region and extending to a surface of the first insulating layer away from the substrate; a second doped layer located on a surface of the second passivation layer away from the substrate, and a second insulating layer located between the second passivation layer and the first doped layer, the tunnel oxide layer in the first direction, a surface of the second insulating layer away from the substrate contacting with the first insulating layer.

3. 发明公开

US20240363776A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF, PHOTOVOLTAIC MODULE, AND PHOTOVOLTAIC SYSTEM 审中-公开
公开(公告)号：US20240363776A1
公开(公告)日：2024-10-31
申请号：US18768660
申请日：2024-07-10
申请人： TRINA SOLAR CO., LTD.
发明人： Binglun Han , Daming Chen , Guangtao Yang
IPC分类号： H01L31/0352 , H01L31/0216 , H01L31/20
CPC分类号： H01L31/035245 , H01L31/02168 , H01L31/202 , H01L31/208
摘要： A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The manufacturing method includes: providing a substrate; and dividing a second surface of the substrate into a first region, a second region, and an isolation region; sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate; removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region; doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.

4. 发明公开

US20240363771A1 SOLAR CELL, PHOTOVOLTAIC MODULE, AND PHOTOVOLTAIC SYSTEM 审中-公开
公开(公告)号：US20240363771A1
公开(公告)日：2024-10-31
申请号：US18767403
申请日：2024-07-09
申请人： TRINA SOLAR CO., LTD.
发明人： Daming Chen , Wei Liu , Yifeng Chen , Dongyun Lv
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/0352
CPC分类号： H01L31/022458 , H01L31/02366 , H01L31/035209
摘要： A solar cell includes a semiconducting substrate, a first emitter, and a second emitter. The semiconducting substrate includes first and second surfaces. The semiconducting substrate includes first and second regions. The first direction is perpendicular to the thickness direction of the semiconducting substrate. The first emitter is in a first conductivity type. The first emitter is disposed on the first surface and including a groove. The groove divides the first emitter into a first sub-emitter and a second sub-emitter. The first sub-emitter is located on the first region. The second sub-emitter is located on the second region. The second emitter is in a second conductivity type, and the second emitter is disposed on the first surface and located on the second region. The minimum distance between the second emitter and the second surface is less than the minimum distance between the first emitter and the second surface.

5. 发明公开

US20240347667A1 FILM PREPARATION METHOD, SOLAR CELL, PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC SYSTEM 审中-公开
公开(公告)号：US20240347667A1
公开(公告)日：2024-10-17
申请号：US18369946
申请日：2023-09-19
申请人： TRINA SOLAR CO., LTD.
发明人： Chengfa LIU , Shuai ZHANG , Hong CHEN , Yugang LU , Wanli LI , Yang ZOU
IPC分类号： H01L31/18 , H01L31/0216
CPC分类号： H01L31/18 , H01L31/02167
摘要： The present application provides a film preparation method, a solar cell, a photovoltaic device, and a photovoltaic system. The film preparation method includes forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer is the same as that of the first passivation layer; wherein a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is better than that of the second passivation layer.

6. 发明公开

US20240234597A9 GRID LINE STRUCTURE WITH ANTI-BREAKAGE GLUING INTERCONNECTION, A SOLAR BATTERY AND A GLUING METHOD 审中-公开
公开(公告)号：US20240234597A9
公开(公告)日：2024-07-11
申请号：US18492245
申请日：2023-10-23
申请人： Trina Solar Co., Ltd
发明人： Junpan Guo , Shu Zhang , Haiyuan Chu , Le Wang
IPC分类号： H01L31/0224
CPC分类号： H01L31/022433
摘要： The present disclosure provides a grid line structure with anti-breakage gluing interconnection, a solar battery and a gluing method. The grid line structure comprises: a plurality of fingers, the plurality of fingers extending along a first direction and arranged at intervals along a second direction; a plurality of gluing points, an adhesive applied on at least part of the plurality of gluing points is an insulating glue to form a plurality of insulating gluing points, each insulating gluing point is located between two adjacent fingers, and at least part of the plurality of insulating gluing points are located on the same straight line in the second direction to form a plurality of insulating gluing lines; the plurality of insulating gluing lines include a first insulating gluing line and a second insulating gluing line; wherein, the grid line structure has a busbar and/or the second insulating gluing line at a position adjacent to the first insulating gluing line in the first direction, and the plurality of insulating gluing points in the second insulating gluing line and the plurality of insulating gluing points in the first insulating gluing line are staggered from each other in the first direction. The grid line structure can solve the problem of transmission interruption caused by overflow of insulating glue in batteries without busbar or with busbar, which improves the stability and reliability of solar batteries.

7. 发明公开

US20240136458A1 SOLAR CELL, SOLAR CELL MODULE AND SOLAR CELL MANUFACTURING EQUIPMENT 审中-公开
公开(公告)号：US20240136458A1
公开(公告)日：2024-04-25
申请号：US18476106
申请日：2023-09-26
申请人： TRINA SOLAR CO., LTD , TRINA SOLAR (CHANGZHOU) SCIENCE & TECHNOLOGY CO., LTD
发明人： Yang ZOU
IPC分类号： H01L31/052 , H01L31/0216 , H01L31/0224 , H01L31/048
CPC分类号： H01L31/052 , H01L31/02168 , H01L31/022433 , H01L31/0488
摘要： A solar cell includes a semiconductor substrate, both a front surface and a back surface of the semiconductor substrate are provided with a preset structure; the preset structure comprises a fine grid layer including a plurality of fine grids; a dielectric protection layer formed on the fine grid layer; and a busbar layer including a plurality of busbars that penetrate through the dielectric protection layer and are connected with the fine grids.

8. 发明公开

US20240063324A1 METHOD FOR MANUFACTURING SOLAR CELL 审中-公开
公开(公告)号：US20240063324A1
公开(公告)日：2024-02-22
申请号：US18386544
申请日：2023-11-02
申请人： TRINA SOLAR CO., LTD.
发明人： Chengfa LIU , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/1868 , H01L31/1804 , H01L31/02363 , H01L31/02167
摘要： The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting material layer is provided. A first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting material layer covers the textured structure. A passivating contact material layer is formed on each surface of the wafer. The wafer formed with the passivating contact material layer is cut along the thickness direction of the substrate to form a sub-wafer, so as to form a doped conducting layer. The passivating contact material layer is etched to form a passivating contact layer. A first passivation layer is formed on the doped conducting layer, and further covers at least a portion of a cut edge side surface which is a side surface of the sub-wafer formed by cutting the wafer.

9. 发明申请

US20230136715A1 LAMINATED PASSIVATION STRUCTURE OF SOLAR CELL AND PREPARATION METHOD THEREOF 有权
公开(公告)号：US20230136715A1
公开(公告)日：2023-05-04
申请号：US17434085
申请日：2021-05-21
申请人： Trina Solar Co., Ltd.
发明人： Xueling Zhang , Wei Liu , Hong Chen , Lei Jian , Yifeng Chen
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/068
摘要： A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer sequentially arranged on the back side of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer and a third dielectric layer on the first dielectric layer.

10. 发明公开

US20240355941A1 SOLAR CELL, PREPARATION METHOD THEREOF AND PHOTOVOLTAIC MODULE 审中-公开
公开(公告)号：US20240355941A1
公开(公告)日：2024-10-24
申请号：US18757722
申请日：2024-06-28
申请人： TRINA SOLAR CO., LTD.
发明人： Yunyun Hu , Wei Liu , Daming Chen
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0368 , H01L31/0376
CPC分类号： H01L31/02168 , H01L31/022433 , H01L31/022441 , H01L31/02366 , H01L31/03685 , H01L31/03762
摘要： A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a semiconductor substrate, a first substrate doped layer, a second substrate doped layer, a first passivation layer, and a first doped semiconductor layer. The semiconductor substrate includes a first surface, and the first surface includes a first region and a second region adjacent to the first region along a first direction. The first substrate doped layer is located in the first region. The second substrate doped layer is located in the second region, and the first substrate doped layer is connected to the second substrate doped layer. The first passivation layer is located on a side of the second substrate doped layer away from the semiconductor substrate. The first doped semiconductor layer is located on a side of the first passivation layer away from the semiconductor substrate.

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