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1. 发明申请

US20150232988A1 VAPOR PHASE GROWTH APPARATUS 审中-公开
标题翻译：蒸气相生长装置
公开(公告)号：US20150232988A1
公开(公告)日：2015-08-20
申请号：US14427237
申请日：2013-09-26
申请人： TAIYO NIPPONSANSO CORPORATION , TN EMC LTD.
发明人： Akira Yamaguchi , Akinori Ubukata , Yuya Yamaoka , Kosuke Uchiyama
IPC分类号： C23C16/458 , C23C16/52
CPC分类号： C23C16/4583 , C23C16/44 , C23C16/4584 , C23C16/4585 , C23C16/52 , H01L21/6719 , H01L21/67754 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： Provided is a high-productivity, compact vapor phase growth apparatus 1. This vapor phase growth apparatus 1 is configured to supply a raw material gas onto a substrate 5 placed in a chamber 2 that can be vertically divided into a chamber main body 3 and a chamber cover 4 to cause a thin film to grow on the substrate 5. This vapor phase growth apparatus 1 includes a susceptor 7 formed from a circular plate that is detachably arranged on the chamber main body 3 side and is configured to hold the substrate 5, a susceptor cover 9 to be placed on the susceptor 7 so as to cover a region other than a substrate holding portion of the susceptor 7, a ceiling plate 11 that is provided separated from the susceptor 7 by a predetermined interval and faces the susceptor 7 to form a flow path of the raw material gas, and a temporary placement apparatus 21 configured to temporarily place at least one of the susceptor 7, the susceptor cover 9, and the ceiling plate 11 in a space above the chamber main body 3 formed when the chamber 2 has been divided.
摘要翻译：提供了一种高生产率，小型气相生长装置1.该气相生长装置1构成为将原料气体供给到放置在室2中的基板5上，该室2可以纵向分割成室主体3和室盖4使薄膜在基板5上生长。该气相生长装置1包括由圆板形成的基座7，其可拆卸地布置在室主体3侧并且构造成保持基板5，将基座7放置在基座7上，以覆盖基座7的基板保持部以外的区域;顶板11，其从基座7隔开预定间隔设置，并与基座7相对; 形成原料气体的流路，临时配置装置21将基座7，基座罩9和顶板11中的至少一个临时放置在室主体上方的空间当室2被分割时形成的主体3。

2. 发明授权

US09109303B2 Susceptor and vapor-phase growth apparatus 有权
标题翻译：受体和气相生长装置
公开(公告)号：US09109303B2
公开(公告)日：2015-08-18
申请号：US13932346
申请日：2013-07-01
申请人： TAIYO NIPPON SANSO CORPORATION , TN EMC LTD.
发明人： Akira Yamaguchi , Kosuke Uchiyama
IPC分类号： C30B25/12 , C23C14/50 , C23C16/458
CPC分类号： C30B25/12 , C23C14/50 , C23C14/505 , C23C16/458 , C23C16/4583 , C23C16/4584
摘要： The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and the susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.
摘要翻译：本发明提供了一种基座，其可转动地设置在腔室中并且具有多个基板安装部分，并且其上沉积薄膜的基板可旋转地安装在基板安装部分上，并且基座具有盘形，其中在基座的内周面设置有开口部，插入有用于使基座转动的旋转轴的基座，并且基座具有在所述开口的外周和/或周边沿径向延伸的多个切口。

3. 发明申请

US20140007815A1 SUSCEPTOR AND VAPOR-PHASE GROWTH APPARATUS 有权
标题翻译： SUSCEPTOR和VAPOR相增长装置
公开(公告)号：US20140007815A1
公开(公告)日：2014-01-09
申请号：US13932346
申请日：2013-07-01
申请人： TN EMC LTD. , TAIYO NIPPON SANSO CORPORATION
发明人： Akira YAMAGUCHI , Kosuke UCHIYAMA
IPC分类号： C30B25/12
CPC分类号： C30B25/12 , C23C14/50 , C23C14/505 , C23C16/458 , C23C16/4583 , C23C16/4584
摘要： The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, andthe susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.
摘要翻译：本发明提供了一种基座，其可转动地设置在腔室中并且具有多个基板安装部分，并且其上沉积薄膜的基板可旋转地安装在基板安装部分上，并且基座具有盘形，其中在基座的内周面设置有开口部，插入有用于使基座转动的旋转轴的基座，并且基座具有在所述开口的外周和/或周边沿径向延伸的多个切口。

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